Inventor · disambiguated record
Choong-Rae Cho
Also filed as: CHO CHOONG-RAE
22 granted patents·10 pending applications·408 citations·filing 2005–2019
95Inventor score
Top patents by PatentIndex Score
32 records- 0198US8043926B2Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·48 cites·10 claims
- 0298US7842991B2Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·99 cites·9 claims
- 0397US7417271B2Electrode structure having at least two oxide layers and non-volatile memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 26, 2008·97 cites·19 claims
- 0495US7491987B2Junction field effect thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·56 cites·15 claims
- 0594US7498600B2Variable resistance random access memory device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·63 cites·18 claims
- 0690US7361554B2Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 22, 2008·15 cites·6 claims
- 0787US9735016B2Semiconductor device, method of fabricating the same, and apparatus used in fabrication thereofCHO CHOONG-RAE·Filed 2015·Granted Aug 15, 2017·4 cites·20 claims
- 0885US7414295B2Transistor and method of operating transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 19, 2008·8 cites·14 claims
- 0983US7256447B2Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 14, 2007·9 cites·37 claims
- 1073US10361208B2Semiconductor device, method of fabricating the same, and apparatus used in fabrication thereofCHO CHOONG RAE·Filed 2017·Granted Jul 23, 2019·1 cites·8 claims
- 1164US8624331B2Non-volatile memory devices, methods of manufacturing and methods of operating the sameKIM DEOK-KEE·Filed 2010·Granted Jan 7, 2014·1 cites·20 claims
- 1264US8125021B2Non-volatile memory devices including variable resistance materialCHO CHOONG-RAE·Filed 2007·Granted Feb 28, 2012·3 cites·5 claims
- 1364US7638361B2Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 29, 2009·1 cites·10 claims
- 1460US8525142B2Non-volatile variable resistance memory device and method of fabricating the sameBOURIM EL MOSTAFA·Filed 2007·Granted Sep 3, 2013·3 cites·12 claims
- 1559US2007194367A1Storage node, nonvolatile memory device, methods of fabricating the same and method of operating the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1659US2019244961A1Semiconductor device, method of fabricating the same, and apparatus used in fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 1755US8759936B2Electronic devices and thermal image sensors that utilize embedded quantum dotsCHO CHOONG RAE·Filed 2011·Granted Jun 24, 2014·0 cites·19 claims
- 1855US2006197082A1Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1951US7859035B2Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 28, 2010·0 cites·15 claims
- 2051US7439566B2Semiconductor memory device having metal-insulator transition film resistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·0 cites·17 claims
- 2149US2008316807A1Semiconductor memory device having metal-insulator transition film resistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2248US2007138940A1Surface electron emission device and display device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2348US2008038846A1Method of fabricating a capacitor of a memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2447US7250649B2Capacitor of a memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 31, 2007·0 cites·6 claims
- 2546US8455854B2Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the sameCHO CHOONG-RAE·Filed 2007·Granted Jun 4, 2013·0 cites·10 claims
- 2646US2015037030A1Optical Switching Devices Including Phase Transition MaterialsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2745US9685527B2Methods of forming metal silicide layers including dopant segregationSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·0 cites·17 claims
- 2842US2014299889A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2939US2006255392A1Transistor including metal-insulator transition material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3038US2005161726A1Capacitor of a semiconductor device, memory device including the same and method of munufacturing the sameFiled 2005·Application pending·0 cites
- 3137US9451736B2High load and high precision polygonal guideJIN MOON-YOUNG·Filed 2012·Granted Sep 20, 2016·0 cites·4 claims
- 3236US8796819B2Non-volatile memory device including a variable resistance materialLEE EUN-HONG·Filed 2007·Granted Aug 5, 2014·0 cites·13 claims
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