Inventor · disambiguated record
Naoshi Adachi
Also filed as: ADACHI NAOSHI
15 granted patents·5 pending applications·1,768 citations·filing 1993–2011
94Inventor score
Files withSUMITOMO MITSUBISHI SILICON6ADACHI NAOSHI5SUMCO CORP4SUMITOMO METAL IND2SUMITOMO SITIX CORP2
Top patents by PatentIndex Score
20 records- 0198US7329947B2Heat treatment jig for semiconductor substrateSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Feb 12, 2008·560 cites·8 claims
- 0298US7210925B2Heat treatment jig for silicon semiconductor substrateSUMITOMO MITSUBISHI SILICON·Filed 2005·Granted May 1, 2007·480 cites·17 claims
- 0398US7163393B2Heat treatment jig for semiconductor silicon substrateSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Jan 16, 2007·482 cites·8 claims
- 0494US7331780B2Heat treatment jig for semiconductor waferSUMCO CORP·Filed 2005·Granted Feb 19, 2008·33 cites·19 claims
- 0577US5508207AMethod of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminantsSUMITOMO SITIX CORP·Filed 1993·Granted Apr 16, 1996·69 cites·1 claims
- 0676US7253082B2Pasted SOI substrate, process for producing the same and semiconductor deviceSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Aug 7, 2007·25 cites·10 claims
- 0774US6129787ASemiconductor silicon wafer, semiconductor silicon wafer fabrication method and annealing equipmentSUMITOMO METAL IND·Filed 1998·Granted Oct 10, 2000·45 cites·24 claims
- 0874US5931662ASilicon single crystal wafer annealing method and equipment and silicon single crystal wafer and manufacturing method related theretoSUMITOMO SITIX CORP·Filed 1997·Granted Aug 3, 1999·43 cites·17 claims
- 0968US7442038B2Heat treatment jig for semiconductor silicon substrateSUMITOMO MITSUBISHI SILICON·Filed 2006·Granted Oct 28, 2008·2 cites·1 claims
- 1062US6074479ASilicon single crystal wafer annealing method and equipment, and silicon single crystal wafer and manufacturing method related theretoSUMITOMO METAL IND·Filed 1999·Granted Jun 13, 2000·24 cites·4 claims
- 1161US7560363B2Manufacturing method for SIMOX substrateSUMCO CORP·Filed 2005·Granted Jul 14, 2009·2 cites·2 claims
- 1259US8030184B2Epitaxial wafer and method of producing the sameSUMCO CORP·Filed 2008·Granted Oct 4, 2011·1 cites·8 claims
- 1347US2010022066A1Method for producing high-resistance simox waferSUMCO CORP·Filed 2009·Application pending·0 cites
- 1445US8105078B2Heat treatment jig for semiconductor silicon substrates and method for manufacturing the sameADACHI NAOSHI·Filed 2007·Granted Jan 31, 2012·0 cites·20 claims
- 1545US6875643B2SOI substrate and manufacturing method thereofSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Apr 5, 2005·2 cites·22 claims
- 1642US2005158921A1SOI substrateFiled 2005·Application pending·0 cites
- 1741US8568537B2Epitaxial wafer and method of producing the sameADACHI NAOSHI·Filed 2011·Granted Oct 29, 2013·0 cites·4 claims
- 1836US2006189169A1Method for heat treatment of silicon wafersADACHI NAOSHI·Filed 2006·Application pending·0 cites
- 1936US2008044669A1Method for Manufacturing Simox Substrate and Simox Substrate Obtained by the MethodADACHI NAOSHI·Filed 2005·Application pending·0 cites
- 2035US2008251879A1Method for Manufacturing Simox Substrate and Simox Substrate Obtained by this MethodADACHI NAOSHI·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →