Inventor · disambiguated record
Shoichi Yamauchi
Also filed as: YAMAUCHI SHOICHI
35 granted patents·8 pending applications·1,950 citations·filing 1998–2020
97Inventor score
Top patents by PatentIndex Score
43 records- 0199US6191007B1Method for manufacturing a semiconductor substrateDENSO CORP·Filed 1998·Granted Feb 20, 2001·759 cites·50 claims
- 0297US6251754B1Semiconductor substrate manufacturing methodDENSO CORP·Filed 1998·Granted Jun 26, 2001·326 cites·55 claims
- 0396US6495294B1Method for manufacturing semiconductor substrate having an epitaxial film in the trenchDENSO CORP·Filed 2000·Granted Dec 17, 2002·117 cites·38 claims
- 0495US6534380B1Semiconductor substrate and method of manufacturing the sameDENSO CORP·Filed 1998·Granted Mar 18, 2003·471 cites·23 claims
- 0592US7601603B2Method for manufacturing semiconductor deviceDENSO CORP·Filed 2005·Granted Oct 13, 2009·10 cites·18 claims
- 0691US6495883B2Trench gate type semiconductor device and method of manufacturingDENSO CORP·Filed 2002·Granted Dec 17, 2002·62 cites·19 claims
- 0788US7811907B2Method for manufacturing semiconductor device and epitaxial growth equipmentDENSO CORP·Filed 2006·Granted Oct 12, 2010·14 cites·20 claims
- 0887USRE44236EMethod for manufacturing semiconductor deviceYAMAUCHI SHOICHI·Filed 2011·Granted May 21, 2013·4 cites·37 claims
- 0987US7642178B2Semiconductor device, method for manufacturing the same and method for evaluating the sameDENSO CORP·Filed 2006·Granted Jan 5, 2010·13 cites·7 claims
- 1085US7170119B2Vertical type semiconductor deviceDENSO CORP·Filed 2004·Granted Jan 30, 2007·43 cites·6 claims
- 1184US10550040B2Red zirconia sintered body and method for manufacturing the sameTOSOH CORP·Filed 2016·Granted Feb 4, 2020·2 cites·8 claims
- 1284US6836001B2Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trenchDENSO CORP·Filed 2003·Granted Dec 28, 2004·30 cites·1 claims
- 1384US6406982B2Method of improving epitaxially-filled trench by smoothing trench prior to fillingDENSO CORP·Filed 2001·Granted Jun 18, 2002·27 cites·22 claims
- 1481US7417284B2Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2005·Granted Aug 26, 2008·9 cites·3 claims
- 1579US7465990B2Semiconductor device having super junction structureDENSO CORP·Filed 2006·Granted Dec 16, 2008·9 cites·10 claims
- 1676US7553731B2Method of manufacturing semiconductor deviceDENSO CORP·Filed 2007·Granted Jun 30, 2009·6 cites·5 claims
- 1770US7364980B2Manufacturing method of semiconductor substrateSUMCO CORP·Filed 2006·Granted Apr 29, 2008·3 cites·20 claims
- 1868US7633123B2Semiconductor device having super junction structureDENSO CORP·Filed 2006·Granted Dec 15, 2009·4 cites·7 claims
- 1968US7037789B2Stabilization of dopant concentration in semiconductor device having epitaxially-filled trenchDENSO CORP·Filed 2003·Granted May 2, 2006·11 cites·24 claims
- 2066US12319621B2Zirconia sintered body and method for producing sameTOSOH CORP·Filed 2020·Granted Jun 3, 2025·0 cites·15 claims
- 2166US9919971B2Zirconia sintered body and use thereofTOSOH CORP·Filed 2014·Granted Mar 20, 2018·1 cites·14 claims
- 2265US11535565B2Black sintered body and method for producing the sameTOSOH CORP·Filed 2019·Granted Dec 27, 2022·0 cites·14 claims
- 2365US9174877B2Colored translucent zirconia sintered body, its production process and its useYAMAUCHI SHOICHI·Filed 2011·Granted Nov 3, 2015·1 cites·11 claims
- 2465US7342422B2Semiconductor device having super junction structure and method for manufacturing the sameDENSO CORP·Filed 2006·Granted Mar 11, 2008·3 cites·7 claims
- 2565US7342265B2Vertical-type semiconductor device having repetitive-pattern layerDENSO CORP·Filed 2004·Granted Mar 11, 2008·11 cites·2 claims
- 2663US7517771B2Method for manufacturing semiconductor device having trenchDENSO CORP·Filed 2006·Granted Apr 14, 2009·1 cites·21 claims
- 2759US10682831B2Composite plate and method for producing sameTOSOH CORP·Filed 2013·Granted Jun 16, 2020·0 cites·15 claims
- 2859US9034721B2Method for manufacturing semiconductor substrateSUMCO CORP·Filed 2014·Granted May 19, 2015·0 cites·2 claims
- 2959US8956947B2Method for manufacturing semiconductor substrateSUMCO CORP·Filed 2014·Granted Feb 17, 2015·0 cites·9 claims
- 3058US7063751B2Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the cornersDENSO CORP·Filed 2002·Granted Jun 20, 2006·5 cites·5 claims
- 3157US10696022B2Composite plate and production method thereforTOSOH CORP·Filed 2013·Granted Jun 30, 2020·0 cites·12 claims
- 3254US6642577B2Semiconductor device including power MOSFET and peripheral device and method for manufacturing the sameDENSO CORP·Filed 2001·Granted Nov 4, 2003·5 cites·11 claims
- 3351US7026248B2Method for manufacturing semiconductor device with semiconductor region inserted into trenchDENSO CORP·Filed 2003·Granted Apr 11, 2006·3 cites·24 claims
- 3449US2007108444A1Semiconductor substrate and manufacturing method thereofSUMCO CORP AND DENSO CORP·Filed 2006·Application pending·0 cites
- 3549US2009273102A1Semiconductor Substrate and Method for Manufacturing the SameNOGAMI SYOUJI·Filed 2006·Application pending·0 cites
- 3648US8835276B2Method for manufacturing semiconductor substrateNOGAMI SYOUJI·Filed 2010·Granted Sep 16, 2014·0 cites·2 claims
- 3747US2008001261A1Method for manufacturing a semiconductor substrateNOGAMI SYOUJI·Filed 2007·Application pending·0 cites
- 3845US2008211063A1Semiconductor wafer and manufacturing method of semiconductor deviceDENSO CORP·Filed 2008·Application pending·0 cites
- 3943US7776710B2Manufacturing method of semiconductor wafer having a trench structure and epitaxial layerSUMCO CORP·Filed 2005·Granted Aug 17, 2010·0 cites·9 claims
- 4039US2005045996A1Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trenchFiled 2004·Application pending·0 cites
- 4138US2003164534A1Method for manufacturing semiconductor device using two orientation flatsFiled 2003·Application pending·0 cites
- 4236US2001048142A1Semiconductor substrate and method for manufacturing semiconductor device using the sameFiled 2001·Application pending·0 cites
- 4334US2005077572A1Semiconductor device having periodic constructionFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →