Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

1 . A method for forming a dielectric layer, the method comprising: 
 introducing a first reactant into a chamber;    removing the remaining first reactant from the chamber by pumping or purging;    introducing a second reactant into the chamber;    removing the remaining second reactant from the chamber to form a dielectric layer on a semiconductor substrate; and    vacuum annealing the dielectric layer.    
   
   
       2 . The method of  claim 1 , wherein the dielectric layer is a single layer of Y 2 O 3 , Al 2 O 3 , TiO 2 , BaO, SrO, ZrO 2 , Ta 2 O 5 , Mb 2 O 5  or a composite layer of Y 2 O 3 , Al 2 O 3 , TiO 2 , BaO, SrO, ZrO 2 , Ta 2 O 5 , Mb 2 O 5    
   
   
       3 . The method of  claim 1 , wherein the vacuum annealing is performed on the dielectric layer at a temperature of about 200-850° C. in a chamber, while evacuating the chamber to a high vacuum level of about 1×10 −8 −1 torr.  
   
   
       4 . A method for forming a dielectric layer, the method comprising: 
 (a) introducing a first reactant into a chamber;    (b) removing the remaining first reactant from the chamber by pumping or purging;    (c) introducing a second reactant into the chamber;    (d) removing the remaining second reactant from the chamber to form a dielectric layer on a semiconductor substrate;    (e) repeating said steps (a) through (d); and    (f) vacuum annealing the dielectric layer.    
   
   
       5 . A method for forming a dielectric layer, the method comprising: 
 (a) introducing a first reactant into a chamber;    (b) removing the remaining first reactant from the chamber by pumping or purging;    (c) introducing a second reactant into the chamber;    (d) removing the remaining second reactant from the chamber to form a dielectric layer on a semiconductor substrate;    (e) vacuum annealing the dielectric layer; and    (f) repeating said steps (a) through (d).