Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memory

Abstract

Disclosed herein is an apparatus that includes a ferrocapacitor disposed on a damascene barrier film. The damascene barrier film includes a hydrogen barrier region and an oxygen barrier region, with each being in contact with a bottom surface of the ferrocapacitor.

What is claimed is: 
     
         1 . An apparatus comprising:
 a damascene barrier film having a first upper surface and a first lower surface, the damascene barrier film comprising a hydrogen barrier region and a first oxygen barrier region;   a ferrocapacitor disposed on the first upper surface of the damascene barrier film, the ferrocapacitor having a top surface, a bottom surface, and at least one sidewall, wherein the bottom surface of the ferrocapacitor is in contact the first oxygen barrier region; and   a hydrogen barrier film disposed along the at least one sidewall of the ferrocapacitor and at least a first portion of the top surface of the ferrocapacitor.   
     
     
         2 . The apparatus of  claim 1 , wherein:
 the hydrogen barrier region has a second upper surface and a second lower surface, and   the first oxygen barrier region has a third upper surface and a third lower surface, wherein the second upper surface of the hydrogen barrier region and the third upper surface of the oxygen barrier region collectively define the first upper surface of the damascene barrier film, and wherein the second lower surface of the hydrogen barrier region and the third lower surface of the oxygen barrier region collectively define the lower surface of the damascene barrier film.   
     
     
         3 . The apparatus of  claim 2 , wherein a second portion of the bottom surface of the ferrocapacitor is in contact at least partially with the second upper surface of the hydrogen barrier region, and wherein a fourth portion of the bottom surface of the ferrocapacitor is in contact at least partially with the third upper surface of the oxygen barrier region. 
     
     
         4 . The apparatus of  claim 2 , wherein the bottom surface of the ferrocapacitor is in contact with the third upper surface of the oxygen barrier region without contacting the second upper surface of the hydrogen barrier region. 
     
     
         5 . The apparatus of  claim 1 , wherein the damascene barrier film further comprises a second oxygen barrier region, wherein the second oxygen barrier region electrically couples an upper metal contact disposed above the damascene barrier film to a lower metal contact disposed below the damascene barrier film. 
     
     
         6 . The apparatus of  claim 1 , wherein hydrogen barrier film is further disposed along the first upper surface of the damascene barrier film. 
     
     
         7 . The apparatus of  claim 1 , wherein the first oxygen barrier region electrically couples the ferrocapacitor to an underlying gate level layer. 
     
     
         8 . The apparatus of  claim 1 , wherein the damascene barrier film is formed in an oxide layer, and wherein the hydrogen barrier region comprises the oxide layer. 
     
     
         9 . The apparatus of  claim 1 , wherein the hydrogen barrier region of the damascene barrier film comprises two or more hydrogen barrier layers. 
     
     
         10 . The apparatus of  claim 1 , wherein the hydrogen barrier region comprises at least one of aluminum oxide or silicon nitride, and wherein the first oxygen barrier region comprises titanium aluminum nitride. 
     
     
         11 . The apparatus of  claim 1 , wherein a height of the ferrocapacitor ranges from 0.2 micrometers to 0.5 micrometers. 
     
     
         12 . The apparatus of  claim 1 , wherein:
 the damascene barrier film comprises at least one additional oxygen barrier region,   the damascene barrier film defines a local interconnect layer that comprises at least one local interconnect, and   the at least one local interconnect comprises the at least one additional oxygen barrier region.   
     
     
         13 . A method comprising:
 forming a damascene barrier film disposed above a gate level layer, the damascene barrier film comprising a hydrogen barrier region and a first oxygen barrier region; and   forming a ferrocapacitor on the damascene barrier film, wherein a bottom surface of the ferrocapacitor contacts the first oxygen barrier region.   
     
     
         14 . The method of  claim 13 , further comprising:
 forming a hydrogen barrier film above the ferrocapacitor and the damascene barrier film, wherein the ferrocapacitor is encapsulated between the hydrogen barrier film and the damascene barrier film.   
     
     
         15 . The method of  claim 13 , wherein the damascene barrier film further comprises a second oxygen barrier region, wherein the second oxygen barrier region electrically couples an upper metal contact disposed above the damascene barrier film to a lower metal contact disposed within the gate level layer. 
     
     
         16 . The method of  claim 13 , wherein the damascene barrier film is formed in an oxide layer of the gate level layer, and wherein the hydrogen barrier region comprises the oxide layer. 
     
     
         17 . The method of  claim 13 , wherein the hydrogen barrier region of the damascene barrier film comprises two or more hydrogen barrier layers. 
     
     
         18 . The method of  claim 13 , wherein a height of the ferrocapacitor ranges from 0.2 micrometers to 0.5 micrometers. 
     
     
         19 . The method of  claim 13 , wherein:
 the damascene barrier film comprises at least one additional oxygen barrier region,   the damascene barrier film defines a local interconnect layer that comprises at least one local interconnect, and   the at least one local interconnect includes the at least one additional oxygen barrier region.   
     
     
         20 . An apparatus comprising:
 a ferroelectric random-access memory (FRAM), the FRAM comprising:
 a damascene barrier film having a first upper surface and a first lower surface, the damascene barrier film comprising a hydrogen barrier region and a first oxygen barrier region; 
 a ferrocapacitor disposed on the first upper surface of the damascene barrier film, the ferrocapacitor having a top surface, a bottom surface, and at least one sidewall, wherein the bottom surface of the ferrocapacitor is in contact with the first oxygen barrier region; and 
 a hydrogen barrier film disposed along the at least one sidewall of the ferrocapacitor and at least a portion of the top surface of the ferrocapacitor.