Inventor · disambiguated record
Hitoshi Abiko
Also filed as: ABIKO HITOSHI
10 granted patents·4 pending applications·202 citations·filing 1996–2008
90Inventor score
Top patents by PatentIndex Score
14 records- 0184US6544827B2Metal-gate field effect transistor and method for manufacturing the sameNEC CORP·Filed 2001·Granted Apr 8, 2003·34 cites·2 claims
- 0277US5691225AMethod for fabricating semiconductor device having CMOS structureNEC CORP·Filed 1996·Granted Nov 25, 1997·43 cites·15 claims
- 0370US5677233AProcess of fabricating semiconductor device having isolating oxide rising out of grooveNEC CORP·Filed 1996·Granted Oct 14, 1997·42 cites·9 claims
- 0469US5937286AMethod for manufacturing semiconductor deviceNEC CORP·Filed 1998·Granted Aug 10, 1999·38 cites·18 claims
- 0560US6559495B1Semiconductor memory cell deviceNEC ELECTRONICS CORP·Filed 2000·Granted May 6, 2003·7 cites·7 claims
- 0657US6051472ASemiconductor device and method of producing the sameNEC CORP·Filed 1997·Granted Apr 18, 2000·23 cites·3 claims
- 0749US7701026B2Imaging deviceNEC ELECTRONICS CORP·Filed 2007·Granted Apr 20, 2010·0 cites·20 claims
- 0844US2009085124A1Semiconductor storage device and manufacturing method of the sameNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 0943US7719042B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Granted May 18, 2010·0 cites·19 claims
- 1040US6309515B1Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metalNEC CORP·Filed 1998·Granted Oct 30, 2001·8 cites·19 claims
- 1137US6281094B1Method of fabricating semiconductor device capable of providing MOSFET which is improved in a threshold voltage thereofNEC CORP·Filed 1998·Granted Aug 28, 2001·7 cites·11 claims
- 1236US2005205918A1Semiconductor device and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 1336US2003146480A1Metal-gate field effect transistor and method for manufacturing the sameNEC CORP·Filed 2003·Application pending·0 cites
- 1435US2003127679A1Semiconductor storage device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →