Inventor · disambiguated record
Joon-Seop Kwak
Also filed as: KWAK JOON-SEOP
36 granted patents·17 pending applications·1,379 citations·filing 2001–2023
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20SAMSUNG ELECTRO MECH17KWAK JOON-SEOP7KWANGJU INST SCI & TECH5SAMSUNG LED CO LTD2
Top patents by PatentIndex Score
53 records- 0198US8536604B2Light emitting diode and method for fabricating the sameKWAK JOON-SEOP·Filed 2011·Granted Sep 17, 2013·473 cites·17 claims
- 0298US8399944B2Light emitting diode and method for fabricating the sameKWAK JOON-SEOP·Filed 2003·Granted Mar 19, 2013·486 cites·17 claims
- 0397US8502192B2LED with uniform current spreading and method of fabricationKWAK JOON SEOP·Filed 2011·Granted Aug 6, 2013·136 cites·20 claims
- 0497US6657237B2GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the sameSAMSUNG ELECTRO MECH·Filed 2001·Granted Dec 2, 2003·67 cites·29 claims
- 0593US7491979B2Reflective electrode and compound semiconductor light emitting device including the sameSAMSUNG ELECTRO MECH·Filed 2007·Granted Feb 17, 2009·16 cites·26 claims
- 0690US7973325B2Reflective electrode and compound semiconductor light emitting device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 5, 2011·20 cites·22 claims
- 0789US6551848B2Method for fabricating semiconductor light emitting deviceSAMSUNG ELECTRO MECH·Filed 2002·Granted Apr 22, 2003·75 cites·16 claims
- 0881US8435813B2Light emitting device and method of manufacturing the sameKWAK JOON-SEOP·Filed 2012·Granted May 7, 2013·2 cites·6 claims
- 0979US7521329B2Semiconductor light emitting diode having textured structure and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Apr 21, 2009·6 cites·14 claims
- 1078US7285857B2GaN-based III—V group compound semiconductor device and p-type electrode for the sameKWANGJU INST SCI & TECH·Filed 2004·Granted Oct 23, 2007·22 cites·22 claims
- 1177US8324004B2Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor materialKWAK JOON-SEOP·Filed 2009·Granted Dec 4, 2012·3 cites·5 claims
- 1276US7554125B2Multi-layer electrode and compound semiconductor light emitting device comprising the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Jun 30, 2009·6 cites·28 claims
- 1370US7666693B2Top-emitting nitride-based light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·3 cites·8 claims
- 1470US7095042B2Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 22, 2006·8 cites·8 claims
- 1568US7790486B2Light emitting device and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2006·Granted Sep 7, 2010·2 cites·7 claims
- 1668US7180927B2Semiconductor laser diode and semiconductor laser diode assembly containing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·7 cites·12 claims
- 1767US9887315B2Light emitting diode and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 6, 2018·1 cites·19 claims
- 1864US7417264B2Top-emitting nitride-based light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 26, 2008·11 cites·7 claims
- 1962US7785911B2Semiconductor laser diode with current restricting layer and fabrication method thereofSAMSUNG ELECTRO MECH·Filed 2006·Granted Aug 31, 2010·2 cites·25 claims
- 2061US2025169263A1Micro LED Display Device and Method for Manufacturing Micro LED Display DeviceKOREA INSTITUTE OF ENERGY TECH·Filed 2023·Application pending·0 cites
- 2159US6654398B2Semiconductor laser diode for controlling width of carrier inflow pathSAMSUNG ELECTRO MECH·Filed 2002·Granted Nov 25, 2003·5 cites·10 claims
- 2258US7960746B2Low resistance electrode and compound semiconductor light emitting device including the sameSAMSUNG LED CO LTD·Filed 2004·Granted Jun 14, 2011·6 cites·11 claims
- 2357US6444486B1Semiconductor laser diode including ridge wave guide and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2001·Granted Sep 3, 2002·4 cites·21 claims
- 2457US2013214317A1Nitride semiconductor light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2557US2018138356A1Light emitting diodeSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 2656US2010285622A1Light emitting device and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2010·Application pending·0 cites
- 2756US2007235814A1GaN-based semiconductor light-emitting device and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2007·Application pending·0 cites
- 2855US2013087764A1Gan based group iii-v nitride semiconductor light-emitting diode and method for fabricating the sameSAMSUNG ELECTRO MECH·Filed 2012·Application pending·0 cites
- 2954US8952389B2Light emitting diode and method for fabricating the sameKWAK JOON-SEOP·Filed 2012·Granted Feb 10, 2015·0 cites·33 claims
- 3054US8372672B2Nitride semiconductor light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 12, 2013·0 cites·4 claims
- 3154US7219825B2SnAgAu solder bumps, method of manufacturing the same, and method of bonding light emitting device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 22, 2007·5 cites·19 claims
- 3254US6548319B2Method for manufacturing semiconductor laser diodeSAMSUNG ELECTRO MECH·Filed 2001·Granted Apr 15, 2003·3 cites·8 claims
- 3352US7092420B2Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submountSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 15, 2006·3 cites·5 claims
- 3451US7894499B2Semiconductor laser device with a rounded base mesa structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 22, 2011·2 cites·14 claims
- 3550US6992318B2Semiconductor device having superlattice semiconductor layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·4 cites·10 claims
- 3649US8405109B2Low resistance electrode and compound semiconductor light emitting device including the sameKWAK JOON SEOP·Filed 2011·Granted Mar 26, 2013·0 cites·10 claims
- 3749US7928467B2Nitride semiconductor light emitting device and manufacturing method of the sameSAMSUNG LED CO LTD·Filed 2008·Granted Apr 19, 2011·0 cites·11 claims
- 3849US2007015313A1Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submountSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3949US2005212006A1GaN-based III - V group compound semiconductor light emitting device and method of fabricating the sameKWANGJU INST SCI & TECH·Filed 2004·Application pending·0 cites
- 4049US2006252165A1Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4147US7126165B2Light emitting device assemblySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 24, 2006·1 cites·8 claims
- 4247US2006043388A1Reflective electrode and compound semiconductor light emitting device including the sameKWANGJU INST SCI & TECH·Filed 2005·Application pending·0 cites
- 4345US7115909B2Light emitting device and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2004·Granted Oct 3, 2006·0 cites·2 claims
- 4444US7566578B2GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the sameSAMSUNG ELECTRO MECH·Filed 2003·Granted Jul 28, 2009·0 cites·11 claims
- 4544US7151786B2Semiconductor laser diode with current restricting layer and fabrication method thereofSAMSUNG ELECTRO MECH·Filed 2003·Granted Dec 19, 2006·0 cites·32 claims
- 4641US2004218648A1Laser diode and method of manufacturing the same using self-align processSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 4740US2006109881A1Semiconductor laser diode and method of fabricating the sameSAMSUNG ELECTRO MECH·Filed 2005·Application pending·0 cites
- 4839US2006099806A1Method of forming electrode for compound semiconductor deviceKWANGJU INST SCI & TECH·Filed 2005·Application pending·0 cites
- 4939US2004096997A1Method for manufacturing GaN compound semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Application pending·0 cites
- 5038US2005180475A1Semiconductor laser deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →