Methods and apparatus for forming thin films for semiconductor devices

Abstract

Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically absorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically absorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically absorb the second reactant onto the substrate.

1 . An apparatus for filming a thin film for a semiconductor device, comprising: 
 a chamber into which a substrate is loaded;    a first reactant supply unit for supplying a first reactant to the chamber;    a first gas line for connecting between the chamber and the first reactant supply unit;    a second reactant supply unit for supplying a second reactant to the chamber;    a second gas line for connecting between the chamber and the second reactant supply unit;    a gas supply unit for supplying a process gas to the chamber, the first reactant supply unit, and the second reactant supply unit;    a third gas line for connecting between the first reactant supply unit and the gas supply unit, the third gas line including a heating means for heating the process gas;    a fourth gas line for connecting between the second reactant supply unit and the gas supply unit; and    a fifth gas line for connecting between the chamber and the gas supply unit.    
   
   
       2 . The apparatus according to  claim 1 , wherein the fourth gas line comprises a heating means for heating the process gas.  
   
   
       3 . The apparatus according to  claim 1 , wherein the fifth gas line comprises a heating means for heating the process gas.  
   
   
       4 . The apparatus according to  claim 1 , wherein the heating means is a sheath heater, a tubular heater, a cartridge heater, a coil heater, a band heater, a jacket heater, or a ribbon heater.  
   
   
       5 . The apparatus according to  claim 2 , wherein the heating means is a sheath heater, a tubular heater, a cartridge heater, a coil heater, a band heater, a jacket heater, or a ribbon heater.  
   
   
       6 . The apparatus according to  claim 3 , wherein the heating means is a sheath heater, a tubular heater, a cartridge heater, a coil heater, a band heater, a jacket heater, or a ribbon heater.  
   
   
       7 . The apparatus according to  claim 1 , wherein the third gas line is formed in a coil shape.  
   
   
       8 . The apparatus according to  claim 2 , wherein the gas line is formed in a coil shape.  
   
   
       9 . The apparatus according to  claim 3 , wherein the gas line is formed in a coil shape.  
   
   
       10 . The apparatus according to  claim 1 , wherein each of the gas lines comprises control valves for controlling the gas lines.  
   
   
       11 . The apparatus according to  claim 1 , further comprising: 
 a pump for performing a pumping operation to remove residues in the chamber.    
   
   
       12 . An apparatus for forming a thin film for a semiconductor device on a substrate by means of chemical displacement by chemically adsorbing first and second bubbled reactants in sequence, the apparatus comprising: 
 a heating means for preheating a process gas that is supplied to bubble the first reactant.    
   
   
       13 . The apparatus according to  claim 12 , further comprising: 
 a heating means for preheating a purging gas, the purging gas being supplied to perform a purging process of removing remaining residues after the first reactant or the second reactant is chemically adsorbed.    
   
   
       14 . The apparatus according to  claim 12 , further comprising: 
 a heating means for preheating a process gas that is supplied to bubble the second reactant.