Inventor · disambiguated record
Christy S. Tyberg
Also filed as: TYBERG CHRISTY S · TYBERG CHRISTY SENSENICH
34 granted patents·6 pending applications·440 citations·filing 1999–2014
97Inventor score
Top patents by PatentIndex Score
40 records- 0198US7388273B2Reprogrammable fuse structure and methodIBM·Filed 2005·Granted Jun 17, 2008·73 cites·12 claims
- 0297US7394089B2Heat-shielded low power PCM-based reprogrammable EFUSE deviceIBM·Filed 2006·Granted Jul 1, 2008·76 cites·3 claims
- 0395US7365378B2MOSFET structure with ultra-low K spacerIBM·Filed 2005·Granted Apr 29, 2008·32 cites·19 claims
- 0486US7057287B2Dual damascene integration of ultra low dielectric constant porous materialsIBM·Filed 2003·Granted Jun 6, 2006·34 cites·29 claims
- 0585US8569803B2BEOL compatible FET structrureTYBERG CHRISTY S·Filed 2012·Granted Oct 29, 2013·6 cites·13 claims
- 0684US7407879B2Chemical planarization performance for copper/low-k interconnect structuresIBM·Filed 2006·Granted Aug 5, 2008·10 cites·19 claims
- 0783US7960808B2Reprogrammable fuse structure and methodIBM·Filed 2007·Granted Jun 14, 2011·8 cites·21 claims
- 0883US7338895B2Method for dual damascene integration of ultra low dielectric constant porous materialsIBM·Filed 2006·Granted Mar 4, 2008·9 cites·33 claims
- 0981US7084479B2Line level air gapsIBM·Filed 2003·Granted Aug 1, 2006·27 cites·15 claims
- 1078USRE45781EToughness, adhesion and smooth metal lines of porous low K dielectric interconnect structuresHEDRICK JEFFREY C·Filed 2014·Granted Oct 27, 2015·4 cites·65 claims
- 1176US7737561B2Dual damascene integration of ultra low dielectric constant porous materialsIBM·Filed 2008·Granted Jun 15, 2010·5 cites·25 claims
- 1276US6783862B2Toughness, adhesion and smooth metal lines of porous low k dielectric interconnect structuresIBM·Filed 2002·Granted Aug 31, 2004·12 cites·51 claims
- 1375US8278155B2Reprogrammable fuse structure and methodBURR GEOFFREY W·Filed 2011·Granted Oct 2, 2012·3 cites·20 claims
- 1475US8017522B2Mechanically robust metal/low-κ interconnectsIBM·Filed 2007·Granted Sep 13, 2011·5 cites·15 claims
- 1574US6933586B2Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogensIBM·Filed 2002·Granted Aug 23, 2005·11 cites·25 claims
- 1673US8441042B2BEOL compatible FET structureTYBERG CHRISTY S·Filed 2009·Granted May 14, 2013·4 cites·18 claims
- 1773US7755921B2Method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devicesIBM·Filed 2007·Granted Jul 13, 2010·5 cites·35 claims
- 1873US7396758B2Polycarbosilane buried etch stops in interconnect structuresIBM·Filed 2007·Granted Jul 8, 2008·4 cites·1 claims
- 1973US6537908B2Method for dual-damascence patterning of low-k interconnects using spin-on distributed hardmaskIBM·Filed 2001·Granted Mar 25, 2003·16 cites·27 claims
- 2072US6674168B1Single and multilevel reworkIBM·Filed 2003·Granted Jan 6, 2004·17 cites·20 claims
- 2171US7491965B2Heat-shielded low power PCM-based reprogrammable eFUSE deviceIBM·Filed 2008·Granted Feb 17, 2009·6 cites·17 claims
- 2271US6982227B2Single and multilevel reworkIBM·Filed 2003·Granted Jan 3, 2006·16 cites·6 claims
- 2370US8445377B2Mechanically robust metal/low-k interconnectsLIN QINGHUANG·Filed 2011·Granted May 21, 2013·2 cites·20 claims
- 2467US6638878B2Film planarization for low-k polymers used in semiconductor structuresIBM·Filed 2001·Granted Oct 28, 2003·10 cites·18 claims
- 2564US6724069B2Spin-on cap layer, and semiconductor device containing sameIBM·Filed 2001·Granted Apr 20, 2004·12 cites·22 claims
- 2663US7598169B2Method to remove beol sacrificial materials and chemical residues by irradiationIBM·Filed 2007·Granted Oct 6, 2009·1 cites·32 claims
- 2762US7071539B2Chemical planarization performance for copper/low-k interconnect structuresIBM·Filed 2003·Granted Jul 4, 2006·8 cites·30 claims
- 2861US7187081B2Polycarbosilane buried etch stops in interconnect structuresIBM·Filed 2003·Granted Mar 6, 2007·7 cites·16 claims
- 2960US6844257B2Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogensIBM·Filed 2003·Granted Jan 18, 2005·5 cites·45 claims
- 3055US7879717B2Polycarbosilane buried etch stops in interconnect structuresIBM·Filed 2008·Granted Feb 1, 2011·0 cites·14 claims
- 3155US2015060856A1Beol compatible fet structureIBM·Filed 2013·Application pending·0 cites
- 3254US2009294925A1MECHANICALLY ROBUST METAL/LOW-k INTERCONNECTSIBM·Filed 2009·Application pending·0 cites
- 3349US2008128766A1Mosfet structure with ultra-low k spacerIBM·Filed 2008·Application pending·0 cites
- 3448US6818285B2Composition and method to achieve reduced thermal expansion in polyarylene networksIBM·Filed 2002·Granted Nov 16, 2004·3 cites·16 claims
- 3548US2007194450A1BEOL compatible FET structureTYBERG CHRISTY S·Filed 2006·Application pending·0 cites
- 3648US2006264036A1Line level air gapsIBM·Filed 2006·Application pending·0 cites
- 3747US6090486AFiber materials for manufacturing fiber reinforced phenolic composites and adhesives with nucleophilic initiators positioned on the fiber surfacesVIRGINIA POLYTECHNIC INST & ST·Filed 1999·Granted Jul 18, 2000·8 cites·15 claims
- 3845US7329600B2Low dielectric semiconductor device and process for fabricating the sameIBM·Filed 2004·Granted Feb 12, 2008·1 cites·23 claims
- 3937US2004130027A1Improved formation of porous interconnection layersIBM·Filed 2003·Application pending·0 cites
- 4036US6864180B2Method for reworking low-k polymers used in semiconductor structuresIBM·Filed 2001·Granted Mar 8, 2005·0 cites·14 claims
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