Inventor · disambiguated record
In-Seok Yeo
Also filed as: YEO IN H · YEO IN-SEOK
50 granted patents·15 pending applications·915 citations·filing 1998–2023
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD29HYUNDAI ELECTRONICS IND13HYNIX SEMICONDUCTOR INC9HUO ZONG-LIANG4AHN JUNGOH1
Top patents by PatentIndex Score
65 records- 0197US7419888B2Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·71 cites·35 claims
- 0296US6537901B2Method of manufacturing a transistor in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Mar 25, 2003·146 cites·69 claims
- 0395US7338862B2Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·40 cites·14 claims
- 0495US6506676B2Method of manufacturing semiconductor devices with titanium aluminum nitride work functionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 14, 2003·98 cites·21 claims
- 0594US7368788B2SRAM cells having inverters and access transistors therein with vertical fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·33 cites·7 claims
- 0688US8084316B2Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structuresHUO ZONG-LIANG·Filed 2006·Granted Dec 27, 2011·18 cites·12 claims
- 0788US7982256B2Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 19, 2011·14 cites·18 claims
- 0888US7482206B2Semiconductor devices having nano-line channels and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·17 cites·16 claims
- 0988US6281054B1SOI device and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Aug 28, 2001·37 cites·9 claims
- 1088US6261911B1Method of manufacturing a junction in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jul 17, 2001·46 cites·16 claims
- 1186US6514827B2Method for fabricating a dual metal gate for a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Feb 4, 2003·38 cites·10 claims
- 1284US7148106B2Methods of fabricating non-volatile memory devices including nanocrystalsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 12, 2006·27 cites·32 claims
- 1382US6340629B1Method for forming gate electrodes of semiconductor device using a separated WN layerHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jan 22, 2002·65 cites·6 claims
- 1481US7659624B2Semiconductor device having a nanoscale conductive structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 9, 2010·10 cites·26 claims
- 1581US7344773B2Methods of forming nanoparticle based monolayer films with high particle density and devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·11 cites·34 claims
- 1680US6451639B1Method for forming a gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 17, 2002·27 cites·13 claims
- 1780US6417055B2Method for forming gate electrode for a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 9, 2002·30 cites·11 claims
- 1878US6436775B2MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thicknessHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Aug 20, 2002·22 cites·16 claims
- 1976US8269268B2Charge trap flash memory device and memory card and system including the sameHUO ZONG-LIANG·Filed 2008·Granted Sep 18, 2012·7 cites·12 claims
- 2076US7528042B2Method for fabricating semiconductor devices having dual gate oxide layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·4 cites·4 claims
- 2176US6828185B2CMOS of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 7, 2004·20 cites·3 claims
- 2274US7875920B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 25, 2011·3 cites·9 claims
- 2373US8405137B2Single transistor floating-body DRAM devices having vertical channel transistor structuresHUO ZONG-LIANG·Filed 2011·Granted Mar 26, 2013·3 cites·12 claims
- 2471US7354823B2Methods of forming integrated circuit devices having carbon nanotube electrodes thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·4 cites·8 claims
- 2571US6180985B1SOI device and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jan 30, 2001·33 cites·7 claims
- 2667US8535753B2Methods of forming carbon nanotubesWANG XIANFENG·Filed 2009·Granted Sep 17, 2013·1 cites·15 claims
- 2766US7560383B2Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·2 cites·27 claims
- 2864US7384841B2DRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 10, 2008·5 cites·11 claims
- 2963US8299454B2Nano line structures in microelectronic devicesHUO ZONGLIANG·Filed 2010·Granted Oct 30, 2012·1 cites·12 claims
- 3062US7795659B2DRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·4 cites·15 claims
- 3159US7799633B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·1 cites·26 claims
- 3258US7915668B2Semiconductor device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 29, 2011·2 cites·17 claims
- 3358US6281085B1Method of manufacturing a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Aug 28, 2001·8 cites·12 claims
- 3455US6165884AMethod of forming gate electrode in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Dec 26, 2000·15 cites·7 claims
- 3554US8125131B2Nano filament structure and methods of forming the sameKOLAKE SUBRAMANYA MAYYA·Filed 2009·Granted Feb 28, 2012·2 cites·6 claims
- 3654US7157339B2Method for fabricating semiconductor devices having dual gate oxide layersHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 2, 2007·3 cites·11 claims
- 3753US2025340911A1Method for producing from fatty alcohols monomers for producing various synthetic resinsAHN JUNGOH·Filed 2023·Application pending·0 cites
- 3852US7863138B2Methods of forming nano line structures in microelectronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 4, 2011·0 cites·15 claims
- 3951US7651904B2Methods of fabricating non-volatile memory devices including nanocrystalsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 26, 2010·0 cites·12 claims
- 4051US2007053824A1Method of forming carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4150US7535778B2Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·0 cites·23 claims
- 4250US6468914B1Method of forming gate electrode in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Oct 22, 2002·11 cites·32 claims
- 4349US8871075B2Method of forming metal pattern and method of manufacturing display substrate having the sameBYEON JEONG-HOON·Filed 2012·Granted Oct 28, 2014·0 cites·18 claims
- 4448US6303494B1Method of forming gate electrode in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Oct 16, 2001·10 cites·11 claims
- 4548US2009114904A1Semiconductor devices having nano-line channelsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4648US2008142866A1Integrated Circuit Memory Devices and Capacitors Having Carbon Nanotube ElectrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4747US6218252B1Method of forming gate in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 17, 2001·10 cites·16 claims
- 4847US2008211039A1Nonvolatile memory devices having metal silicide nanocrystals, methods of forming metal silicide nanocrystals, and methods of forming nonvolatile memory devices having metal silicide nanocrystalsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4947US2007205509A1Semiconductor device with batterySAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 5046US2008128802A1Single transistor floating body dram cell having recess channel transistor structureHUO ZONG-LIANG·Filed 2008·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
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