Method for forming a metal cap in a semiconductor memory device

Abstract

Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap above a recessed cell structure in order to prevent degradation of components inside the cell structure in oxidative or corrosive environments.

What is claimed is: 
     
         1 . A device comprising:
 a recessed cell structure formed in a trench atop a substrate, the trench created by a damascene process; and   a cap formed above the recessed cell structure to protect the recessed cell structure from degradation.   
     
     
         2 . The device of  claim 1  wherein the cap is formed by a selective deposition. 
     
     
         3 . The device of  claim 2  forming a memory cell, wherein the memory cell is a resistive RAM (ReRAM) cell, conductive-bridge RAM (CB-RAM) cell, or a phase change memory (PCRAM) cell. 
     
     
         4 . The device of  claim 2  wherein the cap is a dielectric cap or a metal cap. 
     
     
         5 . The device of  claim 4 , wherein the metal cap is formed using one of W, TiN, TaN, Ta or TiW, and the dielectric cap is formed using one of SiN, SiOx, or a high-k dielectric.