Inventor · disambiguated record
Fan Chu
Also filed as: CHU FAN
19 granted patents·2 pending applications·217 citations·filing 1999–2023
94Inventor score
Files withCYPRESS SEMICONDUCTOR CORP7FUJITSU LTD5RAMTRON INT CORP4Infineon Technologies LLC2TAYLOR CRAIG1
Top patents by PatentIndex Score
21 records- 0196US9514797B1Hybrid reference generation for ferroelectric random access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 6, 2016·21 cites·20 claims
- 0294US10074422B12T1C ferro-electric random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Sep 11, 2018·25 cites·20 claims
- 0393US9514816B1Non-volatile static RAM and method of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Dec 6, 2016·20 cites·20 claims
- 0484US6887716B2Process for producing high quality PZT films for ferroelectric memory integrated circuitsFUJITSU LTD·Filed 2000·Granted May 3, 2005·34 cites·20 claims
- 0582US6376259B1Method for manufacturing a ferroelectric memory cell including co-annealingRAMTRON INT CORP·Filed 2001·Granted Apr 23, 2002·34 cites·21 claims
- 0675US7313010B2Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 2006·Granted Dec 25, 2007·9 cites·23 claims
- 0772US6627930B1Ferroelectric thin film capacitors having multi-layered crystallographic texturesFUJITSU LTD·Filed 2000·Granted Sep 30, 2003·18 cites·9 claims
- 0867US7116572B2Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 2004·Granted Oct 3, 2006·14 cites·12 claims
- 0967US6287637B1Multi-layer approach for optimizing ferroelectric film performanceRAMTRON INT CORP·Filed 1999·Granted Sep 11, 2001·25 cites·15 claims
- 1065US11978494B2Local reference voltage generator for non-volatile memoryInfineon Technologies LLC·Filed 2023·Granted May 7, 2024·0 cites·20 claims
- 1161US6617626B2Ferroelectric semiconductor memory device and a fabrication process thereofFUJITSU LTD·Filed 2001·Granted Sep 9, 2003·7 cites·6 claims
- 1260US6964873B2Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFUJITSU LTD·Filed 2000·Granted Nov 15, 2005·7 cites·1 claims
- 1356US11587603B2Local reference voltage generator for non-volatile memoryInfineon Technologies LLC·Filed 2020·Granted Feb 21, 2023·0 cites·14 claims
- 1456US8963343B1Ferroelectric memories with a stress bufferCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Feb 24, 2015·1 cites·15 claims
- 1554US10304731B2Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted May 28, 2019·0 cites·17 claims
- 1652US2015206893A1Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2014·Application pending·0 cites
- 1746US10332596B22T1C ferro-electric random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Jun 25, 2019·0 cites·20 claims
- 1846US6777287B2Ferroelectric semiconductor memory device and a fabrication process thereofFUJITSU LTD·Filed 2003·Granted Aug 17, 2004·1 cites·14 claims
- 1945US11860385B2Tunable liquid crystal grating-based holographic true 3D display system and methodUNIV BEIHANG·Filed 2021·Granted Jan 2, 2024·0 cites·2 claims
- 2043US8081500B2Method for mitigating imprint in a ferroelectric memoryTAYLOR CRAIG·Filed 2009·Granted Dec 20, 2011·1 cites·7 claims
- 2136US2002142489A1Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →