Inventor · disambiguated record
Jae-Hyun Yeo
Also filed as: CHOI HOON-SANG · YEO JAE H · YEO JAE-HYUN
31 granted patents·12 pending applications·936 citations·filing 1989–2016
97Inventor score
Top patents by PatentIndex Score
43 records- 0198US7482677B2Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·88 cites·7 claims
- 0298US7201943B2Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the materialSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 10, 2007·506 cites·33 claims
- 0393US7151039B2Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 19, 2006·84 cites·25 claims
- 0489US7087482B2Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 8, 2006·44 cites·10 claims
- 0587US6734480B2Semiconductor capacitors having tantalum oxide layersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 11, 2004·34 cites·11 claims
- 0686US7273822B2Methods and apparatus for forming thin films for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·9 cites·27 claims
- 0786US6897106B2Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 24, 2005·29 cites·12 claims
- 0882US7514315B2Methods of forming capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·8 cites·8 claims
- 0982US6946342B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·22 cites·41 claims
- 1082US4971962ACephalosporin compoundsLUCKY LTD·Filed 1989·Granted Nov 20, 1990·18 cites·8 claims
- 1181US10049943B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 14, 2018·4 cites·19 claims
- 1281US7759718B2Method manufacturing capacitor dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·7 cites·1 claims
- 1379US7425514B2Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 16, 2008·5 cites·18 claims
- 1476US7838438B2Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 23, 2010·5 cites·16 claims
- 1576US6884675B2Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 26, 2005·15 cites·23 claims
- 1674US7791125B2Semiconductor devices having dielectric layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·4 cites·7 claims
- 1771US7485585B2Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·3 cites·17 claims
- 1866US7094712B2High performance MIS capacitor with HfO2 dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 22, 2006·10 cites·27 claims
- 1964US7442981B2Capacitor of semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·4 cites·23 claims
- 2056US8399364B2Methods of fabricating semiconductor devices including multilayer dielectric layersKIM KIL-CHUL·Filed 2011·Granted Mar 19, 2013·2 cites·11 claims
- 2154US6919243B2Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 19, 2005·4 cites·21 claims
- 2254US5541175ACephalosporin antibioticsLUCKY LTD·Filed 1994·Granted Jul 30, 1996·11 cites·4 claims
- 2352US2008029031A1Methods and apparatus for forming thin films for semiconductor devicesYEO JAE-HYUN·Filed 2007·Application pending·0 cites
- 2450US7118975B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 10, 2006·4 cites·16 claims
- 2550US2007259212A1Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer depositionPARK KI-YEON·Filed 2007·Application pending·0 cites
- 2650US2009195962A1Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2749US2006084225A1Apparatus for forming dielectric structures in integrated circuitsPARK IN-SUNG·Filed 2005·Application pending·0 cites
- 2848US2009258470A1Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition ProcessSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2948US2005272272A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3047US5202315ACephalosporin compoundsLUCKY LTD·Filed 1990·Granted Apr 13, 1993·3 cites·58 claims
- 3146US7648874B2Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 19, 2010·0 cites·30 claims
- 3244US5142041ACephalosporin intermediatesLUCKY LTD·Filed 1991·Granted Aug 25, 1992·2 cites·4 claims
- 3344US2005087791A1Capacitor of semiconductor memory device that has composite A12O3/HfO2 dielectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3444US2007098892A1Method of forming a layer and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3543US2005051828A1Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer depositionFiled 2004·Application pending·0 cites
- 3643US2004166628A1Methods and apparatus for forming dielectric structures in integrated circuitsPARK IN-SUNG·Filed 2004·Application pending·0 cites
- 3743US2007032013A1Methods of forming a metal oxide layer including zirconium oxide and methods of forming a capacitor for semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3841US5605895ACephalosporin antibiotics and processes for preparation thereofLUCKY LTD·Filed 1994·Granted Feb 25, 1997·6 cites·3 claims
- 3941US5292733ACephalosporin compoundsLUCKY LTD·Filed 1992·Granted Mar 8, 1994·4 cites·5 claims
- 4039US2005000426A1Methods and apparatus for depositing a thin film on a substrateFiled 2003·Application pending·0 cites
- 4138US5462935ACephalosporin compoundsLUCKY LTD·Filed 1993·Granted Oct 31, 1995·1 cites·11 claims
- 4227US5571804ACephalosporin antibioticsLUCKY LTD·Filed 1994·Granted Nov 5, 1996·0 cites·5 claims
- 4327US5416081ACephalosporin compoundsLUCKY LTD·Filed 1993·Granted May 16, 1995·0 cites·3 claims
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