Assignee
RAMTRON INT CORP
US·132 granted patents·6,354 citations·filing 1989–2012
Top patents by PatentIndex Score
132 records- 0197US6894549B2Ferroelectric non-volatile logic elementsRAMTRON INT CORP·Filed 2003·Granted May 17, 2005·438 cites·5 claims
- 0296US6249014B1Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devicesRAMTRON INT CORP·Filed 1998·Granted Jun 19, 2001·201 cites·29 claims
- 0396US5699317AEnhanced DRAM with all reads from on-chip cache and all writers to memory arrayRAMTRON INT CORP·Filed 1994·Granted Dec 16, 1997·189 cites·18 claims
- 0495US5721862AEnhanced DRAM with single row SRAM cache for all device read operationsRAMTRON INT CORP·Filed 1995·Granted Feb 24, 1998·117 cites·36 claims
- 0594US6172927B1First-in, first-out integrated circuit memory device incorporating a retransmit functionRAMTRON INT CORP·Filed 2000·Granted Jan 9, 2001·121 cites·38 claims
- 0694US6150184AMethod of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitorRAMTRON INT CORP·Filed 2000·Granted Nov 21, 2000·85 cites·12 claims
- 0794US5293510ASemiconductor device with ferroelectric and method of manufacturing the sameRAMTRON INT CORP·Filed 1991·Granted Mar 8, 1994·140 cites·9 claims
- 0893US6613586B2Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devicesRAMTRON INT CORP·Filed 2001·Granted Sep 2, 2003·74 cites·14 claims
- 0993US6252793B1Reference cell configuration for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 2000·Granted Jun 26, 2001·59 cites·1 claims
- 1093US5475248ASemiconductor device with a conductive reaction-preventing filmRAMTRON INT CORP·Filed 1994·Granted Dec 12, 1995·104 cites·15 claims
- 1192US6459609B1Self referencing 1T/1C ferroelectric random access memoryRAMTRON INT CORP·Filed 2001·Granted Oct 1, 2002·77 cites·22 claims
- 1292US5610099AProcess for fabricating transistors using composite nitride structureRAMTRON INT CORP·Filed 1994·Granted Mar 11, 1997·101 cites·11 claims
- 1392US5580814AMethod for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistorRAMTRON INT CORP·Filed 1995·Granted Dec 3, 1996·89 cites·21 claims
- 1492US5434572ASystem and method for initiating communications between a controller and a selected subset of multiple transponders in a common RF fieldRAMTRON INT CORP·Filed 1994·Granted Jul 18, 1995·162 cites·29 claims
- 1592US5191510AUse of palladium as an adhesion layer and as an electrode in ferroelectric memory devicesRAMTRON INT CORP·Filed 1992·Granted Mar 2, 1993·141 cites·26 claims
- 1691US6281023B2Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layerRAMTRON INT CORP·Filed 2001·Granted Aug 28, 2001·59 cites·9 claims
- 1791US5572459AVoltage reference for a ferroelectric 1T/1C based memoryRAMTRON INT CORP·Filed 1994·Granted Nov 5, 1996·108 cites·18 claims
- 1891US5394367ASystem and method for write-protecting predetermined portions of a memory arrayRAMTRON INT CORP·Filed 1994·Granted Feb 28, 1995·112 cites·21 claims
- 1991US5216572AStructure and method for increasing the dielectric constant of integrated ferroelectric capacitorsRAMTRON INT CORP·Filed 1992·Granted Jun 1, 1993·95 cites·21 claims
- 2090US6141237AFerroelectric non-volatile latch circuitsRAMTRON INT CORP·Filed 1999·Granted Oct 31, 2000·87 cites·29 claims
- 2190US5608246AIntegration of high value capacitor with ferroelectric memoryRAMTRON INT CORP·Filed 1995·Granted Mar 4, 1997·82 cites·11 claims
- 2290US5381364AFerroelectric-based RAM sensing scheme including bit-line capacitance isolationRAMTRON INT CORP·Filed 1993·Granted Jan 10, 1995·137 cites·27 claims
- 2389US6423592B1PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitorRAMTRON INT CORP·Filed 2001·Granted Jul 23, 2002·49 cites·23 claims
- 2489US6028783AMemory cell configuration for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 1997·Granted Feb 22, 2000·57 cites·20 claims
- 2589US5864932APartially or completely encapsulated top electrode of a ferroelectric capacitorRAMTRON INT CORP·Filed 1996·Granted Feb 2, 1999·66 cites·10 claims
- 2689US5519566AMethod of manufacturing ferroelectric bismuth layered oxidesRAMTRON INT CORP·Filed 1995·Granted May 21, 1996·78 cites·20 claims
- 2789US5426075AMethod of manufacturing ferroelectric bismuth layered oxidesRAMTRON INT CORP·Filed 1994·Granted Jun 20, 1995·73 cites·20 claims
- 2888US5889428ALow loss, regulated charge pump with integrated ferroelectric capacitorsRAMTRON INT CORP·Filed 1995·Granted Mar 30, 1999·120 cites·22 claims
- 2988US5479132ANoise and glitch suppressing filter with feedbackRAMTRON INT CORP·Filed 1994·Granted Dec 26, 1995·54 cites·28 claims
- 3087US6495413B2Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuitsRAMTRON INT CORP·Filed 2001·Granted Dec 17, 2002·49 cites·11 claims
- 3187US5530668AFerroelectric memory sensing scheme using bit lines precharged to a logic one voltageRAMTRON INT CORP·Filed 1995·Granted Jun 25, 1996·71 cites·12 claims
- 3287US5525528AFerroelectric capacitor renewal methodRAMTRON INT CORP·Filed 1994·Granted Jun 11, 1996·65 cites·26 claims
- 3386US6650158B2Ferroelectric non-volatile logic elementsRAMTRON INT CORP·Filed 2002·Granted Nov 18, 2003·28 cites·16 claims
- 3485US6090443AMulti-layer approach for optimizing ferroelectric film performanceRAMTRON INT CORP·Filed 1998·Granted Jul 18, 2000·56 cites·21 claims
- 3585US5598366AFerroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment driversRAMTRON INT CORP·Filed 1995·Granted Jan 28, 1997·62 cites·20 claims
- 3685US5495117AStacked ferroelectric memory cellRAMTRON INT CORP·Filed 1994·Granted Feb 27, 1996·53 cites·34 claims
- 3785US5438023APassivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the likeRAMTRON INT CORP·Filed 1994·Granted Aug 1, 1995·73 cites·11 claims
- 3884US6242299B1Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrodeRAMTRON INT CORP·Filed 1999·Granted Jun 5, 2001·93 cites·20 claims
- 3984US6201726B1Ferroelectric memory device structure useful for preventing hydrogen line degradationRAMTRON INT CORP·Filed 2000·Granted Mar 13, 2001·29 cites·7 claims
- 4084US5867047ABandgap reference based power-on detect circuit including a suppression circuitRAMTRON INT CORP·Filed 1998·Granted Feb 2, 1999·37 cites·11 claims
- 4183US6008659AMethod of measuring retention performance and imprint degradation of ferroelectric filmsRAMTRON INT CORP·Filed 1996·Granted Dec 28, 1999·59 cites·20 claims
- 4283US5909624AMethod of making integration of high value capacitor with ferroelectric memoryRAMTRON INT CORP·Filed 1995·Granted Jun 1, 1999·51 cites·13 claims
- 4383US5890199AData processor incorporating a ferroelectric memory array selectably configurable as read/write and read only memoryRAMTRON INT CORP·Filed 1996·Granted Mar 30, 1999·62 cites·57 claims
- 4482US6560137B2Sense amplifier configuration for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 2001·Granted May 6, 2003·24 cites·1 claims
- 4582US6538914B1Ferroelectric memory with bit-plate parallel architecture and operating method thereofRAMTRON INT CORP·Filed 2002·Granted Mar 25, 2003·78 cites·11 claims
- 4682US6376259B1Method for manufacturing a ferroelectric memory cell including co-annealingRAMTRON INT CORP·Filed 2001·Granted Apr 23, 2002·34 cites·21 claims
- 4782US6027947APartially or completely encapsulated top electrode of a ferroelectric capacitorRAMTRON INT CORP·Filed 1997·Granted Feb 22, 2000·45 cites·8 claims
- 4882US5880989ASensing methodology for a 1T/1C ferroelectric memoryRAMTRON INT CORP·Filed 1997·Granted Mar 9, 1999·51 cites·20 claims
- 4982US5852376ABandgap reference based power-on detect circuit including a supression circuitRAMTRON INT CORP·Filed 1996·Granted Dec 22, 1998·36 cites·9 claims
- 5081US7924599B1Non-volatile memory circuit using ferroelectric capacitor storage elementRAMTRON INT CORP·Filed 1989·Granted Apr 12, 2011·28 cites·38 claims
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