Metal-gate field effect transistor and method for manufacturing the same

Abstract

A metal gate MISFET comprises a metal gate electrode on a semiconductor substrate, a side wall insulation film, and a source-drain region which is formed on the surface of the semiconductor substrate on both sides of the side wall insulation film. Then, a cobalt silicide film is formed on the source-drain region. In this step of manufacturing the MISFET, since the cobalt silicide film is sealed with the silicon nitride film at the time of oxidizing the surface of the substrate of a gate portion, the property of the cobalt silicide film will never be deteriorated. As a consequence, the metal-gate field effect transistor having a low parasitic resistance of the source-drain region can be obtained.

What is claimed is:  
     
         1 . A metal-gate field effect transistor comprising: 
 a semiconductor substrate;    a metal-gate electrode on the semiconductor substrate;    a source-drain region formed on the surface of the semiconductor substrate on both sides of the metal-gate electrode; and    a cobalt silicide film formed on the source-drain region.    
     
     
         2 . A metal-gate field effect transistor comprising: 
 a semiconductor substrate;    a metal-gate electrode on the semiconductor substrate;    a source-drain region formed on the surface of the semiconductor substrate on both sides of the metal-gate electrode; and    a conductive film formed of the same material as the metal gate electrode which is formed on the source-drain region.    
     
     
         3 . A method for manufacturing a metal-gate field effect transistor comprising the steps of: 
 forming a source-drain region on a surface of a semiconductor substrate, a dummy gate electrode and a dummy gate insulation film on the semiconductor substrate, and a silicide film on the source-drain region;    forming a sealing film on the silicide film;    removing the dummy gate electrode and the dummy gate insulation film;    subjecting to oxidation the surface of the semiconductor substrate of the gate portion to form a gate oxide film; and    embedding a metal material in the gate portion to form a metal-gate electrode.    
     
     
         4 . A metal-gate field effect transistor according to  claim 3 , wherein the sealing film is formed of silicon nitride.  
     
     
         5 . A method for manufacturing a metal-gate field effect transistor comprising the steps of: 
 forming a source-drain region of the surface of a semiconductor substrate, and a dummy gate electrode and a dummy gate insulation film on the semiconductor substrate;    removing the dummy gate electrode and the dummy gate insulation film;    subjecting to oxidation the surface of the substrate of the gate portion to form a gate oxide film;    depositing a titanium nitride film;    opening a region including at least portion of an area on the source-drain region;    depositing a barrier metal film; and    simultaneously embedding the gate portion and the opening on the source-drain region with metal to form a metal-gate electrode.    
     
     
         6 . A method for manufacturing a metal-gate field effect transistor comprising the steps of: 
 forming a source-drain region of a surface of a semiconductor substrate, and a dummy gate electrode, a dummy gate insulation film and an silicon oxide film on the semiconductor substrate;    forming a first sealing film on the dummy gate electrode;    etching in self-alignment a silicon oxide film on the source-drain region with respect to the gate electrode by using as a mask the side wall insulation film and the sealing film;    embedding an opening on the source-drain region with metal to form a conductive film;    forming a second sealing film on the surface of the conductive film;    exposing the surface of the dummy gate electrode;    removing the dummy gate electrode and the dummy gate insulation film and subjecting to oxidation the surface of the semiconductor substrate of the gate portion thereby forming a gate oxide film and embedding the gate portion to form a metal-gate electrode.    
     
     
         7 . A method for manufacturing the metal-gate field effect transistor according to  claim 6 , wherein the first and the second sealing portions are formed of silicon nitride.