Heterogeneous Group IV Semiconductor Substrates

Abstract

Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.

1 . A heterogeneous semiconductor substrate, comprising:
 a first Group IV semiconductor layer;   a second Group IV semiconductor pattern that includes a plurality of individual elements on the first Group IV semiconductor layer; and   a third Group IV semiconductor layer having a planarized upper surface on the second Group IV semiconductor pattern and on a plurality of exposed portions of the first Group IV semiconductor layer;   wherein the planarized upper surface of the third Group IV semiconductor layer comprises the upper surface of the heterogeneous semiconductor substrate.   
   
   
       2 . The heterogeneous semiconductor substrate of  claim 1 , wherein the first Group IV semiconductor layer comprises a single crystalline silicon substrate, the second Group IV semiconductor pattern comprises a silicon-germanium epitaxial pattern, and the third Group IV semiconductor layer comprises a silicon epitaxial layer. 
   
   
       3 . The heterogeneous semiconductor substrate of  claim 1 , wherein the first and third Group IV semiconductor layers comprise a first material and the second Group IV semiconductor pattern comprises a second material that has different electrical and chemical properties than the first material. 
   
   
       4 . The heterogeneous semiconductor substrate of  claim 1 , wherein the third Group IV semiconductor layer is directly on the first Group IV semiconductor layer in exposed areas between the individual elements of the second Group IV semiconductor pattern.