Inventor · disambiguated record
Amir Al-Bayati
Also filed as: AL-BAYATI AMIR · AL-BAYATI AMIR HAMED
51 granted patents·20 pending applications·6,879 citations·filing 1999–2012
99Inventor score
Top patents by PatentIndex Score
71 records- 0199US7695590B2Chemical vapor deposition plasma reactor having plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 13, 2010·195 cites·31 claims
- 0299US7429532B2Semiconductor substrate process using an optically writable carbon-containing maskAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·539 cites·18 claims
- 0399US7422775B2Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·535 cites·17 claims
- 0499US7393765B2Low temperature CVD process with selected stress of the CVD layer on CMOS devicesAPPLIED MATERIALS INC·Filed 2007·Granted Jul 1, 2008·562 cites·16 claims
- 0599US7335611B2Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layerAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·535 cites·20 claims
- 0699US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard maskAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·580 cites·17 claims
- 0799US7312148B2Copper barrier reflow process employing high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·537 cites·21 claims
- 0899US7312162B2Low temperature plasma deposition process for carbon layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·544 cites·19 claims
- 0999US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 19, 2006·551 cites·15 claims
- 1098US8445075B2Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectricsXU HUIWEN·Filed 2010·Granted May 21, 2013·517 cites·10 claims
- 1198US7291360B2Chemical vapor deposition plasma process using plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Nov 6, 2007·186 cites·62 claims
- 1298US7244474B2Chemical vapor deposition plasma process using an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Jul 17, 2007·195 cites·70 claims
- 1398US7094670B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Aug 22, 2006·79 cites·23 claims
- 1497US7465478B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Dec 16, 2008·39 cites·18 claims
- 1597US7291545B2Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·73 cites·20 claims
- 1697US7292428B2Electrostatic chuck with smart lift-pin mechanism for a plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·57 cites·20 claims
- 1797US6893907B2Fabrication of silicon-on-insulator structure using plasma immersion ion implantationAPPLIED MATERIALS INC·Filed 2004·Granted May 17, 2005·127 cites·59 claims
- 1896US7879683B2Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delayAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·35 cites·17 claims
- 1996US7288491B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Oct 30, 2007·41 cites·22 claims
- 2096US7183177B2Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancementAPPLIED MATERIALS INC·Filed 2004·Granted Feb 27, 2007·119 cites·27 claims
- 2195US7666464B2RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactorAPPLIED MATERIALS INC·Filed 2004·Granted Feb 23, 2010·63 cites·39 claims
- 2295US7137354B2Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Nov 21, 2006·63 cites·79 claims
- 2395US7037813B2Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·76 cites·86 claims
- 2494US8197636B2Systems for plasma enhanced chemical vapor deposition and bevel edge etchingSHAH ASHISH·Filed 2008·Granted Jun 12, 2012·30 cites·11 claims
- 2593US7767561B2Plasma immersion ion implantation reactor having an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Aug 3, 2010·68 cites·67 claims
- 2692US7223676B2Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layerAPPLIED MATERIALS INC·Filed 2004·Granted May 29, 2007·49 cites·64 claims
- 2791US7566655B2Integration process for fabricating stressed transistor structureAPPLIED MATERIALS INC·Filed 2006·Granted Jul 28, 2009·20 cites·12 claims
- 2890US7700465B2Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Apr 20, 2010·25 cites·89 claims
- 2990US7303982B2Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Dec 4, 2007·33 cites·84 claims
- 3090US7225047B2Method, system and medium for controlling semiconductor wafer processes using critical dimension measurementsAPPLIED MATERIALS INC·Filed 2002·Granted May 29, 2007·46 cites·44 claims
- 3189US8058156B2Plasma immersion ion implantation reactor having multiple ion shower gridsHANAWA HIROJI·Filed 2004·Granted Nov 15, 2011·32 cites·118 claims
- 3289US7294563B2Semiconductor on insulator vertical transistor fabrication and doping processAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·43 cites·24 claims
- 3387US7642180B2Semiconductor on insulator vertical transistor fabrication and doping processAPPLIED MATERIALS INC·Filed 2007·Granted Jan 5, 2010·12 cites·26 claims
- 3487US7166524B2Method for ion implanting insulator material to reduce dielectric constantAPPLIED MATERIALS INC·Filed 2004·Granted Jan 23, 2007·46 cites·38 claims
- 3587US6559454B1Ion beam generation apparatusAPPLIED MATERIALS INC·Filed 1999·Granted May 6, 2003·66 cites·11 claims
- 3686US7320734B2Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Jan 22, 2008·24 cites·22 claims
- 3786US6897131B2Advances in spike anneal processes for ultra shallow junctionsAPPLIED MATERIALS INC·Filed 2003·Granted May 24, 2005·45 cites·12 claims
- 3884US7482255B2Method of ion implantation to reduce transient enhanced diffusionGRAOUI HOUDA·Filed 2005·Granted Jan 27, 2009·14 cites·24 claims
- 3982US8902428B2Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafersSCHLEZINGER ASAF·Filed 2012·Granted Dec 2, 2014·6 cites·19 claims
- 4081US7816205B2Method of forming non-volatile memory having charge trap layer with compositional gradientAPPLIED MATERIALS INC·Filed 2008·Granted Oct 19, 2010·5 cites·21 claims
- 4180US7777197B2Vacuum reaction chamber with x-lamp heaterAPPLIED MATERIALS INC·Filed 2006·Granted Aug 17, 2010·7 cites·20 claims
- 4279US8900405B2Plasma immersion ion implantation reactor with extended cathode process ringPORSHNEV PETER I·Filed 2007·Granted Dec 2, 2014·6 cites·18 claims
- 4376US7428915B2O-ringless tandem throttle valve for a plasma reactor chamberAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·8 cites·6 claims
- 4474US7479456B2Gasless high voltage high contact force wafer contact-cooling electrostatic chuckAPPLIED MATERIALS INC·Filed 2004·Granted Jan 20, 2009·18 cites·36 claims
- 4571US8252653B2Method of forming a non-volatile memory having a silicon nitride charge trap layerBALSEANU MIHAELA·Filed 2008·Granted Aug 28, 2012·2 cites·23 claims
- 4670US6646276B1Ion implantation beam monitorAPPLIED MATERIALS INC·Filed 1999·Granted Nov 11, 2003·24 cites·15 claims
- 4766US9337072B2Apparatus and method for substrate clamping in a plasma chamberBALASUBRAMANIAN GANESH·Filed 2010·Granted May 10, 2016·2 cites·12 claims
- 4858US8501568B2Method of forming flash memory with ultraviolet treatmentBALSEANU MIHAELA·Filed 2008·Granted Aug 6, 2013·0 cites·20 claims
- 4958US2007119546A1Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 5058US2008173237A1Plasma Immersion ChamberCOLLINS KENNETH S·Filed 2008·Application pending·0 cites
Showing the top 50 of 71 patent records by PatentIndex Score.
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