Inventor · disambiguated record
Subhash Deshmukh
Also filed as: DESHMUKH SUBHASH · DESHMUKH SUBHASH MADHUKAR
15 granted patents·9 pending applications·445 citations·filing 1997–2016
94Inventor score
Files withAPPLIED MATERIALS INC13COLLINS KENNETH S3AMERICAN MICRO SYST2CHENG CHIA-CHENG2LAM RES CORP2
Top patents by PatentIndex Score
24 records- 0198US7084070B1Treatment for corrosion in substrate processingLAM RES CORP·Filed 2003·Granted Aug 1, 2006·247 cites·50 claims
- 0296US9576810B2Process for etching metal using a combination of plasma and solid state sourcesAPPLIED MATERIALS INC·Filed 2014·Granted Feb 21, 2017·40 cites·19 claims
- 0396US7968469B2Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformityAPPLIED MATERIALS INC·Filed 2007·Granted Jun 28, 2011·46 cites·26 claims
- 0492US9411237B2Resist hardening and development processes for semiconductor device manufacturingAPPLIED MATERIALS INC·Filed 2014·Granted Aug 9, 2016·11 cites·18 claims
- 0590US7879731B2Improving plasma process uniformity across a wafer by apportioning power among plural VHF sourcesAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·13 cites·28 claims
- 0688US8076247B2Plasma process uniformity across a wafer by controlling RF phase between opposing electrodesCOLLINS KENNETH S·Filed 2007·Granted Dec 13, 2011·11 cites·20 claims
- 0782US8475625B2Apparatus for etching high aspect ratio featuresPAMARTHY SHARMA·Filed 2006·Granted Jul 2, 2013·15 cites·22 claims
- 0882US8080479B2Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonatorCOLLINS KENNETH S·Filed 2007·Granted Dec 20, 2011·6 cites·20 claims
- 0977US7884025B2Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sourcesAPPLIED MATERIALS INC·Filed 2007·Granted Feb 8, 2011·4 cites·24 claims
- 1077US7323116B2Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltageLAM RES CORP·Filed 2004·Granted Jan 29, 2008·29 cites·32 claims
- 1174US9378941B2Interface treatment of semiconductor surfaces with high density low energy plasmaAPPLIED MATERIALS INC·Filed 2013·Granted Jun 28, 2016·3 cites·11 claims
- 1269US7846846B2Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewallsAPPLIED MATERIALS INC·Filed 2007·Granted Dec 7, 2010·4 cites·19 claims
- 1353US9721802B2LED based optical source coupled with plasma sourceAPPLIED MATERIALS INC·Filed 2014·Granted Aug 1, 2017·0 cites·18 claims
- 1453US2014262755A1Uv-assisted reactive ion etch for copperAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 1549US2017011887A1Uv-assisted reactive ion etch for copperAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
- 1649US2016329222A1Resist hardening and development processes for semiconductor device manufacturingAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
- 1746US6265729B1Method for detecting and characterizing plasma-etch induced damage in an integrated circuitAMERICAN MICRO SYST·Filed 1999·Granted Jul 24, 2001·11 cites·19 claims
- 1844US2014273487A1Pulsed dc plasma etching process and apparatusAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 1944US2008178803A1Plasma reactor with ion distribution uniformity controller employing plural vhf sourcesCOLLINS KENNETH S·Filed 2007·Application pending·0 cites
- 2043US2009156012A1Method for fabricating low k dielectric dual damascene structuresAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2142US2010330805A1Methods for forming high aspect ratio features on a substrateDOAN KENNY LINH·Filed 2007·Application pending·0 cites
- 2235US6271539B1Electrical diagnostic technique for silicon plasma-etch induced damage characterizationAMERICAN MICRO SYST·Filed 1997·Granted Aug 7, 2001·5 cites·18 claims
- 2333US2006065632A1Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequencyCHENG CHIA-CHENG·Filed 2004·Application pending·0 cites
- 2433US2006065631A1Methods and apparatus for monitoring a process in a plasma processing system by measuring impedanceCHENG CHIA-CHENG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →