US2005279283A1PendingUtilityA1

Method for stabilizing high pressure oxidation of a semiconductor device

51
Individually held — no corporate assignee on recordPriority: Aug 31, 1999Filed: Aug 23, 2005Published: Dec 22, 2005
Est. expiryAug 31, 2019(expired)· nominal 20-yr term from priority
Inventors:F. GealyDave ChapekScott DeboerHusam N. Al-ShareefRandhir P. S. Thakur
H10P 14/6322H10P 14/6309H10P 14/69398H10P 14/69393H10P 14/6334H10D 64/01344Y10S438/903C30B 33/005H10D 64/693
51
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Claims

Abstract

A method and apparatus for preventing N 2 O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N 2 O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N 2 O and a temperature range of 600° to 750° C., which are the conditions that lead to the N 2 O going super critical. By preventing the N 2 O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Claims

exact text as granted — not AI-modified
1 . A furnace comprising: 
 a furnace tube having a length and an interior surface for processing semiconductor material therein when operating in a predetermined range of temperature and a range of pressure;    a gas feed coupled to the furnace tube for introducing a gas into the furnace tube; and    a catalyst located within said furnace tube for contacting the gas introduced into the furnace tube.    
   
   
       2 . The furnace according to  claim 1 , wherein the predetermined range of temperature includes 600° C. to 750° C.  
   
   
       3 . The furnace according to  claim 1 , wherein the catalyst matrix comprises: 
 a tube liner placed along a portion of a length of the interior surface of the furnace tube, the tube liner including a plurality of openings therein.    
   
   
       4 . The furnace according to  claim 3 , wherein the tube liner comprises: 
 a base material having a plurality of openings formed therein; and    a catalyst material covering a portion of the base material.    
   
   
       5 . The furnace according to  claim 4 , wherein the base material comprises stainless steel.  
   
   
       6 . The furnace according to  claim 5 , wherein the catalyst material is selected from a group consisting of lead, platinum, iridium or palladium.  
   
   
       7 . The furnace according to  claim 5 , wherein the catalyst material is selected from a group consisting of rhodium, nickel, or silver.  
   
   
       8 . The furnace according to  claim 1 , wherein the predetermined range of pressure includes a range of five atmospheres to twenty-five atmospheres.  
   
   
       9 . The furnace according to  claim 1 , wherein the predetermined range of pressure is at least five atmospheres.  
   
   
       10 . The furnace according to  claim 1 , further comprising a gas outlet connected to the furnace tube.  
   
   
       11 . A furnace comprising: 
 a furnace tube having a length and an interior surface for processing semiconductor material therein in a predetermined range of temperature and a predetermined range of pressure;    a gas feed coupled to the furnace tube for introducing a gas into the furnace tube;    a catalyst matrix located within the furnace tube for contacting the gas introduced into the furnace tube; and    a gas outlet coupled to the furnace tube for removing gas therefrom.    
   
   
       12 . The furnace according to  claim 11 , wherein the predetermined range of temperature includes 600° C. to 750° C.  
   
   
       13 . The furnace according to  claim 11 , wherein the catalyst matrix comprises: 
 a tube liner placed along a portion of a length of the interior surface of the furnace tube, the tube liner including a plurality of openings therein.    
   
   
       14 . The furnace according to  claim 13 , wherein the tube liner comprises: 
 a base material having a plurality of openings formed therein; and    a catalyst material covering a portion of the base material.    
   
   
       15 . The furnace according to  claim 14 , wherein the base material is formed in a honeycomb configuration.  
   
   
       16 . The furnace according to  claim 14 , wherein the base material is formed in a hexagonal configuration.  
   
   
       17 . The furnace according to  claim 14 , wherein the base material comprises stainless steel.  
   
   
       18 . The furnace according to  claim 14 , wherein the base material comprises a structural ceramic.  
   
   
       19 . The furnace according to  claim 14 , wherein the catalyst material is selected from a group consisting of lead, platinum, iridium or palladium.  
   
   
       20 . The furnace according to  claim 14 , wherein the catalyst material is selected from a group consisting of rhodium, nickel, or silver.  
   
   
       21 . The furnace according to  claim 11 , wherein the predetermined range of pressure includes a range of five atmospheres to twenty-five atmospheres.  
   
   
       22 . The furnace according to  claim 11 , wherein the predetermined range of pressure is at least five atmospheres.  
   
   
       23 . A furnace comprising: 
 a furnace tube having a length and an interior surface for processing semiconductor material therein in a predetermined range of temperature and a predetermined range of pressure;    a gas feed coupled to the furnace tube for introducing N 2 O gas into the furnace tube;    a catalyst matrix located within the furnace tube for contacting the N 2 O gas introduced into the furnace tube; and    a gas outlet coupled to the furnace tube for removing the N 2 O gas therefrom.    
   
   
       24 . The furnace according to  claim 23 , wherein the predetermined range of temperature includes 600° C. to 750° C.  
   
   
       25 . The furnace according to  claim 23 , wherein the catalyst matrix comprises: 
 a tube liner placed along a portion of a length of the interior surface of the furnace tube, the tube liner including a plurality of openings therein.    
   
   
       26 . The furnace according to  claim 25 , wherein the tube liner comprises: 
 a base material having a plurality of openings formed therein; and    a catalyst material covering a portion of the base material.    
   
   
       27 . The furnace according to  claim 26 , wherein the base material is formed in a honeycomb configuration.  
   
   
       28 . The furnace according to  claim 26 , wherein the base material is formed in a hexagonal configuration.  
   
   
       29 . The furnace according to  claim 26 , wherein the base material comprises at least one of stainless steel and a structural ceramic.  
   
   
       30 . The furnace according to  claim 26 , wherein the catalyst material is selected from a group consisting of lead, platinum, iridium or palladium.  
   
   
       31 . The furnace according to  claim 26 , wherein the catalyst material is selected from a group consisting of rhodium, nickel, or silver.  
   
   
       32 . The furnace according to  claim 23 , wherein the predetermined range of pressure includes a range of five atmospheres to twenty-five atmospheres.  
   
   
       33 . The furnace according to  claim 23 , wherein the predetermined range of pressure is at least five atmospheres.

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