Inventor · disambiguated record
Veeraraghavan S. Basker
Also filed as: BASKER VEERARAGHAVAN · BASKER VEERARAGHAVAN S
466 granted patents·56 pending applications·2,947 citations·filing 2005–2025
99Inventor score
Top patents by PatentIndex Score
522 records- 0199US9666533B1Airgap formation between source/drain contacts and gatesIBM·Filed 2016·Granted May 30, 2017·54 cites·20 claims
- 0299US9496225B1Recessed metal liner contact with copper fillIBM·Filed 2016·Granted Nov 15, 2016·409 cites·10 claims
- 0399US8679902B1Stacked nanowire field effect transistorIBM·Filed 2012·Granted Mar 25, 2014·70 cites·18 claims
- 0499US7993999B2High-K/metal gate CMOS finFET with improved pFET threshold voltageIBM·Filed 2009·Granted Aug 9, 2011·111 cites·23 claims
- 0598US10832916B1Self-aligned gate isolation with asymmetric cut placementIBM·Filed 2019·Granted Nov 10, 2020·42 cites·25 claims
- 0698US9871116B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 16, 2018·18 cites·19 claims
- 0798US9735246B1Air-gap top spacer and self-aligned metal gate for vertical fetsIBM·Filed 2016·Granted Aug 15, 2017·39 cites·12 claims
- 0898US9711501B1Interlayer viaIBM·Filed 2016·Granted Jul 18, 2017·34 cites·10 claims
- 0998US9691877B2Replacement metal gate structuresIBM·Filed 2016·Granted Jun 27, 2017·17 cites·12 claims
- 1098US9685532B2Replacement metal gate structuresIBM·Filed 2015·Granted Jun 20, 2017·19 cites·17 claims
- 1198US9659942B1Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET)IBM·Filed 2015·Granted May 23, 2017·22 cites·16 claims
- 1298US9653575B1Vertical transistor with a body contact for back-biasingIBM·Filed 2016·Granted May 16, 2017·32 cites·19 claims
- 1398US9608069B1Self aligned epitaxial based punch through controlIBM·Filed 2016·Granted Mar 28, 2017·20 cites·20 claims
- 1498US9576980B1FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structureIBM·Filed 2015·Granted Feb 21, 2017·27 cites·20 claims
- 1598US9564428B1Forming metal-insulator-metal capacitorIBM·Filed 2015·Granted Feb 7, 2017·22 cites·18 claims
- 1698US9559014B1Self-aligned punch through stopper liner for bulk FinFETIBM·Filed 2015·Granted Jan 31, 2017·20 cites·6 claims
- 1798US9543435B1Asymmetric multi-gate finFETIBM·Filed 2015·Granted Jan 10, 2017·23 cites·3 claims
- 1898US9508825B1Method and structure for forming gate contact above active area with trench silicideIBM·Filed 2015·Granted Nov 29, 2016·53 cites·14 claims
- 1998US9425105B1Semiconductor device including self-aligned gate structure and improved gate spacer topographyIBM·Filed 2015·Granted Aug 23, 2016·34 cites·7 claims
- 2098US9390981B1Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicidesGLOBALFOUNDRIES US 2 LLC·Filed 2015·Granted Jul 12, 2016·42 cites·11 claims
- 2198US8951870B2Forming strained and relaxed silicon and silicon germanium fins on the same waferIBM·Filed 2013·Granted Feb 10, 2015·39 cites·10 claims
- 2298US8569152B1Cut-very-last dual-epi flowBASKER VEERARAGHAVAN S·Filed 2012·Granted Oct 29, 2013·65 cites·20 claims
- 2398US8445334B1SOI FinFET with recessed merged Fins and liner for enhanced stress couplingBASKER VEERARAGHAVAN S·Filed 2011·Granted May 21, 2013·41 cites·6 claims
- 2497US11615988B2FinFET devicesTESSERA LLC·Filed 2021·Granted Mar 28, 2023·2 cites·20 claims
- 2597US11348999B2Nanosheet semiconductor devices with sigma shaped inner spacerIBM·Filed 2020·Granted May 31, 2022·4 cites·17 claims
- 2697US10283406B2Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drainsIBM·Filed 2017·Granted May 7, 2019·12 cites·13 claims
- 2797US10236359B2Replacement metal gate structuresIBM·Filed 2018·Granted Mar 19, 2019·8 cites·12 claims
- 2897US10177256B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 8, 2019·9 cites·9 claims
- 2997US10056489B2Replacement metal gate structuresIBM·Filed 2017·Granted Aug 21, 2018·8 cites·10 claims
- 3097US9865739B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 9, 2018·12 cites·13 claims
- 3197US9865703B2High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) processIBM·Filed 2015·Granted Jan 9, 2018·19 cites·7 claims
- 3297US9812567B1Precise control of vertical transistor gate lengthIBM·Filed 2016·Granted Nov 7, 2017·15 cites·14 claims
- 3397US9768077B1Low resistance dual liner contacts for Fin Field-Effect Transistors (FinFETs)IBM·Filed 2016·Granted Sep 19, 2017·21 cites·13 claims
- 3497US9685507B2FinFET devicesIBM·Filed 2015·Granted Jun 20, 2017·15 cites·6 claims
- 3597US9613869B2FinFET devicesIBM·Filed 2016·Granted Apr 4, 2017·13 cites·15 claims
- 3697US9570571B1Gate stack integrated metal resistorsIBM·Filed 2015·Granted Feb 14, 2017·16 cites·18 claims
- 3797US9455317B1Nanowire semiconductor device including lateral-etch barrier regionIBM·Filed 2015·Granted Sep 27, 2016·14 cites·9 claims
- 3897US9379025B1Method of forming source/drain contacts in unmerged FinFETsIBM·Filed 2015·Granted Jun 28, 2016·23 cites·20 claims
- 3997US8815670B2Preventing Fin erosion and limiting EPI overburden in FinFET structures by composite hardmaskIBM·Filed 2013·Granted Aug 26, 2014·29 cites·13 claims
- 4096US11894436B2Gate-all-around monolithic stacked field effect transistors having multiple threshold voltagesIBM·Filed 2021·Granted Feb 6, 2024·3 cites·14 claims
- 4196US9947663B2FinFET CMOS with silicon fin N-channel FET and silicon germanium fin P-channel FETIBM·Filed 2016·Granted Apr 17, 2018·13 cites·16 claims
- 4296US9881926B1Static random access memory (SRAM) density scaling by using middle of line (MOL) flowIBM·Filed 2016·Granted Jan 30, 2018·11 cites·12 claims
- 4396US9812400B1Contact line having insulating spacer therein and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·19 cites·15 claims
- 4496US9806155B1Split fin field effect transistor enabling back bias on fin type field effect transistorsIBM·Filed 2016·Granted Oct 31, 2017·13 cites·15 claims
- 4596US9721885B2Electrical fuse and/or resistor structuresIBM·Filed 2016·Granted Aug 1, 2017·7 cites·14 claims
- 4696US9722043B2Self-aligned trench silicide process for preventing gate contact to silicide shortsIBM·Filed 2015·Granted Aug 1, 2017·17 cites·17 claims
- 4796US9553088B1Forming semiconductor device with close ground rulesIBM·Filed 2015·Granted Jan 24, 2017·14 cites·1 claims
- 4896US9530698B1Method and structure for forming FinFET CMOS with dual doped STI regionsIBM·Filed 2015·Granted Dec 27, 2016·11 cites·15 claims
- 4996US9508818B1Method and structure for forming gate contact above active area with trench silicideIBM·Filed 2015·Granted Nov 29, 2016·16 cites·6 claims
- 5096US9484348B2Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETsIBM·Filed 2015·Granted Nov 1, 2016·12 cites·13 claims
Showing the top 50 of 522 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →