Inventor · disambiguated record
Abhijit Bandyopadhyay
Also filed as: BANDYOPADHYAY ABHIJIT
29 granted patents·6 pending applications·538 citations·filing 1998–2023
97Inventor score
Files withSANDISK 3D LLC11SANDISK TECHNOLOGIES LLC6BANDYOPADHYAY ABHIJIT4MATRIX SEMICONDUCTOR INC3CHEN XIYING2
Top patents by PatentIndex Score
35 records- 0199US7888205B2Highly scalable thin film transistorSANDISK 3D LLC·Filed 2010·Granted Feb 15, 2011·95 cites·14 claims
- 0298US7054219B1Transistor layout configuration for tight-pitched memory array linesMATRIX SEMICONDUCTOR INC·Filed 2005·Granted May 30, 2006·91 cites·28 claims
- 0397US10354710B2Magnetoelectric random access memory array and methods of operating the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 16, 2019·30 cites·12 claims
- 0497US9859337B2Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 2, 2018·22 cites·28 claims
- 0595US9368207B2Method of operating FET low current 3D re-ramSANDISK 3D LLC·Filed 2015·Granted Jun 14, 2016·20 cites·22 claims
- 0695US8995169B1Method of operating FET low current 3D Re-RAMSANDISK 3D LLC·Filed 2013·Granted Mar 31, 2015·26 cites·20 claims
- 0795US8207064B23D polysilicon diode with low contact resistance and method for forming sameBANDYOPADHYAY ABHIJIT·Filed 2009·Granted Jun 26, 2012·85 cites·15 claims
- 0894US8520425B2Resistive random access memory with low current operationXIAO LI·Filed 2012·Granted Aug 27, 2013·40 cites·19 claims
- 0992US8450181B2In-situ passivation methods to improve performance of polysilicon diodeCHEN XIYING·Filed 2010·Granted May 28, 2013·21 cites·17 claims
- 1091US8289749B2Soft forming reversible resistivity-switching element for bipolar switchingCHEN XIYING·Filed 2009·Granted Oct 16, 2012·29 cites·30 claims
- 1189US10032908B1Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 24, 2018·7 cites·26 claims
- 1289US9472301B2Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the sameSANDISK 3D LLC·Filed 2015·Granted Oct 18, 2016·5 cites·16 claims
- 1387US10714534B1Three terminal isolation elements and methodsSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 14, 2020·4 cites·19 claims
- 1486US8520424B2Composition of memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted Aug 27, 2013·7 cites·26 claims
- 1583US10734073B1Three terminal isolation elements and methodsSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 4, 2020·5 cites·19 claims
- 1682US8385102B2Alternating bipolar forming voltage for resistivity-switching elementsSANDISK 3D LLC·Filed 2010·Granted Feb 26, 2013·8 cites·24 claims
- 1782US7177227B2Transistor layout configuration for tight-pitched memory array linesSANDISK 3D LLC·Filed 2006·Granted Feb 13, 2007·8 cites·25 claims
- 1879US8410582B23D polysilicon diode with low contact resistance and method for forming sameBANDYOPADHYAY ABHIJIT·Filed 2012·Granted Apr 2, 2013·5 cites·18 claims
- 1978US9704920B2Resistive random access memory containing a steering element and a tunneling dielectric elementSANDISK 3D LLC·Filed 2015·Granted Jul 11, 2017·3 cites·19 claims
- 2077US8866124B2Diodes with native oxide regions for use in memory arrays and methods of forming the sameMAXWELL STEVEN·Filed 2011·Granted Oct 21, 2014·5 cites·28 claims
- 2173US8243509B2Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor materialHERNER S BRAD·Filed 2011·Granted Aug 14, 2012·3 cites·8 claims
- 2271US8624293B2Carbon/tunneling-barrier/carbon diodeBANDYOPADHYAY ABHIJIT·Filed 2009·Granted Jan 7, 2014·4 cites·23 claims
- 2364US8883589B2Counter doping compensation methods to improve diode performanceCOSTA XIYING·Filed 2010·Granted Nov 11, 2014·2 cites·47 claims
- 2463US8848430B2Step soft program for reversible resistivity-switching elementsCOSTA XIYING CHEN·Filed 2010·Granted Sep 30, 2014·4 cites·34 claims
- 2552US2024281876A1System, Method, and Computer Program Product for Scoring Using Separate Predictive ModelsVISA INT SERVICE ASS·Filed 2023·Application pending·0 cites
- 2649US8730720B2Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor materialSANDISK 3D LLC·Filed 2013·Granted May 20, 2014·0 cites·20 claims
- 2748US2014241031A1Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the sameSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 2847US8482973B2Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor materialHERNER S BRAD·Filed 2012·Granted Jul 9, 2013·0 cites·20 claims
- 2946US10374013B2Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 6, 2019·0 cites·18 claims
- 3043US6383855B1High speed, low cost BICMOS process using profile engineeringINST OF MICROELECTRONICS·Filed 1998·Granted May 7, 2002·9 cites·24 claims
- 3140US2013148404A1Antifuse-based memory cells having multiple memory states and methods of forming the sameBANDYOPADHYAY ABHIJIT·Filed 2011·Application pending·0 cites
- 3240US2005226067A1Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor materialMATRIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 3339US2007007577A1Integrated circuit embodying a non-volatile memory cellMATRIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 3436US9472758B2High endurance non-volatile storageSANDISK 3D LLC·Filed 2014·Granted Oct 18, 2016·0 cites·18 claims
- 3536US2015070965A1FET LOW CURRENT 3D ReRAM NON-VOLATILE STORAGESANDISK 3D LLC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →