Inventor · disambiguated record
Takashi Ichimori
Also filed as: ICHIMORI TAKASHI
10 granted patents·4 pending applications·51 citations·filing 2000–2012
86Inventor score
Top patents by PatentIndex Score
14 records- 0171US6531743B1SOI MOS field effect transistor and manufacturing method thereforOKI ELECTRIC IND CO LTD·Filed 2002·Granted Mar 11, 2003·15 cites·10 claims
- 0266US6274470B1Method for fabricating a semiconductor device having a metallic silicide layerOKI ELECTRIC IND CO LTD·Filed 2000·Granted Aug 14, 2001·14 cites·8 claims
- 0365US8917929B2Image processing apparatus, method, program, and recording mediumICHIMORI TAKASHI·Filed 2011·Granted Dec 23, 2014·3 cites·19 claims
- 0464US6750088B2SOI MOS field effect transistor and manufacturing method thereforOKI ELECTRIC IND CO LTD·Filed 2003·Granted Jun 15, 2004·10 cites·4 claims
- 0559US7405439B2Memory cell structure and semiconductor memory deviceOKI ELECTRIC IND CO LTD·Filed 2006·Granted Jul 29, 2008·2 cites·15 claims
- 0653US6861322B2Method of manufacturing a semiconductor deviceOKI ELECTRIC IND CO LTD·Filed 2002·Granted Mar 1, 2005·4 cites·8 claims
- 0747US7479682B2Structure of a field effect transistor having metallic silicide and manufacturing method thereofOKI ELECTRIC IND CO LTD·Filed 2007·Granted Jan 20, 2009·0 cites·10 claims
- 0847US7244996B2Structure of a field effect transistor having metallic silicide and manufacturing method thereofOKI ELECTRIC IND CO LTD·Filed 2001·Granted Jul 17, 2007·3 cites·14 claims
- 0945US2011223724A1Semiconductor device having low parasitic resistance and small junction leakage characteristic and method of manufacturing the sameOKI SEMICONDUCTOR CO LTD·Filed 2011·Application pending·0 cites
- 1043US2006145271A1Semiconductor device having low parasitic resistance and small junction leakage characteristicICHIMORI TAKASHI·Filed 2006·Application pending·0 cites
- 1138US9407305B2Instruction beam detection apparatus and method of detecting instruction beamICHIMORI TAKASHI·Filed 2012·Granted Aug 2, 2016·0 cites·8 claims
- 1236US2006054949A1Ferroelectric memory and method of manufacturing sameICHIMORI TAKASHI·Filed 2005·Application pending·0 cites
- 1336US2004238862A1Ferroelectrics device and method of manufacturing the sameFiled 2003·Application pending·0 cites
- 1434US8183643B2Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon planeICHIMORI TAKASHI·Filed 2001·Granted May 22, 2012·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →