Inventor · disambiguated record
Jinghong Li
Also filed as: LI JINGHONG · LI JINGHONG H · LI JINGHONG H JOHN
25 granted patents·10 pending applications·387 citations·filing 2003–2024
96Inventor score
Top patents by PatentIndex Score
35 records- 0198US7696000B2Low defect Si:C layer with retrograde carbon profileIBM·Filed 2006·Granted Apr 13, 2010·124 cites·16 claims
- 0297US9190471B2Semiconductor structure having a source and a drain with reverse facetsADAM THOMAS N·Filed 2012·Granted Nov 17, 2015·35 cites·11 claims
- 0397US8043920B2finFETS and methods of making sameIBM·Filed 2009·Granted Oct 25, 2011·91 cites·12 claims
- 0495US8946033B2Merged fin finFET with (100) sidewall surfaces and method of making sameADAM THOMAS N·Filed 2012·Granted Feb 3, 2015·21 cites·13 claims
- 0594US7279758B1N-channel MOSFETs comprising dual stressors, and methods for forming the sameIBM·Filed 2006·Granted Oct 9, 2007·24 cites·7 claims
- 0693US8896063B2FinFET devices containing merged epitaxial Fin-containing contact regionsIBM·Filed 2013·Granted Nov 25, 2014·15 cites·16 claims
- 0790US9673296B2Semiconductor structure having a source and a drain with reverse facetsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 6, 2017·5 cites·10 claims
- 0889US8410544B2finFETs and methods of making sameCHAN KEVIN K·Filed 2011·Granted Apr 2, 2013·10 cites·20 claims
- 0987US9391171B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2014·Granted Jul 12, 2016·5 cites·10 claims
- 1087US8035141B2Bi-layer nFET embedded stressor element and integration to enhance drive currentIBM·Filed 2009·Granted Oct 11, 2011·15 cites·24 claims
- 1186US8299535B2Delta monolayer dopants epitaxy for embedded source/drain silicideCHAN KEVIN K·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 1282US9711416B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2016·Granted Jul 18, 2017·2 cites·19 claims
- 1380US9236397B2FinFET device containing a composite spacer structureGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·4 cites·18 claims
- 1480US8900934B2FinFET devices containing merged epitaxial Fin-containing contact regionsIBM·Filed 2013·Granted Dec 2, 2014·4 cites·17 claims
- 1575US9105741B2Method of replacement source/drain for 3D CMOS transistorsCHAN KEVIN K·Filed 2012·Granted Aug 11, 2015·4 cites·13 claims
- 1675US7473608B2N-channel MOSFETs comprising dual stressors, and methods for forming the sameIBM·Filed 2007·Granted Jan 6, 2009·4 cites·18 claims
- 1771US8685845B2Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gasDUBE ABHISHEK·Filed 2010·Granted Apr 1, 2014·3 cites·15 claims
- 1871US8126577B2Monitoring and control of electronic devicesTICKNOR ANTHONY J·Filed 2008·Granted Feb 28, 2012·6 cites·8 claims
- 1969US8666518B2Monitoring and control of electronic devicesTICKNOR ANTHONY J·Filed 2012·Granted Mar 4, 2014·2 cites·21 claims
- 2066US8236660B2Monolayer dopant embedded stressor for advanced CMOSCHAN KEVIN K·Filed 2010·Granted Aug 7, 2012·2 cites·5 claims
- 2164US2024410079A13D structured inorganic nanoscale product and printing method and application thereofUNIV TSINGHUA·Filed 2024·Application pending·0 cites
- 2258US9711417B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2016·Granted Jul 18, 2017·0 cites·19 claims
- 2351US2015102428A1Merged fin finfet with (100) sidewall surfaces and method of making sameIBM·Filed 2014·Application pending·0 cites
- 2450US8853796B2High-K metal gate deviceTEH YOUNG WAY·Filed 2011·Granted Oct 7, 2014·1 cites·26 claims
- 2548US8421191B2Monolayer dopant embedded stressor for advanced CMOSCHAN KEVIN K·Filed 2012·Granted Apr 16, 2013·0 cites·14 claims
- 2648US2010200896A1Embedded stress elements on surface thin direct silicon bond substratesIBM·Filed 2009·Application pending·0 cites
- 2745US10939287B2Method of batch automatic network configuration of WiFi devices, terminal equipment and storage mediumYEALINK XIAMEN NETWORK TECH CO LTD·Filed 2020·Granted Mar 2, 2021·0 cites·14 claims
- 2844US2004009235A1Nanometer grade hydroxyapatite composition for replenishing calciumFiled 2003·Application pending·0 cites
- 2942US8021945B2Bottle-shaped trench capacitor with enhanced capacitanceIBM·Filed 2009·Granted Sep 20, 2011·1 cites·14 claims
- 3042US2015097217A1Semiconductor attenuated finsIBM·Filed 2013·Application pending·0 cites
- 3141US2006220112A1Semiconductor device forming method and structure for retarding dopant-enhanced diffusionIBM·Filed 2005·Application pending·0 cites
- 3240US2013193492A1Silicon carbon film structure and methodADAM THOMAS N·Filed 2012·Application pending·0 cites
- 3339US2012305940A1Defect Free Si:C Epitaxial GrowthADAM THOMAS N·Filed 2011·Application pending·0 cites
- 3437US2006276917A1Monitoring and control of electronic devicesBEAM EXPRESS INC·Filed 2005·Application pending·0 cites
- 3535US2008246056A1SILICIDE FORMATION FOR eSiGe USING SPACER OVERLAPPING eSiGe AND SILICON CHANNEL INTERFACE AND RELATED PFETCHAN VICTOR W C·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →