Inventor · disambiguated record
Sasha Kweskin
Also filed as: KWESKIN SASHA · KWESKIN SASHA J · KWESKIN SASHA JOSEPH
16 granted patents·6 pending applications·79 citations·filing 2008–2024
90Inventor score
Files withGLOBALWAFERS CO LTD7SUNEDISON SEMICONDUCTOR LTD UEN201334164H5SUNEDISON SEMICONDUCTOR LTD3APPLIED MATERIALS INC2KWESKIN SASHA2
Top patents by PatentIndex Score
22 records- 0196US7994019B1Silicon-ozone CVD with reduced pattern loading using incubation period depositionAPPLIED MATERIALS INC·Filed 2010·Granted Aug 9, 2011·40 cites·19 claims
- 0293US8236708B2Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursorKWESKIN SASHA·Filed 2010·Granted Aug 7, 2012·27 cites·14 claims
- 0380US10573550B2Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD·Filed 2017·Granted Feb 25, 2020·3 cites·48 claims
- 0480US10529616B2Manufacturing method of smoothing a semiconductor surfaceSUNEDISON SEMICONDUCTOR LTD·Filed 2016·Granted Jan 7, 2020·2 cites·11 claims
- 0577US2024258156A1Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereofGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0673US8476142B2Preferential dielectric gapfillKWESKIN SASHA·Filed 2011·Granted Jul 2, 2013·4 cites·13 claims
- 0772US10192778B2Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Jan 29, 2019·1 cites·23 claims
- 0870US10985049B2Manufacturing method of smoothing a semiconductor surfaceGLOBALWAFERS CO LTD·Filed 2020·Granted Apr 20, 2021·0 cites·31 claims
- 0970US10026642B2Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Jul 17, 2018·1 cites·17 claims
- 1066US11984348B2Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereofGLOBALWAFERS CO LTD·Filed 2020·Granted May 14, 2024·0 cites·19 claims
- 1164US10818539B2Manufacturing method of smoothing a semiconductor surfaceGLOBALWAFERS CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·45 claims
- 1264US10755966B2Manufacturing method of smoothing a semiconductor surfaceGLOBALWAFERS CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·24 claims
- 1363US10593748B2Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereofGLOBALWAFERS CO LTD·Filed 2017·Granted Mar 17, 2020·1 cites·48 claims
- 1458US10796946B2Method of manufacture of a semiconductor on insulator structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2019·Granted Oct 6, 2020·0 cites·26 claims
- 1555US11114332B2Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD·Filed 2017·Granted Sep 7, 2021·0 cites·36 claims
- 1654US10475696B2Method of manufacture of a semiconductor on insulator structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 12, 2019·0 cites·30 claims
- 1750US2014144846A1Methods For The Recycling of Wire-Saw Cutting FluidMEMC SINGAPORE PTE LTD UEN200614797D·Filed 2012·Application pending·0 cites
- 1850US2014145309A1Systems For The Recycling of Wire-Saw Cutting FluidUEN200614797D MEMC SINGAPORE PTE LTD·Filed 2012·Application pending·0 cites
- 1947US2008311753A1Oxygen sacvd to form sacrifical oxide liners in substrate gapsAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2042US2014096793A1Uv treatment of polished wafersSUNEDISON INC·Filed 2013·Application pending·0 cites
- 2137US11848227B2Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatmentGLOBALWAFERS CO LTD·Filed 2017·Granted Dec 19, 2023·0 cites·27 claims
- 2231US2015357180A1Methods for cleaning semiconductor substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →