Flash memory device and fabrication method thereof

Abstract

The present invention relates to a flash memory device and a fabrication method thereof. In an embodiment, a flash memory device includes a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate, an isolation layer formed in a field region of the semiconductor substrate and projected higher than the floating gate, a dielectric layer formed over the semiconductor substrate including the floating gate and the isolation layer, and a control gate formed on the dielectric layer.

1 . A flash memory device, comprising:
 a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate;   an isolation layer formed in a field region of the semiconductor substrate and configured to project higher than the floating gate;   a dielectric layer formed over the semiconductor substrate including the floating gate and the isolation layer; and   a control gate formed on the dielectric layer.   
     
     
         2 . The flash memory device of  claim 1 , wherein the isolation layer is projected 300 to 500 angstrom higher than the floating gate. 
     
     
         3 . The flash memory device of  claim 1 , wherein the dielectric layer is formed of a high dielectric (high-k) material. 
     
     
         4 . The flash memory device of  claim 3 , wherein the high-k material is formed of any one of Al 2 O 3 , HfO 3 , ZrO 3  and combination thereof. 
     
     
         5 - 12 . (canceled)