Inventor · disambiguated record
Kazuyoshi Ueno
Also filed as: UENO KAZUYOSHI
34 granted patents·11 pending applications·635 citations·filing 1988–2023
97Inventor score
Top patents by PatentIndex Score
45 records- 0191US6391168B1Plating apparatus utilizing an auxiliary electrodeNEC CORP·Filed 2000·Granted May 21, 2002·29 cites·5 claims
- 0291US5696017AMethod of fabricating a semiconductor device with a capacitor structure having increased capacitanceNEC CORP·Filed 1994·Granted Dec 9, 1997·85 cites·7 claims
- 0390US7259095B2Semiconductor device and manufacturing process therefor as well as plating solutionNEC ELECTRONICS CORP·Filed 2005·Granted Aug 21, 2007·12 cites·16 claims
- 0489US6143658AMultilevel wiring structure and method of fabricating a multilevel wiring structureLUCENT TECHNOLOGIES INC·Filed 1999·Granted Nov 7, 2000·102 cites·6 claims
- 0587US7479700B2Semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thickness formed thereon, and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Jan 20, 2009·10 cites·10 claims
- 0685US6221765B1Method for manufacturing a semiconductor deviceNEC CORP·Filed 1999·Granted Apr 24, 2001·56 cites·11 claims
- 0782US5012428AVibration control systemIMV LAB·Filed 1989·Granted Apr 30, 1991·47 cites·11 claims
- 0879US6245676B1Method of electroplating copper interconnectsNEC CORP·Filed 1999·Granted Jun 12, 2001·59 cites·9 claims
- 0978US7138700B2Semiconductor device with guard ring for preventing water from entering circuit region from outsideNEC ELECTRONICS CORP·Filed 2004·Granted Nov 21, 2006·26 cites·18 claims
- 1076US12264998B2Vibration control systemIMV LAB·Filed 2023·Granted Apr 1, 2025·0 cites·10 claims
- 1174US7332813B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2003·Granted Feb 19, 2008·16 cites·12 claims
- 1274US6268090B1Process for manufacturing semiconductor device and exposure maskNEC CORP·Filed 2000·Granted Jul 31, 2001·14 cites·7 claims
- 1372US7741214B2Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereonNEC ELECTRONICS CORP·Filed 2008·Granted Jun 22, 2010·3 cites·3 claims
- 1471US6670639B1Copper interconnectionNEC CORP·Filed 2000·Granted Dec 30, 2003·18 cites·5 claims
- 1569US5227644AHeterojunction field effect transistor with improve carrier density and mobilityNEC CORP·Filed 1991·Granted Jul 13, 1993·29 cites·10 claims
- 1666US7821135B2Semiconductor device with improved stress migration resistance and manufacturing process thereforNEC ELECTRONICS CORP·Filed 2005·Granted Oct 26, 2010·1 cites·16 claims
- 1764US6377900B1Measuring system for transfer function matrix of a system to be controlled in multi-degree of freedom vibration controlIMV LAB·Filed 1999·Granted Apr 23, 2002·27 cites·8 claims
- 1861US7485566B2Method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Feb 3, 2009·2 cites·19 claims
- 1960US11879816B2Vibration control systemIMV LAB·Filed 2019·Granted Jan 23, 2024·0 cites·12 claims
- 2060US6680247B2Manufacturing method of a semiconductor deviceNEC ELECTRONICS CORP·Filed 2001·Granted Jan 20, 2004·9 cites·20 claims
- 2160US5521424ASemiconductor device having a silicon oxide film containing fluorine atomsNEC CORP·Filed 1994·Granted May 28, 1996·29 cites·14 claims
- 2258US6482741B1Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method fabricating the sameNEC CORP·Filed 1999·Granted Nov 19, 2002·18 cites·8 claims
- 2356US7563696B2Semiconductor device manufacturing apparatus and semiconductor device manufacturing methodNEC ELECTRONICS CORP·Filed 2007·Granted Jul 21, 2009·0 cites·9 claims
- 2455US6472318B2Method of fabricating semiconductor device having trench interconnectionNEC CORP·Filed 2001·Granted Oct 29, 2002·6 cites·14 claims
- 2552US6670270B1Semiconductor device manufacturing apparatus and semiconductor device manufacturing methodNEC ELECTRONICS CORP·Filed 1999·Granted Dec 30, 2003·12 cites·10 claims
- 2652US2009258481A1Semiconductor device manufacturing apparatus and semiconductor device manufacturing methodUENO KAZUYOSHI·Filed 2009·Application pending·0 cites
- 2749US6486559B1Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method of fabricating the sameNEC CORP·Filed 1998·Granted Nov 26, 2002·12 cites·12 claims
- 2848US8784931B2ULSI wiring and method of manufacturing the sameUENO KAZUYOSHI·Filed 2009·Granted Jul 22, 2014·0 cites·16 claims
- 2948US7566973B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Jul 28, 2009·0 cites·20 claims
- 3045US6478935B1Semiconductor device plating apparatusNEC CORP·Filed 1999·Granted Nov 12, 2002·8 cites·2 claims
- 3144US7220318B2Semiconductor device manufacturing apparatus and semiconductor device manufacturing methodNEC ELECTRONICS CORP·Filed 2003·Granted May 22, 2007·0 cites·11 claims
- 3242US2003010632A1Method for manufacturing a semiconductor device and a plating apparatus and a sputtering apparatus thereforNEC CORP·Filed 2002·Application pending·0 cites
- 3342US2003201536A1Semiconductor device and manufacturing process therefor as well as plating solutionNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 3442US2006175708A1Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 3540US2001026906A1Process for manufacturing semiconductor device and exposure maskNEC CORP·Filed 2001·Application pending·0 cites
- 3639US2004126548A1ULSI wiring and method of manufacturing the sameUNIV WASEDA·Filed 2003·Application pending·0 cites
- 3738US2003124263A1ULSI wiring and method of manufacturing the sameNEC CORP·Filed 2002·Application pending·0 cites
- 3838US2003124255A1ULSI wiring and method of manufacturing the sameNEC CORP·Filed 2002·Application pending·0 cites
- 3936US6765294B1Semiconductor device including dual-damascene structure and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2000·Granted Jul 20, 2004·0 cites·32 claims
- 4036US2003008075A1ULSI wiring and method of manufacturing the sameWASEDA UNIVERSITY NEC CORP·Filed 2002·Application pending·0 cites
- 4135US2002177307A1Semiconductor device and a method for forming a via hole in a semiconductor deviceFiled 2000·Application pending·0 cites
- 4232US4980750ASemiconductor crystalNEC CORP·Filed 1988·Granted Dec 25, 1990·3 cites·10 claims
- 4331US8069728B2Apparatus for optimizing system performance and related control methodsGOODFELLOW JOHN·Filed 2008·Granted Dec 6, 2011·0 cites·12 claims
- 4431US5098858AJunction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereofNEC CORP·Filed 1990·Granted Mar 24, 1992·2 cites·12 claims
- 4531US2007245828A1Vibration test method, vibration test apparatus and recording medium storing a vibration test programIMV LAB·Filed 2006·Application pending·0 cites
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