Inventor · disambiguated record
Shyam Ramalingam
Also filed as: RAMALINGAM SHYAM
11 granted patents·2 pending applications·26 citations·filing 2004–2020
87Inventor score
Top patents by PatentIndex Score
13 records- 0189US9263459B1Capping poly channel pillars in stacked circuitsLI HONGQI·Filed 2014·Granted Feb 16, 2016·11 cites·18 claims
- 0284US9754825B2Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methodsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 5, 2017·3 cites·19 claims
- 0384US9099442B2Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 4, 2015·4 cites·21 claims
- 0479US9577192B2Method for forming a metal cap in a semiconductor memory deviceSONY CORP·Filed 2014·Granted Feb 21, 2017·3 cites·20 claims
- 0576US9911643B2Semiconductor constructions and methods of forming intersecting lines of materialMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 6, 2018·2 cites·13 claims
- 0675US10546777B2Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 28, 2020·1 cites·25 claims
- 0775US9922875B2Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 20, 2018·1 cites·27 claims
- 0871US11011420B2Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted May 18, 2021·0 cites·22 claims
- 0960US10847442B2Interconnect assemblies with through-silicon vias and stress-relief featuresMICRON TECHNOLOGY INC·Filed 2014·Granted Nov 24, 2020·1 cites·17 claims
- 1053US9391001B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 12, 2016·0 cites·16 claims
- 1149US2017133585A1Method for forming a metal cap in a semiconductor memory deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Application pending·0 cites
- 1248US10319678B2Capping poly channel pillars in stacked circuitsINTEL CORP·Filed 2015·Granted Jun 11, 2019·0 cites·18 claims
- 1336US2005153563A1Selective etch of films with high dielectric constantLAM RES CORP·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →