Inventor · disambiguated record
Ki-Yeon Park
Also filed as: PARK KI-YEON
45 granted patents·17 pending applications·436 citations·filing 1999–2019
98Inventor score
Top patents by PatentIndex Score
62 records- 0196US10096688B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 9, 2018·16 cites·20 claims
- 0294US9859393B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 2, 2018·11 cites·20 claims
- 0394US7646056B2Gate structures of a non-volatile memory device and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 12, 2010·39 cites·10 claims
- 0493US7151039B2Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 19, 2006·84 cites·25 claims
- 0592US10403739B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 3, 2019·13 cites·20 claims
- 0689US9559185B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 31, 2017·6 cites·20 claims
- 0788US9390977B2Method for manufacturing a fin=shaped field effect transistor capable of reducing a threshold voltage variationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 12, 2016·5 cites·20 claims
- 0887US7510931B2Method of fabricating a nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 31, 2009·11 cites·16 claims
- 0986US6897106B2Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 24, 2005·29 cites·12 claims
- 1085US7279392B2Thin film structure, capacitor, and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 9, 2007·6 cites·37 claims
- 1184US6599807B2Method for manufacturing capacitor of semiconductor device having improved leakage current characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 29, 2003·33 cites·17 claims
- 1282US8790986B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 29, 2014·7 cites·16 claims
- 1382US6946342B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·22 cites·41 claims
- 1481US8847669B2Method for controlling temperature of terminal and terminal supporting the samePARK KI YEON·Filed 2012·Granted Sep 30, 2014·11 cites·18 claims
- 1581US8159012B2Semiconductor device including insulating layer of cubic system or tetragonal systemLEE JONG-CHEOL·Filed 2008·Granted Apr 17, 2012·7 cites·8 claims
- 1681US7425493B2Methods of forming dielectric structures and capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 16, 2008·8 cites·37 claims
- 1780US9324781B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 26, 2016·2 cites·20 claims
- 1880US9059331B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 16, 2015·3 cites·15 claims
- 1979US10685957B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·2 cites·12 claims
- 2079US10541127B2Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devicesTAK YONG SUK·Filed 2016·Granted Jan 21, 2020·4 cites·16 claims
- 2179US10460927B2Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 29, 2019·2 cites·18 claims
- 2278US10026736B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·2 cites·14 claims
- 2376US7635633B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 22, 2009·5 cites·10 claims
- 2474US7402491B2Methods of manufacturing a semiconductor device including a dielectric layer including zirconiumSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·4 cites·15 claims
- 2573US9070981B2Multi-layered electromagnetic wave absorber and manufacturing method thereofPARK KI YEON·Filed 2011·Granted Jun 30, 2015·4 cites·11 claims
- 2673US8258064B2Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layerLEE JONG-CHEOL·Filed 2010·Granted Sep 4, 2012·3 cites·22 claims
- 2773US6689696B2Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shapeSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 10, 2004·16 cites·4 claims
- 2872US6448146B1Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 10, 2002·17 cites·16 claims
- 2969US6207489B1Method for manufacturing capacitor of semiconductor memory device having tantalum oxide filmSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 27, 2001·35 cites·21 claims
- 3068US7800162B2Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·4 cites·18 claims
- 3166US7094712B2High performance MIS capacitor with HfO2 dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 22, 2006·10 cites·27 claims
- 3265US6555394B2Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressureSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 29, 2003·8 cites·15 claims
- 3363US7560349B2Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·1 cites·15 claims
- 3462US6720275B2Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 13, 2004·6 cites·10 claims
- 3558US10529555B2Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 7, 2020·0 cites·18 claims
- 3658US7888727B2Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 15, 2011·0 cites·11 claims
- 3756US9685450B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·0 cites·12 claims
- 3856US8361551B2Methods forming high dielectric target layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 29, 2013·0 cites·19 claims
- 3951US8710564B2Semiconductor device including insulating layer of cubic system or tetragonal systemLEE JONG-CHEOL·Filed 2012·Granted Apr 29, 2014·0 cites·9 claims
- 4051US2010072536A1Non-volatile memory device and method of manufacturing the sameHO SE-HOON·Filed 2009·Application pending·0 cites
- 4150US2007259212A1Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer depositionPARK KI-YEON·Filed 2007·Application pending·0 cites
- 4250US2011014770A1Methods of forming a dielectric thin film of a semiconductor device and methods of manufacturing a capacitor having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4349US10797160B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 6, 2020·0 cites·19 claims
- 4449US2006084225A1Apparatus for forming dielectric structures in integrated circuitsPARK IN-SUNG·Filed 2005·Application pending·0 cites
- 4548US9247403B2Method and apparatus for filtering a mobile high-definition link signalSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 26, 2016·0 cites·6 claims
- 4648US2005272272A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4746US7566608B2Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·0 cites·31 claims
- 4846US2005081787A1Apparatus and method for supplying a source, and method of depositing an atomic layer using the sameFiled 2004·Application pending·0 cites
- 4944US8357593B2Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·0 cites·10 claims
- 5044US2005087791A1Capacitor of semiconductor memory device that has composite A12O3/HfO2 dielectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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