Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same

Abstract

A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and comprises a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pa—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode.

1 - 9 . (canceled)  
     
     
         10 . A method of manufacturing a nitride semiconductor light emitting device, comprising: 
 forming an electron injection layer on a transparent substrate; forming an active layer on a first region of the electron injection layer; forming a hole injection layer on the active layer;    forming a metal layer on the hole injection layer;    forming a compound layer comprising N at an interface between the hole injection layer and the metal layer by annealing the transparent substrate on which the metal layer is formed at a predetermined temperature; and    electrically combining a circuit substrate to the metal layer.    
     
     
         11 . The method of  claim 10 , wherein the hole injection layer is composed of p-type GaN.  
     
     
         12 . The method of  claim 11 , wherein the metal layer is composed of Pd.  
     
     
         13 . The method of  claim 12 , wherein the predetermined temperature is about 450° C.  
     
     
         14 . The method of  claim 13 , wherein the annealing is performed for more than 7 minutes.  
     
     
         15 . The method of  claim 10 , wherein the hole injection layer is a layer selected from the group consisting of the p-type material layer and the undoped material layer.  
     
     
         16 . The method of  claim 15 , wherein the hole injection layer is composed of a material selected from the group consisting of n-GaN, GaN, AlGaN, and InGaN.  
     
     
         17 . The method of  claim 10 , wherein the hole injection layer is composed of p-GaN formed by epitaxial growth.  
     
     
         18 . The method of  claim 10 , wherein the metal layer is formed to a thickness of 10˜5,000 Å by an electron beam deposition method.  
     
     
         19 . A method of forming an electrode structure, comprising: 
 forming a semiconductor layer;    forming a metal layer on the semiconductor layer; and    forming a compound layer comprising N, at an interface between the hole injection layer and the metal layer by annealing the transparent substrate on which the metal layer is formed at a predetermined temperature.    
     
     
         20 . The method of  claim 19 , wherein the semiconductor layer is composed of p-type GaN.  
     
     
         21 . The method of  claim 20 , wherein the metal layer is composed of Pd.  
     
     
         22 . The method of  claim 21 , wherein the predetermined temperature is approximately 450° C.  
     
     
         23 . The method of  claim 22 , wherein the annealing is performed for more than 7 minutes.  
     
     
         24 . The method of  claim 20 , wherein the hole injection layer is a layer selected from the group consisting of a p-type material layer and an undoped material layer.  
     
     
         25 . The method of  claim 24 , wherein the hole injection layer is composed of a material selected from the group consisting of n-GaN, GaN, AlGaN, and InGaN.