Semiconductor memory device having metal-insulator transition film resistor

Abstract

A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.

1 - 17 . (canceled) 
   
   
       18 . A method of operating a semiconductor memory device comprising:
 applying a first voltage to a metal-insulator transition film of the semiconductor memory device, such that the metal-insulator transition film acts as a conductor when the semiconductor memory device is in an operating state; and   applying a second voltage to the metal-insulator transition film of the semiconductor memory device, such that the metal-insulator transition film acts as an insulator when the semiconductor memory device is in a stand-by state.