Inventor · disambiguated record
Jeremy A. Wahl
Also filed as: WAHL JEREMY · WAHL JEREMY A · WAHL JEREMY AUSTIN
24 granted patents·4 pending applications·213 citations·filing 2008–2019
95Inventor score
Files withGLOBALFOUNDRIES INC20LICAUSI NICHOLAS2WAHL JEREMY A2KIM EUNHA1PLASTIC OMNIUM ADVANCED INNOVATION & RES1
Top patents by PatentIndex Score
28 records- 0197US8691640B1Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant materialGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 8, 2014·33 cites·19 claims
- 0295US8481410B1Methods of epitaxial FinFETLICAUSI NICHOLAS·Filed 2012·Granted Jul 9, 2013·40 cites·20 claims
- 0395US8476137B1Methods of FinFET height controlLICAUSI NICHOLAS·Filed 2012·Granted Jul 2, 2013·40 cites·23 claims
- 0493US9634143B1Methods of forming FinFET devices with substantially undoped channel regionsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·11 cites·27 claims
- 0593US9508712B2Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulationGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 29, 2016·17 cites·18 claims
- 0691US8460984B2FIN-FET device and method and integrated circuits using suchWAHL JEREMY·Filed 2011·Granted Jun 11, 2013·23 cites·17 claims
- 0790US9660075B2Integrated circuits with dual silicide contacts and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2016·Granted May 23, 2017·5 cites·19 claims
- 0885US8759904B2Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrateWAHL JEREMY A·Filed 2011·Granted Jun 24, 2014·10 cites·17 claims
- 0984US8853019B1Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal processGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 7, 2014·7 cites·34 claims
- 1083US10049944B2Method of manufacturing selective nanostructures into finFET process flowGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 14, 2018·4 cites·8 claims
- 1182US10707119B1Interconnect structures with airgaps and dielectric-capped interconnectsGLOBALFOUNDRIES INC·Filed 2019·Granted Jul 7, 2020·3 cites·14 claims
- 1282US9196694B2Integrated circuits with dual silicide contacts and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 24, 2015·5 cites·16 claims
- 1382US8906802B2Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly processGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 9, 2014·5 cites·12 claims
- 1479US9875936B1Spacer defined fin growth and differential fin widthGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·2 cites·11 claims
- 1578US9293462B2Integrated circuits with dual silicide contacts and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 22, 2016·3 cites·15 claims
- 1674US9177805B2Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·3 cites·20 claims
- 1769US8722482B2Strained silicon carbide channel for electron mobility of NMOSWAHL JEREMY A·Filed 2010·Granted May 13, 2014·2 cites·10 claims
- 1860US11506338B2Internal casing for pressurized fluid storage tank for a motor vehiclePLASTIC OMNIUM ADVANCED INNOVATION & RES·Filed 2019·Granted Nov 22, 2022·0 cites·19 claims
- 1957US8963255B2Strained silicon carbide channel for electron mobility of NMOSGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 24, 2015·0 cites·17 claims
- 2056US7998846B23-D integrated circuit system and methodSPANSION LLC·Filed 2008·Granted Aug 16, 2011·0 cites·12 claims
- 2151US2018130712A1Spacer defined fin growth and differential fin widthGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 2248US2016049490A1Integrated circuits with dual silicide contacts and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2346US8846511B2Methods of trimming nanowire structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·0 cites·29 claims
- 2445US8969207B2Methods of forming a masking layer for patterning underlying structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 3, 2015·0 cites·28 claims
- 2542US9570344B2Method to protect MOL metallization from hardmask strip processGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 14, 2017·0 cites·17 claims
- 2640US10395981B2Semiconductor device including a leveling dielectric fill materialGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 27, 2019·0 cites·12 claims
- 2740US2011272775A13d integrated circuit system and methodKIM EUNHA·Filed 2011·Application pending·0 cites
- 2831US2016254145A1Methods for fabricating semiconductor structure with condensed silicon germanium layerGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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