Inventor · disambiguated record
David C. Sheridan
Also filed as: SHERIDAN DAVID · SHERIDAN DAVID C · SHERIDAN DAVID CHARLES
35 granted patents·4 pending applications·226 citations·filing 2001–2015
97Inventor score
Top patents by PatentIndex Score
39 records- 0190US8202772B2Vertical junction field effect transistors having sloped sidewalls and methods of makingSHERIDAN DAVID C·Filed 2010·Granted Jun 19, 2012·9 cites·18 claims
- 0290US7977713B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Jul 12, 2011·16 cites·24 claims
- 0389US8466017B2Methods of making semiconductor devices having implanted sidewalls and devices made therebySHERIDAN DAVID C·Filed 2010·Granted Jun 18, 2013·11 cites·20 claims
- 0489US6521506B1Varactors for CMOS and BiCMOS technologiesIBM·Filed 2001·Granted Feb 18, 2003·41 cites·11 claims
- 0586US9536803B2Integrated power module with improved isolation and thermal conductivityRF MICRO DEVICES INC·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
- 0686US8058655B2Vertical junction field effect transistors having sloped sidewalls and methods of makingSHERIDAN DAVID C·Filed 2009·Granted Nov 15, 2011·9 cites·20 claims
- 0784US8105924B2Deep trench based far subcollector reachthroughORNER BRADLEY A·Filed 2010·Granted Jan 31, 2012·8 cites·11 claims
- 0883US8288244B2Lateral passive device having dual annular electrodesCOLLINS DAVID S·Filed 2010·Granted Oct 16, 2012·6 cites·4 claims
- 0983US7214627B2Graded junction termination extensions for electronic devicesUNIV AUBURN·Filed 2005·Granted May 8, 2007·10 cites·32 claims
- 1081US7217628B2High performance integrated vertical transistors and method of making the sameIBM·Filed 2005·Granted May 15, 2007·8 cites·12 claims
- 1180US8338265B2Silicided trench contact to buried conductive layerCOOLBAUGH DOUGLAS D·Filed 2008·Granted Dec 25, 2012·7 cites·16 claims
- 1280US7691734B2Deep trench based far subcollector reachthroughIBM·Filed 2007·Granted Apr 6, 2010·8 cites·9 claims
- 1378US7335927B2Lateral silicided diodesIBM·Filed 2006·Granted Feb 26, 2008·6 cites·18 claims
- 1478US7183628B2Structure and method of hyper-abrupt junction varactorsIBM·Filed 2004·Granted Feb 27, 2007·17 cites·13 claims
- 1574US7550787B2Varied impurity profile region formation for varying breakdown voltage of devicesIBM·Filed 2005·Granted Jun 23, 2009·4 cites·6 claims
- 1674US6891251B2Varactors for CMOS and BiCMOS technologiesIBM·Filed 2002·Granted May 10, 2005·16 cites·8 claims
- 1773US7696604B2Silicon germanium heterostructure barrier varactorIBM·Filed 2007·Granted Apr 13, 2010·4 cites·18 claims
- 1873US7135375B2Varactors for CMOS and BiCMOS technologiesIBM·Filed 2005·Granted Nov 14, 2006·4 cites·9 claims
- 1971US8872281B2Silicided trench contact to buried conductive layerCOOLBAUGH DOUGLAS D·Filed 2012·Granted Oct 28, 2014·3 cites·20 claims
- 2066US8015538B2Design structure with a deep sub-collector, a reach-through structure and trench isolationIBM·Filed 2007·Granted Sep 6, 2011·3 cites·20 claims
- 2166US7700453B2Method for forming hyper-abrupt junction varactorsIBM·Filed 2007·Granted Apr 20, 2010·2 cites·20 claims
- 2265US7994548B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Aug 9, 2011·2 cites·19 claims
- 2362US8163612B2Silicon germanium heterostructure barrier varactorDAHLSTROM ERIK M·Filed 2009·Granted Apr 24, 2012·2 cites·20 claims
- 2462US7709930B2Tuneable semiconductor device with discontinuous portions in the sub-collectorIBM·Filed 2004·Granted May 4, 2010·10 cites·8 claims
- 2562US7253073B2Structure and method for hyper-abrupt junction varactorsIBM·Filed 2004·Granted Aug 7, 2007·7 cites·13 claims
- 2657US7491632B2Buried subcollector for high frequency passive semiconductor devicesIBM·Filed 2005·Granted Feb 17, 2009·1 cites·13 claims
- 2755US8659057B2Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of makingRITENOUR ANDREW·Filed 2011·Granted Feb 25, 2014·1 cites·20 claims
- 2855US7033950B2Graded junction termination extensions for electronic devicesUNIV AUBURN·Filed 2002·Granted Apr 25, 2006·5 cites·11 claims
- 2953US8513675B2Vertical junction field effect transistors having sloped sidewalls and methods of makingSHERIDAN DAVID C·Filed 2012·Granted Aug 20, 2013·0 cites·19 claims
- 3052US8030167B2Varied impurity profile region formation for varying breakdown voltage of devicesIBM·Filed 2007·Granted Oct 4, 2011·0 cites·19 claims
- 3151US7381997B2Lateral silicided diodesIBM·Filed 2007·Granted Jun 3, 2008·0 cites·16 claims
- 3247US2013011979A1Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of makingSS SC IP LLC·Filed 2012·Application pending·0 cites
- 3346US7821097B2Lateral passive device having dual annular electrodesIBM·Filed 2006·Granted Oct 26, 2010·0 cites·4 claims
- 3446US2007001264A1High performance integrated vertical transistors and method of making the sameIBM·Filed 2006·Application pending·0 cites
- 3543US8507335B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSANKIN IGOR·Filed 2011·Granted Aug 13, 2013·0 cites·18 claims
- 3643US2008087978A1Semiconductor structure and method of manufactureCOOLBAUGH DOUGLAS D·Filed 2006·Application pending·0 cites
- 3742US9673312B2Power semiconductor device with over-current protectionRF MICRO DEVICES INC·Filed 2015·Granted Jun 6, 2017·0 cites·15 claims
- 3841US2006234484A1Method and structure for ion implantation by ion scatteringIBM·Filed 2005·Application pending·0 cites
- 3932US8884270B2Vertical junction field effect transistors with improved thermal characteristics and methods of makingCASADY JANNA·Filed 2012·Granted Nov 11, 2014·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →