Semiconductor devices having nano-line channels

Abstract

A semiconductor device includes a substrate, a gate electrode on the substrate and source and drain electrodes disposed at respective sides of the gate electrode. The device further includes a nano-line passing through the gate electrode and extending into the source and drain electrodes and having semiconductor characteristics. The nano-line may include a nano-wire and/or a nano-tube. A gate insulating layer may be interposed between the nano-line and the gate electrode. The source and drain electrodes may be disposed adjacent respective opposite sidewalls of the gate electrode, and the gate insulating layer may be further interposed between the source and drain electrodes and the gate electrode. Fabrication methods for such devices are also described.

1 . A semiconductor device comprising:
 a substrate;   a gate electrode on the substrate;   source and drain electrodes disposed at respective sides of the gate electrode; and   a nano-line passing through the gate electrode, extending into the source and drain electrodes and having semiconductor characteristics.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the nano-line comprises a nano-wire and/or a nano-tube. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the nano-line comprises a Si nano-wire, a Ge nano-wire, a GaN nano-wire, a GaP nano-wire, a SiC nano-wire, a ZnO nano-wire, a carbon nano-tube and/or an organic nano-tube. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising a gate insulating layer interposed between the nano-line and the gate electrode. 
     
     
         5 . The semiconductor device of  claim 4 , wherein the source and drain electrodes are disposed adjacent respective opposite sidewalls of the gate electrode, and wherein the gate insulating layer is further interposed between the source and drain electrodes and the gate electrode.