Inventor · disambiguated record
Deepika Priyadarshini
Also filed as: PRIYADARSHINI DEEPIKA
59 granted patents·4 pending applications·1,037 citations·filing 2012–2023
98Inventor score
Top patents by PatentIndex Score
63 records- 0199US9305836B1Air gap semiconductor structure with selective cap bilayerIBM·Filed 2014·Granted Apr 5, 2016·488 cites·10 claims
- 0298US9947579B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Apr 17, 2018·15 cites·8 claims
- 0398US9786760B1Air gap and air spacer pinch offIBM·Filed 2016·Granted Oct 10, 2017·22 cites·7 claims
- 0498US9620481B2Substrate bonding with diffusion barrier structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 11, 2017·220 cites·16 claims
- 0598US9601371B2Interconnect structure with barrier layerIBM·Filed 2015·Granted Mar 21, 2017·16 cites·15 claims
- 0698US9349687B1Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnectIBM·Filed 2015·Granted May 24, 2016·96 cites·20 claims
- 0797US10224241B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Mar 5, 2019·9 cites·20 claims
- 0897US9947581B2Method of forming a copper based interconnect structureIBM·Filed 2016·Granted Apr 17, 2018·10 cites·17 claims
- 0997US9455182B2Interconnect structure with capping layer and barrier layerIBM·Filed 2014·Granted Sep 27, 2016·18 cites·20 claims
- 1096US10325806B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Jun 18, 2019·9 cites·11 claims
- 1196US9064937B2Substrate bonding with diffusion barrier structuresIBM·Filed 2013·Granted Jun 23, 2015·29 cites·11 claims
- 1294US9793193B1Air gap and air spacer pinch offIBM·Filed 2016·Granted Oct 17, 2017·7 cites·7 claims
- 1393US10593591B2Interconnect structureTESSERA INC·Filed 2018·Granted Mar 17, 2020·4 cites·16 claims
- 1492US9435031B2Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the sameIBM·Filed 2014·Granted Sep 6, 2016·4 cites·9 claims
- 1592US8981466B2Multilayer dielectric structures for semiconductor nano-devicesIBM·Filed 2013·Granted Mar 17, 2015·13 cites·15 claims
- 1691US9711455B2Method of forming an air gap semiconductor structure with selective cap bilayerIBM·Filed 2015·Granted Jul 18, 2017·5 cites·12 claims
- 1791US9028628B2Wafer-to-wafer oxide fusion bondingIBM·Filed 2013·Granted May 12, 2015·12 cites·10 claims
- 1890US10242933B2Air gap and air spacer pinch offIBM·Filed 2017·Granted Mar 26, 2019·4 cites·20 claims
- 1989US9431235B1Multilayer dielectric structures with graded composition for nano-scale semiconductor devicesIBM·Filed 2015·Granted Aug 30, 2016·5 cites·15 claims
- 2088US9960117B2Air gap semiconductor structure with selective cap bilayerIBM·Filed 2015·Granted May 1, 2018·4 cites·18 claims
- 2188US9312224B1Interconnect structure containing a porous low k interconnect dielectric/dielectric capIBM·Filed 2014·Granted Apr 12, 2016·9 cites·21 claims
- 2288US8980715B2Multilayer dielectric structures for semiconductor nano-devicesIBM·Filed 2013·Granted Mar 17, 2015·8 cites·19 claims
- 2387US9934963B2Multilayer dielectric structures with graded composition for nano-scale semiconductor devicesIBM·Filed 2016·Granted Apr 3, 2018·4 cites·19 claims
- 2487US9558934B2Hydrogen-free silicon-based deposited dielectric films for nano device fabricationIBM·Filed 2015·Granted Jan 31, 2017·3 cites·7 claims
- 2586US9209017B2Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursorsIBM·Filed 2014·Granted Dec 8, 2015·5 cites·20 claims
- 2686US2024006237A1Method of forming copper interconnect structure with manganese barrier layerADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Application pending·0 cites
- 2784US10192829B2Low-temperature diffusion doping of copper interconnects independent of seed layer compositionIBM·Filed 2017·Granted Jan 29, 2019·3 cites·12 claims
- 2884US9711507B1Separate N and P fin etching for reduced CMOS device leakageIBM·Filed 2016·Granted Jul 18, 2017·3 cites·14 claims
- 2983US9754891B2Low-temperature diffusion doping of copper interconnects independent of seed layer compositionIBM·Filed 2015·Granted Sep 5, 2017·3 cites·18 claims
- 3082US9735005B1Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devicesIBM·Filed 2016·Granted Aug 15, 2017·2 cites·9 claims
- 3181US11186911B2Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the sameIBM·Filed 2019·Granted Nov 30, 2021·0 cites·18 claims
- 3281US11066748B2Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the sameIBM·Filed 2019·Granted Jul 20, 2021·0 cites·15 claims
- 3380US11804405B2Method of forming copper interconnect structure with manganese barrier layerTESSERA LLC·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 3477US9711456B2Composite manganese nitride/low-K dielectric capIBM·Filed 2015·Granted Jul 18, 2017·2 cites·13 claims
- 3576US11232983B2Copper interconnect structure with manganese barrier layerTESSERA INC·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 3676US9412629B2Wafer bonding for 3D device packaging fabricationGLOBALFOUNDRIES INC·Filed 2012·Granted Aug 9, 2016·4 cites·12 claims
- 3771US10428428B2Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the sameIBM·Filed 2016·Granted Oct 1, 2019·0 cites·12 claims
- 3871US10224283B2Composite manganese nitride / low-k dielectric capIBM·Filed 2017·Granted Mar 5, 2019·1 cites·20 claims
- 3970US10770347B2Interconnect structureTESSERA INC·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 4063US10580740B2Low-temperature diffusion doping of copper interconnects independent of seed layer compositionIBM·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 4162US2019172704A1ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICESIBM·Filed 2019·Application pending·0 cites
- 4261US10366940B2Air gap and air spacer pinch offIBM·Filed 2017·Granted Jul 30, 2019·0 cites·10 claims
- 4360US10256171B2Air gap and air spacer pinch offIBM·Filed 2017·Granted Apr 9, 2019·0 cites·7 claims
- 4460US10242865B2Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devicesIBM·Filed 2017·Granted Mar 26, 2019·0 cites·9 claims
- 4560US10236176B2Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devicesIBM·Filed 2017·Granted Mar 19, 2019·0 cites·20 claims
- 4660US10177076B2Air gap and air spacer pinch offIBM·Filed 2017·Granted Jan 8, 2019·0 cites·19 claims
- 4760US9607825B2Hydrogen-free silicon-based deposited dielectric films for nano device fabricationIBM·Filed 2014·Granted Mar 28, 2017·0 cites·7 claims
- 4858US11043494B2Structure and method for equal substrate to channel height between N and P fin-FETsIBM·Filed 2019·Granted Jun 22, 2021·0 cites·19 claims
- 4958US9558935B2Hydrogen-free silicon-based deposited dielectric films for nano device fabricationIBM·Filed 2015·Granted Jan 31, 2017·0 cites·5 claims
- 5058US9536733B2Hydrogen-free silicon-based deposited dielectric films for nano device fabricationIBM·Filed 2015·Granted Jan 3, 2017·0 cites·6 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →