Inventor · disambiguated record
Husam N. Al-Shareef
Also filed as: AL-SHAREEF HUSAM · AL-SHAREEF HUSAM N · AL-SHAREEF HUSAM NIMAN
42 granted patents·4 pending applications·1,030 citations·filing 1994–2006
98Inventor score
Files withMICRON TECHNOLOGY INC41AGARWAL VISHNU K1AL-SHAREEF HUSAM N1GEALY F D1SUPERCONDUCTING CORE TECHNOLOG1
Top patents by PatentIndex Score
46 records- 0196US6096127ATuneable dielectric films having low electrical lossesSUPERCONDUCTING CORE TECHNOLOG·Filed 1997·Granted Aug 1, 2000·156 cites·19 claims
- 0294US5555486AHybrid metal/metal oxide electrodes for ferroelectric capacitorsUNIV NORTH CAROLINA STATE·Filed 1994·Granted Sep 10, 1996·204 cites·46 claims
- 0391US6872639B2Fabrication of semiconductor devices with transition metal boride films as diffusion barriersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 29, 2005·43 cites·17 claims
- 0486US6281543B1Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the sameMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 28, 2001·47 cites·14 claims
- 0585US6351005B1Integrated capacitor incorporating high K dielectricMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 26, 2002·31 cites·19 claims
- 0684US6191443B1Capacitors, methods of forming capacitors, and DRAM memory cellsMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 20, 2001·52 cites·7 claims
- 0783US6864527B2Capacitor having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 8, 2005·18 cites·63 claims
- 0883US6423649B2Method and apparatus for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·17 cites·71 claims
- 0982US6635547B2DRAM capacitor formulation using a double-sided electrodeMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 21, 2003·21 cites·20 claims
- 1082US6458645B2Capacitor having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 1, 2002·41 cites·23 claims
- 1182US6162744AMethod of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layersMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 19, 2000·62 cites·41 claims
- 1282US6124164AMethod of making integrated capacitor incorporating high K dielectricMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 26, 2000·42 cites·20 claims
- 1380US7038265B2Capacitor having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2005·Granted May 2, 2006·4 cites·55 claims
- 1479US6451661B1DRAM capacitor formulation using a double-sided electrodeMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 17, 2002·41 cites·9 claims
- 1579US6316800B1Boride electrodes and barriers for cell dielectricsMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 13, 2001·17 cites·15 claims
- 1677US6596651B2Method for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·11 cites·71 claims
- 1775US6400552B2Capacitor with conductively doped Si-Ge alloy electrodeMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 4, 2002·13 cites·24 claims
- 1872US7206215B2Antifuse having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 17, 2007·9 cites·29 claims
- 1972US6673689B2Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the sameMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 6, 2004·12 cites·38 claims
- 2072US6613654B1Fabrication of semiconductor devices with transition metal boride films as diffusion barriersMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 2, 2003·11 cites·10 claims
- 2171US6773981B1Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 10, 2004·10 cites·25 claims
- 2271US6255186B1Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefromMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 3, 2001·27 cites·6 claims
- 2369US6518121B2Boride electrodes and barriers for cell dielectricsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 11, 2003·9 cites·8 claims
- 2467US6291364B1Method and apparatus for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 18, 2001·18 cites·71 claims
- 2564US6720607B1Method for improving the resistance degradation of thin film capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 13, 2004·7 cites·25 claims
- 2659US6111285ABoride electrodes and barriers for cell dielectricsMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 29, 2000·17 cites·47 claims
- 2757US6943392B2Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygenMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 13, 2005·16 cites·34 claims
- 2856US6082375AMethod of processing internal surfaces of a chemical vapor deposition reactorMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 4, 2000·17 cites·26 claims
- 2955US7410911B2Method for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 12, 2008·0 cites·20 claims
- 3054US6737696B1DRAM capacitor formulation using a double-sided electrodeMICRON TECHNOLOGY INC·Filed 1998·Granted May 18, 2004·14 cites·33 claims
- 3154US6399459B2Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the sameMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 4, 2002·4 cites·9 claims
- 3254US2006199311A1Antifuse having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3352US7176079B2Method of fabricating a semiconductor device with a wet oxidation with steam processMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 13, 2007·2 cites·5 claims
- 3451US2005279283A1Method for stabilizing high pressure oxidation of a semiconductor deviceGEALY F D·Filed 2005·Application pending·0 cites
- 3550US6258655B1Method for improving the resistance degradation of thin film capacitorsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 10, 2001·12 cites·46 claims
- 3650US2006006450A1Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygenAL-SHAREEF HUSAM N·Filed 2005·Application pending·0 cites
- 3749US6610211B1Method of processing internal surfaces of a chemical vapor deposition reactorMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 26, 2003·7 cites·7 claims
- 3846US7279435B2Apparatus for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 9, 2007·0 cites·70 claims
- 3946US2007001206A1Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygenAGARWAL VISHNU K·Filed 2006·Application pending·0 cites
- 4045US6614082B1Fabrication of semiconductor devices with transition metal boride films as diffusion barriersMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 2, 2003·8 cites·21 claims
- 4145US6239459B1Capacitors, methods of forming capacitors and integrated circuitryMICRON TECHNOLOGY INC·Filed 1999·Granted May 29, 2001·8 cites·30 claims
- 4244US6955996B2Method for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 18, 2005·0 cites·20 claims
- 4344US6949477B2Method of fabricating a capacitive element for a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 27, 2005·0 cites·14 claims
- 4443US7064052B2Method of processing a transistor gate dielectric film with stemMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 20, 2006·0 cites·6 claims
- 4542US7282457B2Apparatus for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 16, 2007·0 cites·62 claims
- 4633US7022623B2Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam processMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 4, 2006·2 cites·8 claims
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