US2003010632A1PendingUtilityA1
Method for manufacturing a semiconductor device and a plating apparatus and a sputtering apparatus therefor
Est. expiryAug 31, 2018(expired)· nominal 20-yr term from priority
Inventors:Kazuyoshi Ueno
H10P 14/46H10W 20/0425H10W 20/0526H10W 20/059H10W 20/056H10W 20/044H10W 20/033H10W 20/043
42
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Claims
Abstract
An apparatus for plating a substrate includes plural plating baths that are each separately provided with (a) an individual temperature adjuster that includes a heater, a cooling jacket, and a temperature controller, or (b) an individual pressure application device for distorting the substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed:
1 . A sputtering apparatus comprising a chamber equipped with an exhaust system; a target placed in a given position in the chamber; an electrode generating sputter discharge for sputtering the target; and a substrate holder for retaining a substrate to be treated facing and parallel to the target, the substrate holder having a means for distorting the substrate.
2 . A sputtering apparatus as claimed in claim 1 , where the means for distorting the substrate to be treated is a pressing means for applying pressure to the substrate on its rear face and the pressing means applies a pressure to the center of the substrate different from that to its side.Join the waitlist — get patent alerts
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