Inventor · disambiguated record
Chung-Hu Ge
Also filed as: GE CHUNG-HU · KE CHUNG-HU
14 granted patents·6 pending applications·435 citations·filing 2002–2011
94Inventor score
Top patents by PatentIndex Score
20 records- 0195US6902965B2Strained silicon structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·85 cites·23 claims
- 0295US6900502B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 31, 2005·120 cites·50 claims
- 0392US7022561B2CMOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 4, 2006·84 cites·30 claims
- 0488US7029994B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 18, 2006·15 cites·24 claims
- 0586US6924181B2Strained silicon layer semiconductor product employing strained insulator layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·38 cites·16 claims
- 0680US8569146B2Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2011·Granted Oct 29, 2013·4 cites·20 claims
- 0780US7183593B2Heterostructure resistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·26 cites·36 claims
- 0876US6974755B2Isolation structure with nitrogen-containing liner and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 13, 2005·19 cites·56 claims
- 0972US7208754B2Strained silicon structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 24, 2007·4 cites·20 claims
- 1068US7342289B2Strained silicon MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 11, 2008·13 cites·41 claims
- 1167US7495267B2Semiconductor structure having a strained region and a method of fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·2 cites·19 claims
- 1267US7045836B2Semiconductor structure having a strained region and a method of fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 16, 2006·10 cites·15 claims
- 1361US7321155B2Offset spacer formation for strained channel CMOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 22, 2008·9 cites·25 claims
- 1455US7453133B2Silicide/semiconductor structure and method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 18, 2008·6 cites·19 claims
- 1551US2007099402A1Method for fabricating reliable semiconductor structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 1649US2007161206A1Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2006·Application pending·0 cites
- 1743US2006138557A1Novel CMOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 1842US2005285140A1Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2004·Application pending·0 cites
- 1936US2005236616A1Reliable semiconductor structure and method for fabricatingTSENG HORNG-HUEI·Filed 2004·Application pending·0 cites
- 2033US2005116360A1Complementary field-effect transistors and methods of manufactureFiled 2004·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →