Inventor · disambiguated record
Jeong-Sic Jeon
Also filed as: JEON JEONG-SIC
27 granted patents·7 pending applications·209 citations·filing 2001–2011
96Inventor score
Top patents by PatentIndex Score
34 records- 0192US7053435B2Electronic devices including electrodes with insulating spacers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·57 cites·5 claims
- 0284US7314795B2Methods of forming electronic devices including electrodes with insulating spacers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 1, 2008·8 cites·39 claims
- 0379US7851354B2Semiconductor memory device having local etch stopper and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 14, 2010·6 cites·13 claims
- 0475US7172971B2Semiconductor device having a contact window including a lower with a wider to provide a lower contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 6, 2007·3 cites·3 claims
- 0572US6607954B2Methods of fabricating cylinder-type capacitors for semiconductor devices using a hard mask and a mold layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 19, 2003·20 cites·20 claims
- 0671US7648875B2Methods for forming DRAM devices including protective patterns and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 19, 2010·6 cites·6 claims
- 0771US7462899B2Semiconductor memory device having local etch stopper and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 9, 2008·5 cites·14 claims
- 0868US6764955B2Semiconductor device having a contact window and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 20, 2004·8 cites·12 claims
- 0967US7098135B2Semiconductor device including bit line formed using damascene technique and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 29, 2006·9 cites·11 claims
- 1066US6350642B1Method of manufacturing semiconductor memory device including various contact studsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 26, 2002·17 cites·20 claims
- 1165US6333219B1Method for forming a polysilicon node in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 25, 2001·14 cites·12 claims
- 1262US6479399B2Method of forming interlevel dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 12, 2002·8 cites·14 claims
- 1361US7888725B2Electronic devices including electrode walls with insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·1 cites·17 claims
- 1461US6404055B1Semiconductor device with improved metal interconnection and method for forming the metal interconnectionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 11, 2002·8 cites·17 claims
- 1560US6753221B2Methods for fabricating semiconductor devices having capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 22, 2004·7 cites·25 claims
- 1659US6919640B2Semiconductor device having a contact window including a lower region with a wider width to provide a lower contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 19, 2005·4 cites·8 claims
- 1758US6548388B2Semiconductor device including gate electrode having damascene structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 15, 2003·9 cites·18 claims
- 1857US7001817B2Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·7 cites·20 claims
- 1955US7052952B2Method for forming wire line by damascene process using hard mask formed from contactsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·7 cites·23 claims
- 2052US7491601B2Methods of forming electronic devices including electrodes with insulating spacers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·0 cites·22 claims
- 2152US2008064206A1Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2250US6833050B2Apparatus for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 21, 2004·1 cites·13 claims
- 2350US2006284277A1Semiconductor device including bit line formed using damascene technique and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2449US7312121B2Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 25, 2007·0 cites·10 claims
- 2547US7442272B2Apparatus for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 28, 2008·0 cites·19 claims
- 2647US7326621B2Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrateSAMSUG ELECTRONICS CO LTD·Filed 2004·Granted Feb 5, 2008·4 cites·24 claims
- 2744US7888724B2Capacitors for semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 15, 2011·0 cites·17 claims
- 2843US6927127B2Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 9, 2005·0 cites·9 claims
- 2941US2002093105A1Semiconductor device having a contact window and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
- 3039US8394697B2Methods of forming capacitors for semiconductor memory devicesHONG JONG-SEO·Filed 2011·Granted Mar 12, 2013·0 cites·20 claims
- 3139US2005042837A1Method of controlling depth of trench in shallow trench isolation and method of forming trench for isolation using the sameFiled 2004·Application pending·0 cites
- 3239US2002109229A1Semiconductor device with improved metal interconnection and method for forming the metal interconnectionFiled 2002·Application pending·0 cites
- 3338US2004200244A1Remote plasma enhanced cleaning apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3435US2002090808A1Method of manufacturing a self-aligned contact from a conductive layer that is free of voidsFiled 2001·Application pending·0 cites
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