Inventor · disambiguated record
Denis Shamiryan
Also filed as: SHAMIRYAN DENIS
7 granted patents·7 pending applications·74 citations·filing 2001–2013
82Inventor score
Top patents by PatentIndex Score
14 records- 0186US6662631B2Method and apparatus for characterization of porous filmsIMEC INTER UNI MICRO ELECTR·Filed 2002·Granted Dec 16, 2003·34 cites·10 claims
- 0285US6593251B2Method to produce a porous oxygen-silicon layerIMEC INTER UNI MICRO ELECTR·Filed 2001·Granted Jul 15, 2003·29 cites·16 claims
- 0380US7521369B2Selective removal of rare earth based high-k materials in a semiconductor deviceIMEC INTER UNI MICRO ELECTR·Filed 2007·Granted Apr 21, 2009·7 cites·21 claims
- 0474US7964039B2Cleaning of plasma chamber walls using noble gas cleaning stepIMEC·Filed 2008·Granted Jun 21, 2011·3 cites·9 claims
- 0560US7598184B2Plasma composition for selective high-k etchIMEC·Filed 2006·Granted Oct 6, 2009·1 cites·18 claims
- 0652US7390708B2Patterning of doped poly-silicon gatesIMEC INTER UNI MICRO ELECTR·Filed 2007·Granted Jun 24, 2008·0 cites·15 claims
- 0745US2007099428A1Plasma for patterning advanced gate stacksSHAMIRYAN DENIS·Filed 2006·Application pending·0 cites
- 0843US2006022348A1Method of sealing low-k dielectrics and devices made therebyABELL THOMAS J·Filed 2005·Application pending·0 cites
- 0940US2003181066A1Method to produce a porous oxygen-silicon layerFiled 2003·Application pending·0 cites
- 1038US2005287826A1Method of sealing low-k dielectrics and devices made therebyABELL THOMAS J·Filed 2004·Application pending·0 cites
- 1136US2014273463A1Methods for fabricating integrated circuits that include a sealed sidewall in a porous low-k dielectric layerGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1235US2013177999A1Methods for fabricating integrated circuits including in-line diagnostics performed on low-k dielectric layersSHAMIRYAN DENIS·Filed 2012·Application pending·0 cites
- 1333US2011006406A1Fabrication of porogen residues free and mechanically robust low-k materialsIMEC·Filed 2010·Application pending·0 cites
- 1429US7799664B2Method for selective epitaxial growth of source/drain areasIMEC·Filed 2006·Granted Sep 21, 2010·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →