Inventor · disambiguated record
Heike Berthold
Also filed as: BERTHOLD HEIKE
7 granted patents·2 pending applications·18 citations·filing 2008–2013
78Inventor score
Files withFROHBERG KAI3ADVANCED MICRO DEVICES INC2GRIEBENOW UWE2CHUMAKOV DMYTRO1GLOBALFOUNDRIES INC1
Top patents by PatentIndex Score
9 records- 0181US8497583B2Stress reduction in chip packaging by a stress compensation region formed around the chipCHUMAKOV DMYTRO·Filed 2010·Granted Jul 30, 2013·7 cites·13 claims
- 0281US8470661B2High-K gate electrode structure formed after transistor fabrication by using a spacerFROHBERG KAI·Filed 2009·Granted Jun 25, 2013·8 cites·15 claims
- 0370US8440534B2Threshold adjustment for MOS devices by adapting a spacer width prior to implantationGRIEBENOW UWE·Filed 2011·Granted May 14, 2013·2 cites·17 claims
- 0460US8361844B2Method for adjusting the height of a gate electrode in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 29, 2013·1 cites·20 claims
- 0554US2009321850A1Threshold adjustment for MOS devices by adapting a spacer width prior to implantationGRIEBENOW UWE·Filed 2009·Application pending·0 cites
- 0651US8883582B2High-K gate electrode structure formed after transistor fabrication by using a spacerADVANCED MICRO DEVICES INC·Filed 2013·Granted Nov 11, 2014·0 cites·17 claims
- 0747US2009108336A1Method for adjusting the height of a gate electrode in a semiconductor deviceFROHBERG KAI·Filed 2008·Application pending·0 cites
- 0845US8349744B2Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2008·Granted Jan 8, 2013·0 cites·13 claims
- 0943US9006114B2Method for selectively removing a spacer in a dual stress liner approachFROHBERG KAI·Filed 2009·Granted Apr 14, 2015·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →