Inventor · disambiguated record
Roza Kotlyar
Also filed as: KOTLYAR ROZA
47 granted patents·9 pending applications·300 citations·filing 2005–2025
98Inventor score
Top patents by PatentIndex Score
56 records- 0198US8847281B2High mobility strained channels for fin-based transistorsCEA STEPHEN M·Filed 2012·Granted Sep 30, 2014·47 cites·22 claims
- 0297US8901537B2Transistors with high concentration of boron doped germaniumMURTHY ANAND S·Filed 2010·Granted Dec 2, 2014·56 cites·25 claims
- 0397US8890119B2Vertical nanowire transistor with axially engineered semiconductor and gate metallizationDOYLE BRIAN S·Filed 2012·Granted Nov 18, 2014·31 cites·18 claims
- 0496US9627384B2Transistors with high concentration of boron doped germaniumINTEL CORP·Filed 2014·Granted Apr 18, 2017·12 cites·20 claims
- 0595US9306063B2Vertical transistor devices for embedded memory and logic technologiesDOYLE BRIAN S·Filed 2013·Granted Apr 5, 2016·20 cites·19 claims
- 0693US11387320B2Transistors with high concentration of germaniumINTEL CORP·Filed 2019·Granted Jul 12, 2022·3 cites·20 claims
- 0793US10868246B2Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayerINTEL CORP·Filed 2016·Granted Dec 15, 2020·15 cites·23 claims
- 0893US9184294B2High mobility strained channels for fin-based transistorsINTEL CORP·Filed 2014·Granted Nov 10, 2015·11 cites·17 claims
- 0993US8558279B2Non-planar device having uniaxially strained semiconductor body and method of making sameCEA STEPHEN M·Filed 2010·Granted Oct 15, 2013·15 cites·20 claims
- 1092US9293560B2Vertical nanowire transistor with axially engineered semiconductor and gate metallizationINTEL CORP·Filed 2014·Granted Mar 22, 2016·8 cites·8 claims
- 1192US8890120B2Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2012·Granted Nov 18, 2014·13 cites·14 claims
- 1291US10790281B2Stacked channel structures for MOSFETsINTEL CORP·Filed 2015·Granted Sep 29, 2020·8 cites·25 claims
- 1390US11367722B2Stacked nanowire transistor structure with different channel geometries for stressINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·22 claims
- 1489US11922274B1Quantum dot devices with side and center screening gatesINTEL CORP·Filed 2021·Granted Mar 5, 2024·2 cites·20 claims
- 1589US11581406B2Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layerINTEL CORP·Filed 2021·Granted Feb 14, 2023·1 cites·17 claims
- 1689US10153372B2High mobility strained channels for fin-based NMOS transistorsINTEL CORP·Filed 2014·Granted Dec 11, 2018·5 cites·25 claims
- 1789US8592803B2Germanium-based quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 26, 2013·6 cites·17 claims
- 1889US8193523B2Germanium-based quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Jun 5, 2012·9 cites·20 claims
- 1987US11107891B2Hexagonal arrays for quantum dot devicesINTEL CORP·Filed 2017·Granted Aug 31, 2021·4 cites·19 claims
- 2087US9935107B2CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the sameINTEL CORP·Filed 2013·Granted Apr 3, 2018·6 cites·20 claims
- 2184US11158731B2Quantum well stacks for quantum dot devicesINTEL CORP·Filed 2017·Granted Oct 26, 2021·3 cites·19 claims
- 2284US9871117B2Vertical transistor devices for embedded memory and logic technologiesINTEL CORP·Filed 2016·Granted Jan 16, 2018·3 cites·18 claims
- 2383US9893149B2High mobility strained channels for fin-based transistorsINTEL CORP·Filed 2015·Granted Feb 13, 2018·3 cites·20 claims
- 2482US9219135B2Germanium-based quantum well devicesINTEL CORP·Filed 2013·Granted Dec 22, 2015·3 cites·13 claims
- 2581US9911835B2Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETsINTEL CORP·Filed 2017·Granted Mar 6, 2018·2 cites·21 claims
- 2677US11195919B2Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layerINTEL CORP·Filed 2018·Granted Dec 7, 2021·1 cites·5 claims
- 2775US10665770B2Fin strain in quantum dot devicesINTEL CORP·Filed 2018·Granted May 26, 2020·1 cites·25 claims
- 2875US2023170388A1Cmos finfet device having strained sige fins and a strained si cladding layer on the nmos channelDAEDALUS PRIME LLC·Filed 2023·Application pending·0 cites
- 2973US12336278B2Gate-all-around integrated circuit structures having high mobilityINTEL CORP·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3073US11183564B2Quantum dot devices with strain controlINTEL CORP·Filed 2018·Granted Nov 23, 2021·1 cites·25 claims
- 3171US9818864B2Vertical nanowire transistor with axially engineered semiconductor and gate metallizationINTEL CORP·Filed 2016·Granted Nov 14, 2017·1 cites·22 claims
- 3270US11677017B2Quantum well stacks for quantum dot devicesINTEL CORP·Filed 2021·Granted Jun 13, 2023·0 cites·24 claims
- 3370US9583602B2Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2016·Granted Feb 28, 2017·1 cites·12 claims
- 3467US10396211B2Functional metal oxide based microelectronic devicesINTEL CORP·Filed 2015·Granted Aug 27, 2019·1 cites·26 claims
- 3566US2017221724A1Transistors with high concentration of boron doped germaniumINTEL CORP·Filed 2017·Application pending·0 cites
- 3664US11538806B2Gate-all-around integrated circuit structures having high mobilityINTEL CORP·Filed 2018·Granted Dec 27, 2022·0 cites·21 claims
- 3764US10600787B2Silicon PMOS with gallium nitride NMOS for voltage regulationINTEL CORP·Filed 2016·Granted Mar 24, 2020·1 cites·25 claims
- 3863US2020381549A1High mobility strained channels for fin-based nmos transistorsINTEL CORP·Filed 2020·Application pending·0 cites
- 3962US10854752B2High mobility strained channels for fin-based NMOS transistorsINTEL CORP·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 4061US9871106B2Heterogeneous pocket for tunneling field effect transistors (TFETs)INTEL CORP·Filed 2013·Granted Jan 16, 2018·1 cites·20 claims
- 4160US9876014B2Germanium-based quantum well devicesINTEL CORP·Filed 2016·Granted Jan 23, 2018·0 cites·9 claims
- 4259US12230687B2Lateral gate material arrangements for quantum dot devicesINTEL CORP·Filed 2020·Granted Feb 18, 2025·0 cites·21 claims
- 4359US2024354613A1Method and apparatus for loading classical data into quantum computersSAWAYA NICHOLAS P D·Filed 2023·Application pending·0 cites
- 4459US2025351743A1Technologies for scalable spin qubit arraysINTEL CORP·Filed 2025·Application pending·0 cites
- 4558US9478635B2Germanium-based quantum well devicesINTEL CORP·Filed 2015·Granted Oct 25, 2016·0 cites·14 claims
- 4657US9412872B2N-type and P-type tunneling field effect transistors (TFETs)INTEL CORP·Filed 2014·Granted Aug 9, 2016·0 cites·10 claims
- 4756US10109711B2CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channelINTEL CORP·Filed 2013·Granted Oct 23, 2018·0 cites·10 claims
- 4853US9680013B2Non-planar device having uniaxially strained semiconductor body and method of making sameINTEL CORP·Filed 2013·Granted Jun 13, 2017·0 cites·17 claims
- 4950US10128356B2P-tunneling field effect transistor device with pocketINTEL CORP·Filed 2014·Granted Nov 13, 2018·0 cites·20 claims
- 5049US10115822B2Methods of forming low band gap source and drain structures in microelectronic devicesINTEL CORP·Filed 2013·Granted Oct 30, 2018·0 cites·22 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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