Inventor · disambiguated record
Norio Hirashita
Also filed as: HIRASHITA NORIO
12 granted patents·2 pending applications·164 citations·filing 1990–2011
90Inventor score
Top patents by PatentIndex Score
14 records- 0196US7759228B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jul 20, 2010·53 cites·11 claims
- 0274US6037588AMethod for testing semiconductor deviceOKI ELECTRIC IND CO LTD·Filed 1998·Granted Mar 14, 2000·46 cites·20 claims
- 0371US6531743B1SOI MOS field effect transistor and manufacturing method thereforOKI ELECTRIC IND CO LTD·Filed 2002·Granted Mar 11, 2003·15 cites·10 claims
- 0466US6274470B1Method for fabricating a semiconductor device having a metallic silicide layerOKI ELECTRIC IND CO LTD·Filed 2000·Granted Aug 14, 2001·14 cites·8 claims
- 0564US6750088B2SOI MOS field effect transistor and manufacturing method thereforOKI ELECTRIC IND CO LTD·Filed 2003·Granted Jun 15, 2004·10 cites·4 claims
- 0653US6861322B2Method of manufacturing a semiconductor deviceOKI ELECTRIC IND CO LTD·Filed 2002·Granted Mar 1, 2005·4 cites·8 claims
- 0747US7479682B2Structure of a field effect transistor having metallic silicide and manufacturing method thereofOKI ELECTRIC IND CO LTD·Filed 2007·Granted Jan 20, 2009·0 cites·10 claims
- 0847US7244996B2Structure of a field effect transistor having metallic silicide and manufacturing method thereofOKI ELECTRIC IND CO LTD·Filed 2001·Granted Jul 17, 2007·3 cites·14 claims
- 0945US2011223724A1Semiconductor device having low parasitic resistance and small junction leakage characteristic and method of manufacturing the sameOKI SEMICONDUCTOR CO LTD·Filed 2011·Application pending·0 cites
- 1043US2006145271A1Semiconductor device having low parasitic resistance and small junction leakage characteristicICHIMORI TAKASHI·Filed 2006·Application pending·0 cites
- 1138US5288948AStructure of a semiconductor chip having a conductive layerOKI ELECTRIC IND CO LTD·Filed 1990·Granted Feb 22, 1994·13 cites·20 claims
- 1237US7199030B2Method of manufacturing semiconductor deviceOKI ELECTRIC IND CO LTD·Filed 2003·Granted Apr 3, 2007·0 cites·4 claims
- 1336US6197601B1Method of correcting temperature of semiconductor substrateOKI ELECTRIC IND CO LTD·Filed 1999·Granted Mar 6, 2001·6 cites·13 claims
- 1434US8183643B2Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon planeICHIMORI TAKASHI·Filed 2001·Granted May 22, 2012·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →