Inventor · disambiguated record
Kyoung-Hwan Yeo
Also filed as: YEO KYOUNG-HWAN
33 granted patents·9 pending applications·455 citations·filing 1998–2020
97Inventor score
Top patents by PatentIndex Score
42 records- 0198US9299700B2Semiconductor devices including a dummy gate structure on a finPARK SANG-JINE·Filed 2015·Granted Mar 29, 2016·33 cites·20 claims
- 0297US7670912B2Methods of fabricating multichannel metal oxide semiconductor (MOS) transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 2, 2010·172 cites·18 claims
- 0396US8101475B2Field effect transistor and method for manufacturing the sameOH CHANG-WOO·Filed 2009·Granted Jan 24, 2012·48 cites·15 claims
- 0495US7803675B2Gate-all-around type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·33 cites·12 claims
- 0595US7361545B2Field effect transistor with buried gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·26 cites·12 claims
- 0694US9755079B2Semiconductor devices including insulating gates and methods for fabricating the samePARK SANG-JINE·Filed 2016·Granted Sep 5, 2017·13 cites·8 claims
- 0794US9741854B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·16 cites·20 claims
- 0894US9548309B2Semiconductor devices including a dummy gate structure on a finPARK SANG-JINE·Filed 2016·Granted Jan 17, 2017·10 cites·7 claims
- 0994US8395218B2Gate-all-around type semiconductor device and method of manufacturing the sameSUK SUNG-DAE·Filed 2010·Granted Mar 12, 2013·20 cites·16 claims
- 1090US7605025B2Methods of forming MOSFETS using crystalline sacrificial structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 20, 2009·14 cites·15 claims
- 1189US10566326B2Semiconductor devices including a device isolation region in a substrate and/or finSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 18, 2020·7 cites·14 claims
- 1288US9947672B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 17, 2018·4 cites·8 claims
- 1387US8124961B2Single electron transistorSUK SUNG-DAE·Filed 2011·Granted Feb 28, 2012·10 cites·9 claims
- 1486US10096605B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·3 cites·16 claims
- 1584US10043873B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 7, 2018·5 cites·19 claims
- 1680US7943998B2Nonvolatile memory devices having stacked structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 17, 2011·7 cites·19 claims
- 1780US7429504B2Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 30, 2008·6 cites·16 claims
- 1876US9978746B2Semiconductor devices and methods of manufacturing the sameYEO KYOUNG HWAN·Filed 2016·Granted May 22, 2018·4 cites·20 claims
- 1976US8415210B2Field effect transistor and method for manufacturing the sameOH CHANG-WOO·Filed 2011·Granted Apr 9, 2013·3 cites·21 claims
- 2076US7955932B2Single electron transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 7, 2011·6 cites·20 claims
- 2172US7575964B2Semiconductor device employing buried insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·4 cites·12 claims
- 2266US10943904B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 9, 2021·0 cites·20 claims
- 2366US10854608B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 1, 2020·0 cites·20 claims
- 2466US2008308845A1Heterogeneous Group IV Semiconductor SubstratesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2561US10446561B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 15, 2019·0 cites·20 claims
- 2658US10685960B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 2758US7321144B2Semiconductor device employing buried insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 22, 2008·6 cites·12 claims
- 2856US8008141B2Method of fabricating a semiconductor device with multiple channelsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 30, 2011·0 cites·12 claims
- 2955US8680588B2Field effect transistor with buried gate patternLI MING·Filed 2008·Granted Mar 25, 2014·0 cites·16 claims
- 3055US2010012990A1Mosfets including crystalline sacrificial structuresKIM MIN-SANG·Filed 2009·Application pending·0 cites
- 3151US7579657B2Semiconductor device with multiple channelsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·0 cites·9 claims
- 3251US2008194065A1Integrated circuit devices having an epitaxial pattern with a void region formed therein and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3345US10672890B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 3445US2005280102A1Field effect transistor and method for manufacturing the sameOH CHANG-WOO·Filed 2005·Application pending·0 cites
- 3545US2011189829A1Methods of fabricating nonvolatile memory devices having stacked structuresSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 3644US2019385915A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 3742US10804264B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·20 claims
- 3841US2010109087A1Multichannel Metal Oxide Semiconductor (MOS) TransistorsYEO KYOUNG-HWAN·Filed 2010·Application pending·0 cites
- 3941US2004217434A1Integrated circuit devices having an epitaxial pattern with a void region formed therein and methods of forming the sameFiled 2004·Application pending·0 cites
- 4040US10763156B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·20 claims
- 4136US2010237401A1Gate structures of semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4235US6093653AGas mixture for etching a polysilicon electrode layer and etching method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 25, 2000·5 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →