Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen

Abstract

The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

1 - 31 . (canceled)  
   
   
       32 . A method of forming a capacitor comprising: 
 providing a first electrode over a substrate;    forming a dielectric layer over the first electrode and comprising high k dielectric material, the forming of the dielectric layer comprising: 
 forming a first portion proximate the first electrode;  
 forming a center portion over the first portion; and  
 forming a third portion over the center portion, the center portion comprising a thickness which is substantially the same as a thickness of at least one of the first and third portions, and at least one of the portions comprising a dielectric constant and/or a current leakage potential that is different from at least one of the other two portions; and  
   providing a second electrode over the third portion of the dielectric layer.    
   
   
       33 . The method of  claim 32  wherein the first portion comprises a thickness which is substantially the same as the thickness of the center portion.  
   
   
       34 . The method of  claim 32  wherein the second portion comprises a thickness which is substantially the same as the thickness of the center portion.  
   
   
       35 . The method of  claim 32  wherein the first and second portions comprise respective thicknesses which are substantially the same as the thickness of the center portion.  
   
   
       36 . The method of  claim 32  wherein the center portion comprises a dielectric constant that is greater than respective dielectric constants of the first and third portions.  
   
   
       37 . The method of  claim 32  wherein the center portion comprises a current leakage potential that is less than respective current leakage potentials of the first and third portions.  
   
   
       38 . The method of  claim 32  wherein the first portion comprises a current leakage potential that is substantially the same as a current leakage potential of the third portion.  
   
   
       39 . The method of  claim 32  wherein the capacitor is comprised by a memory cell.  
   
   
       40 . The method of  claim 32  wherein the capacitor is comprised by a memory array.