Inventor · disambiguated record
Jung-Hun Seo
Also filed as: SEO JUNG-HUN
25 granted patents·21 pending applications·64 citations·filing 2003–2022
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15WISCONSIN ALUMNI RES FOUND12SEO JUNG-HUN9FRAUNHOFER USA INC2KIM KI-CHUL1
Top patents by PatentIndex Score
46 records- 0193US10041172B2Gas injection apparatus and thin film deposition equipment including the sameKIM KI CHUL·Filed 2015·Granted Aug 7, 2018·6 cites·12 claims
- 0290US10669631B2Gas injection apparatus and thin film deposition equipment including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·3 cites·10 claims
- 0388US9425351B2Hybrid heterostructure light emitting devicesWISCONSIN ALUMNI RES FOUND·Filed 2014·Granted Aug 23, 2016·8 cites·20 claims
- 0483US9337622B2Compact distributed bragg reflectorsWISCONSIN ALUMNI RES FOUND·Filed 2014·Granted May 10, 2016·5 cites·23 claims
- 0582US8866154B2Lattice mismatched heterojunction structures and devices made therefromWISCONSIN ALUMNI RES FOUND·Filed 2013·Granted Oct 21, 2014·6 cites·22 claims
- 0680US7439192B2Method of forming a layer on a semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·3 cites·11 claims
- 0778US10749062B2Hybrid tandem solar cells with improved tunnel junction structuresWISCONSIN ALUMNI RES FOUND·Filed 2018·Granted Aug 18, 2020·1 cites·9 claims
- 0874US9653640B2Metal-oxide-semiconductor field-effect phototransistors based on single crystalline semiconductor thin filmsWISCONSIN ALUMNI RES FOUND·Filed 2015·Granted May 16, 2017·2 cites·19 claims
- 0974US7902090B2Method of forming a layer on a semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 8, 2011·1 cites·7 claims
- 1072US9006785B2Doped and strained flexible thin-film transistorsWISCONSIN ALUMNI RES FOUND·Filed 2013·Granted Apr 14, 2015·3 cites·8 claims
- 1170US10615574B2Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layersWISCONSIN ALUMNI RES FOUND·Filed 2018·Granted Apr 7, 2020·1 cites·22 claims
- 1270US8366827B2Chamber inserts and apparatuses for processing a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 5, 2013·5 cites·5 claims
- 1368US9899556B2Hybrid tandem solar cells with improved tunnel junction structuresWISCONSIN ALUMNI RES FOUND·Filed 2015·Granted Feb 20, 2018·1 cites·16 claims
- 1468US9605359B2Thermal diffusion doping of diamondWISCONSIN ALUMNI RES FOUND·Filed 2014·Granted Mar 28, 2017·1 cites·20 claims
- 1562US7279416B2Methods of forming a conductive structure in an integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 9, 2007·7 cites·38 claims
- 1658US11886122B2Deep etching substrates using a bi-layer etch maskFRAUNHOFER USA INC·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 1757US7384866B2Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·1 cites·6 claims
- 1856US9850594B2Thermal diffusion doping of diamondWISCONSIN ALUMNI RES FOUND·Filed 2016·Granted Dec 26, 2017·0 cites·14 claims
- 1955US9058993B2Methods for making large-area, free-standing metal oxide filmsWISCONSIN ALUMNI RES FOUND·Filed 2013·Granted Jun 16, 2015·0 cites·15 claims
- 2053US6955983B2Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 18, 2005·9 cites·73 claims
- 2152US2024186144A1Methods of forming carbonaceous membrane with free-standing formFRAUNHOFER USA INC·Filed 2022·Application pending·0 cites
- 2251US7547632B2Methods of forming metal layers in the fabrication of semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·0 cites·19 claims
- 2349US8502218B2Large-area, free-standing metal oxide films and transistors made therefromWANG XUDONG·Filed 2010·Granted Aug 6, 2013·0 cites·22 claims
- 2449US2007022953A1Source gas-supplying unit and chemical vapor deposition apparatus having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2547US6951814B2Methods for forming a metal wiring layer on an integrated circuit device at reduced temperaturesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 4, 2005·1 cites·39 claims
- 2647US2008048274A1Semiconductor device including a gate electrode of lower electrical resistance and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2746US2006096541A1Apparatus and method of forming a layer on a semiconductor substrateSEO JUNG-HUN·Filed 2005·Application pending·0 cites
- 2846US2006045970A1ALD thin film deposition apparatus and thin film deposition method using sameSEO JUNG-HUN·Filed 2005·Application pending·0 cites
- 2943US2011053329A1Semiconductor device including a gate electrode of lower electrial resistance and method of manufacturing the sameSEO JUNG-HUN·Filed 2010·Application pending·0 cites
- 3042US7820244B2Method of forming a layer and method of removing reaction by-productsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 26, 2010·0 cites·20 claims
- 3142US2006292810A1Method of manufacturing a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3241US9704999B2Thin film transistors with trench-defined nanoscale channel lengthsWISCONSIN ALUMNI RES FOUND·Filed 2015·Granted Jul 11, 2017·0 cites·19 claims
- 3341US2006054087A1Process chamber for manufacturing seminconductor devicesSEO JUNG-HUN·Filed 2004·Application pending·0 cites
- 3441US2005150462A1Lift pin for used in semiconductor manufacturing facilities and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3541US2006021578A1Chemical vapor deposition apparatusSEO JUNG-HUN·Filed 2005·Application pending·0 cites
- 3641US2006024964A1Method and apparatus of forming thin film using atomic layer depositionSEO JUNG-HUN·Filed 2005·Application pending·0 cites
- 3741US2008044593A1Method of forming a material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3841US2005009336A1Metal deposition apparatus used in fabrication of semiconductor devices and methods of forming metal layers using the sameFiled 2004·Application pending·0 cites
- 3940US2007042132A1Method of forming plasma and method of forming a layer using the sameSEO JUNG-HUN·Filed 2006·Application pending·0 cites
- 4039US2005022741A1Chemical vapor deposition apparatus and method of forming thin layer using sameFiled 2004·Application pending·0 cites
- 4139US2004245635A1Methods for forming contacts in semiconductor devices having local silicide regions and semiconductor devices formed therebyFiled 2004·Application pending·0 cites
- 4239US2006137607A1Combination of showerhead and temperature control means for controlling the temperature of the showerhead, and deposition apparatus having the sameSEO JUNG-HUN·Filed 2005·Application pending·0 cites
- 4338US2006128127A1Method of depositing a metal compound layer and apparatus for depositing a metal compound layerSEO JUNG-HUN·Filed 2005·Application pending·0 cites
- 4438US2004192023A1Methods of forming conductive patterns using barrier layersFiled 2004·Application pending·0 cites
- 4536US2004094838A1Method for forming metal wiring layer of semiconductor deviceFiled 2003·Application pending·0 cites
- 4636US2004082167A1Methods of forming aluminum structures in microelectronic articles and articles fabricated therebyFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →