Light emitting device and method of manufacturing the same

Abstract

Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

1 . A method of manufacturing a light emitting device, comprising:
 sequentially depositing an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer on a transparent substrate;   exposing a predetermined portion of the n-type compound semiconductor layer by patterning sequentially the p-type compound semiconductor layer and the active layer;   forming an n-type electrode on the exposed region of the n-type compound semiconductor layer;   forming a metal compound film on the patterned p-type compound semiconductor layer;   oxidizing the metal compound film; and   forming a reflective film having a conductivity on the oxidized metal compound film.   
     
     
         2 . The method of  claim 1 , wherein the forming a metal compound comprising:
 forming a photosensitive film pattern for exposing the p-type compound semiconductor layer on the patterned p-type compound semiconductor layer; and   forming a metal compound film contacting the exposed portion of the p-type compound semiconductor layer on the photosensitive film pattern.   
     
     
         3 . The method of  claim 1 , wherein the metal compound film is a lanthanum nickel film. 
     
     
         4 . The method of  claim 1 , wherein the reflective film is made of a material selected from the group consisting of silver (Ag), aluminum (Al), rhodium (Rh), and tin (Sn). 
     
     
         5 . The method of  claim 1 , wherein a resultant in which the reflective film is formed is annealed under a nitrogen atmosphere. 
     
     
         6 . The method of  claim 2 , wherein the metal compound film is a lanthanum nickel film. 
     
     
         7 . A method of manufacturing a light emitting device, comprising:
 a first step, sequentially forming an n-type compound semiconductor layer, an active layer, a p-type compound semiconductor layer, a metal compound oxide film, and a conductive reflection film on a transparent substrate;   a second step, exposing a predetermined portion of the n-type compound semiconductor layer by removing a predetermined portion of the conductive reflection film, the metal compound oxide film, the p-type compound semiconductor layer, and the active layer, sequentially; and   a third step, forming an n-type electrode on the exposed region of the n-type compound semiconductor layer.   
     
     
         8 . The method of  claim 7 , wherein the first step comprises:
 sequentially forming the n-type compound semiconductor layer, the active layer, and the p-type compound semiconductor layer on the transparent substrate;   forming a metal compound film on the p-type compound semiconductor layer;   oxidizing the metal compound film; and   forming the conductive reflection film on the oxidized metal compound film.   
     
     
         9 . The method of  claim 7 , wherein the first step comprises:
 sequentially forming the n-type compound semiconductor layer, the active layer, and the p-type compound semiconductor layer on the transparent substrate;   forming a metal compound film on the p-type compound semiconductor layer;   forming the conductive reflection film on the metal compound film; and   oxidizing the metal compound film.   
     
     
         10 . The method of  claim 7 , wherein the metal compound oxide film is a lanthanum nickel oxide film. 
     
     
         11 . The method of  claim 7 , wherein the conductive reflection film is formed of one selected from the group consisting of silver (Ag), aluminum (Al), rhodium (Rh), and tin (Sn). 
     
     
         12 . The method of  claim 7 , wherein a resultant in which the n-type electrode is formed is annealed under a nitrogen atmosphere. 
     
     
         13 . A method of manufacturing for a light emitting device, comprising:
 sequentially forming an n-type compound semiconductor layer, an active layer, a p-type compound semiconductor layer, a metal compound film, and a conductive reflection film on a transparent substrate;   exposing a predetermined portion of the n-type compound semiconductor layer by removing a predetermined portion of the conductive reflection film, the metal compound film, the p-type compound semiconductor layer, and the active layer; and   oxidizing the metal compound film.   
     
     
         14 . The method of  claim 13 , where after performing one of the exposing a predetermined portion of the n-type compound semiconductor layer and oxidizing the metal compound film, an n-type electrode is formed on the exposed region of the n-type compound semiconductor layer. 
     
     
         15 . The method of  claim 13 , the metal compound film is a lanthanum nickel film. 
     
     
         16 . The method of  claim 13 , where the conductive reflection film is formed of one selected from the group consisting of silver (Ag), aluminum (Al), rhodium (Rh), and tin (Sn). 
     
     
         17 . The method of  claim 13 , where after oxidizing the metal compound film, a resultant in which the oxidized metal compound film is formed is annealed under a nitrogen atmosphere.