Inventor · disambiguated record
Frank Jakubowski
Also filed as: JAKUBOWSKI FRANK
30 granted patents·5 pending applications·124 citations·filing 2003–2018
95Inventor score
Files withGLOBALFOUNDRIES INC13JAKUBOWSKI FRANK6INFINEON TECHNOLOGIES AG5BAARS PETER4SCHLOESSER TILL2
Top patents by PatentIndex Score
35 records- 0193US9929148B1Semiconductor device including buried capacitive structures and a method of forming the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 27, 2018·8 cites·16 claims
- 0293US8722523B2Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structureSCHLOESSER TILL·Filed 2012·Granted May 13, 2014·16 cites·23 claims
- 0392US9023715B2Methods of forming bulk FinFET devices so as to reduce punch through leakage currentsFAUL JUERGEN·Filed 2012·Granted May 5, 2015·28 cites·19 claims
- 0491US7274060B2Memory cell array and method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 25, 2007·16 cites·19 claims
- 0590US9299616B1Integrated circuits with separate workfunction material layers and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 29, 2016·10 cites·20 claims
- 0684US8823149B2Contact landing pads for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 2, 2014·6 cites·11 claims
- 0779US8609457B2Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making sameBAARS PETER·Filed 2011·Granted Dec 17, 2013·5 cites·16 claims
- 0877US8415214B2STI silicon nitride cap for flat FEOL topologyJAKUBOWSKI FRANK·Filed 2011·Granted Apr 9, 2013·5 cites·15 claims
- 0974US8956928B2Contact structure for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 17, 2015·3 cites·26 claims
- 1071US7618867B2Method of forming a doped portion of a semiconductor and method of forming a transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 17, 2009·5 cites·25 claims
- 1170US8603895B1Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequenceJAKUBOWSKI FRANK·Filed 2012·Granted Dec 10, 2013·3 cites·31 claims
- 1267US8455960B2High performance HKMG stack for gate first integrationJAKUBOWSKI FRANK·Filed 2011·Granted Jun 4, 2013·2 cites·19 claims
- 1365US9064733B2Contact structure for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 23, 2015·1 cites·24 claims
- 1463US8697557B2Method of removing gate cap materials while protecting active areaBAARS PETER·Filed 2011·Granted Apr 15, 2014·1 cites·17 claims
- 1561US8962414B1Reduced spacer thickness in semiconductor device fabricationGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 24, 2015·1 cites·14 claims
- 1660US8835245B2Semiconductor device comprising self-aligned contact elementsBAARS PETER·Filed 2012·Granted Sep 16, 2014·1 cites·20 claims
- 1759US7078748B2Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Jul 18, 2006·9 cites·15 claims
- 1857US10466126B2MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)GLOBALFOUNDRIES INC·Filed 2018·Granted Nov 5, 2019·0 cites·10 claims
- 1956US10056369B1Semiconductor device including buried capacitive structures and a method of forming the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 21, 2018·0 cites·19 claims
- 2056US8951920B2Contact landing pads for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 10, 2015·0 cites·11 claims
- 2154US6967133B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 22, 2005·4 cites·15 claims
- 2252US10535674B2Method of forming a semiconductor device structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 14, 2020·0 cites·17 claims
- 2352US2007290249A1Integrated Circuit Including a Memory Cell ArrayINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 2451US9748259B1Method of forming a semiconductor device structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·0 cites·19 claims
- 2551US9324854B2Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structureGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·0 cites·17 claims
- 2650US2015228656A1REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNELGLOBAL FOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2747US8716077B2Replacement gate compatible eDRAM transistor with recessed channelSCHLOESSER TILL·Filed 2011·Granted May 6, 2014·0 cites·12 claims
- 2842US8853051B2Methods of recessing an active region and STI structures in a common etch processJAKUBOWSKI FRANK·Filed 2012·Granted Oct 7, 2014·0 cites·18 claims
- 2940US8679940B2Methods for fabricating semiconductor devices with isolation regions having uniform stepheightsJAKUBOWSKI FRANK·Filed 2012·Granted Mar 25, 2014·0 cites·20 claims
- 3040US8673696B2SOI semiconductor device comprising a substrate diode with reduced metal silicide leakageBAARS PETER·Filed 2012·Granted Mar 18, 2014·0 cites·17 claims
- 3140US2006228876A1Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 3238US8716102B2Methods of forming isolation structures for semiconductor devices by performing a dry chemical removal processJAKUBOWSKI FRANK·Filed 2012·Granted May 6, 2014·0 cites·13 claims
- 3337US2018175209A1Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3433US9236240B2Wafer edge protectionGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jan 12, 2016·0 cites·17 claims
- 3532US2008124920A1Fabrication method for an integrated circuit structureFITZ CLEMENS·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →