Inventor · disambiguated record
Hee Hyun Chang
Also filed as: CHANG HEE H · CHANG HEE HYUN
12 granted patents·3 pending applications·70 citations·filing 1995–2010
90Inventor score
Top patents by PatentIndex Score
15 records- 0183US7259976B2Program control circuit of flash memory device having MLC and method thereofHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Aug 21, 2007·13 cites·11 claims
- 0268US6339006B1Flash EEPROM cell and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jan 15, 2002·13 cites·14 claims
- 0364US6407947B2Method of erasing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jun 18, 2002·14 cites·22 claims
- 0460US7169670B2Method of forming gate oxide layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 30, 2007·7 cites·8 claims
- 0559US7696554B2Flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Apr 13, 2010·1 cites·10 claims
- 0657US7414871B2Program control circuit of flash memory device having MLC and method thereofHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 19, 2008·3 cites·7 claims
- 0754US8247299B2Flash memory device and fabrication method thereofJANG PHIL SOON·Filed 2008·Granted Aug 21, 2012·3 cites·5 claims
- 0850US7034360B2High voltage transistor and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 25, 2006·4 cites·9 claims
- 0947US7316955B2Method of manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jan 8, 2008·0 cites·7 claims
- 1047US6465302B1Method of manufacturing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 15, 2002·3 cites·2 claims
- 1145US7109109B2Contact plug in semiconductor device and method of forming the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 19, 2006·2 cites·14 claims
- 1242US2008003750A1Method of manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1341US5536668AMethod of manufacturing a virtual ground split gate nonvolatile memory deviceHYUNDAI ELECTRONICS IND·Filed 1995·Granted Jul 16, 1996·7 cites·3 claims
- 1436US2002056870A1Flash EEPROM cell and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2002·Application pending·0 cites
- 1535US2011095352A1Flash memory device and fabrication method thereofHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →