Inventor · disambiguated record
Pekka Soininen
Also filed as: SOININEN PEKKA · SOININEN PEKKA J · SOININEN PEKKA JUHA
57 granted patents·25 pending applications·6,697 citations·filing 1997–2023
99Inventor score
Top patents by PatentIndex Score
82 records- 0199US7601223B2Showerhead assembly and ALD methodsASM INT·Filed 2004·Granted Oct 13, 2009·607 cites·33 claims
- 0299US7144809B2Production of elemental films using a boron-containing reducing agentASM INT·Filed 2004·Granted Dec 5, 2006·450 cites·33 claims
- 0399US6821889B2Production of elemental thin films using a boron-containing reducing agentASM INT·Filed 2002·Granted Nov 23, 2004·349 cites·54 claims
- 0499US6482740B2Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOHASM MICROCHEMISTRY OY·Filed 2001·Granted Nov 19, 2002·562 cites·26 claims
- 0599US6482262B1Deposition of transition metal carbidesASM MICROCHEMISTRY OY·Filed 2000·Granted Nov 19, 2002·328 cites·29 claims
- 0699US6475276B1Production of elemental thin films using a boron-containing reducing agentASM MICROCHEMISTRY OY·Filed 2000·Granted Nov 5, 2002·864 cites·40 claims
- 0798US8741062B2Apparatus and methods for deposition reactorsLINDFORS SVEN·Filed 2008·Granted Jun 3, 2014·429 cites·19 claims
- 0898US7955979B2Method of growing electrical conductorsASM INT·Filed 2008·Granted Jun 7, 2011·88 cites·15 claims
- 0998US7241677B2Process for producing integrated circuits including reduction using gaseous organic compoundsASM INT·Filed 2005·Granted Jul 10, 2007·119 cites·32 claims
- 1098US6921712B2Process for producing integrated circuits including reduction using gaseous organic compoundsASM INTERNAT NV·Filed 2001·Granted Jul 26, 2005·153 cites·30 claims
- 1198US6887795B2Method of growing electrical conductorsASM INT·Filed 2002·Granted May 3, 2005·158 cites·32 claims
- 1298US6727169B1Method of making conformal lining layers for damascene metallizationASM INT·Filed 2000·Granted Apr 27, 2004·225 cites·42 claims
- 1398US6599572B2Process for growing metalloid thin films utilizing boron-containing reducing agentsASM MICROCHEMISTRY OY·Filed 2001·Granted Jul 29, 2003·233 cites·10 claims
- 1498US6391785B1Method for bottomless deposition of barrier layers in integrated circuit metallization schemesIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted May 21, 2002·584 cites·32 claims
- 1597US7494927B2Method of growing electrical conductorsASM INT·Filed 2003·Granted Feb 24, 2009·127 cites·45 claims
- 1697US6902763B1Method for depositing nanolaminate thin films on sensitive surfacesASM INT·Filed 2000·Granted Jun 7, 2005·191 cites·21 claims
- 1797US6800552B2Deposition of transition metal carbidesASM INT·Filed 2002·Granted Oct 5, 2004·91 cites·35 claims
- 1897US6664192B2Method for bottomless deposition of barrier layers in integrated circuit metallization schemesIMEC INTER UNI MICRO ELECTR·Filed 2002·Granted Dec 16, 2003·77 cites·32 claims
- 1996US8536058B2Method of growing electrical conductorsKOSTAMO JUHANA·Filed 2011·Granted Sep 17, 2013·80 cites·22 claims
- 2096US7749871B2Method for depositing nanolaminate thin films on sensitive surfacesASM INT·Filed 2005·Granted Jul 6, 2010·34 cites·4 claims
- 2196US7485340B2Production of elemental films using a boron-containing reducing agentASM INT·Filed 2006·Granted Feb 3, 2009·26 cites·23 claims
- 2295US6936535B2Copper interconnect structure having stuffed diffusion barrierASM INTERNAT NV·Filed 2001·Granted Aug 30, 2005·80 cites·19 claims
- 2395US6863727B1Method of depositing transition metal nitride thin filmsASM INT·Filed 2000·Granted Mar 8, 2005·87 cites·32 claims
- 2495US6852635B2Method for bottomless deposition of barrier layers in integrated circuit metallization schemesINTERUNIVERSITAIR NIZROELECMIC·Filed 2003·Granted Feb 8, 2005·137 cites·25 claims
- 2594US6878628B2In situ reduction of copper oxide prior to silicon carbide depositionASM INTERNAT NV·Filed 2001·Granted Apr 12, 2005·159 cites·21 claims
- 2694US6794287B2Process for growing metal or metal carbide thin films utilizing boron-containing reducing agentsASM INTERNAT NV·Filed 2003·Granted Sep 21, 2004·81 cites·15 claims
- 2794US6679951B2Metal anneal with oxidation preventionASM INTENAT N V·Filed 2001·Granted Jan 20, 2004·126 cites·36 claims
- 2893US7537662B2Method and apparatus for depositing thin films on a surfaceASM INT·Filed 2003·Granted May 26, 2009·46 cites·43 claims
- 2992US8753716B2Method of depositing material using a deposition reactorPICOSUN OY·Filed 2013·Granted Jun 17, 2014·4 cites·7 claims
- 3092US8475760B2Device and method for producing nanotubesRAJALA MARKKU·Filed 2008·Granted Jul 2, 2013·27 cites·16 claims
- 3188US7329590B2Method for depositing nanolaminate thin films on sensitive surfacesASM INT·Filed 2004·Granted Feb 12, 2008·35 cites·19 claims
- 3285US9708710B2Atomic layer deposition method for coating a substrate surface using successive surface reactions with multiple precursorsBENEQ OY·Filed 2014·Granted Jul 18, 2017·3 cites·10 claims
- 3378US7102235B2Conformal lining layers for damascene metallizationASM INT·Filed 2003·Granted Sep 5, 2006·17 cites·31 claims
- 3476US7922821B2Source, an arrangement for installing a source, and a method for installing and removing a sourceBENEQ OY·Filed 2006·Granted Apr 12, 2011·2 cites·18 claims
- 3575US10023957B2Apparatus and method for processing substrateBENEQ OY·Filed 2013·Granted Jul 17, 2018·1 cites·14 claims
- 3675US6434130B1Switching control method and apparatus for wireless telecommunicationsNOKIA MOBILE PHONES LTD·Filed 1998·Granted Aug 13, 2002·73 cites·23 claims
- 3774US7670944B2Conformal lining layers for damascene metallizationASM INT·Filed 2006·Granted Mar 2, 2010·3 cites·16 claims
- 3872US11926896B2Atomic layer deposition apparatusBENEQ OY·Filed 2023·Granted Mar 12, 2024·0 cites·12 claims
- 3972US7732331B2Copper interconnect structure having stuffed diffusion barrierASM INT·Filed 2004·Granted Jun 8, 2010·12 cites·44 claims
- 4072US7034397B2Oxygen bridge structures and methods to form oxygen bridge structuresASM INTERNATIONL N V·Filed 2003·Granted Apr 25, 2006·15 cites·17 claims
- 4170US11421319B2Plasma etch-resistant film and a method for its fabricationBENEQ OY·Filed 2020·Granted Aug 23, 2022·0 cites·9 claims
- 4269US12104248B2Gas feeding cup and a gas manifold assemblyBENEQ OY·Filed 2023·Granted Oct 1, 2024·0 cites·19 claims
- 4369USRE48871EMethod and apparatus for depositing thin films on a surfaceASM IP HOLDING BV·Filed 2020·Granted Jan 4, 2022·0 cites·53 claims
- 4468US2013240056A1Apparatus and methods for deposition reactorsLINDFORS SVEN·Filed 2013·Application pending·0 cites
- 4564US10961620B2Plasma etch-resistant film and a method for its fabricationBENEQ OY·Filed 2017·Granted Mar 30, 2021·0 cites·25 claims
- 4664US2018251896A1Apparatus for processing substrateBENEQ OY·Filed 2018·Application pending·0 cites
- 4762US8496753B2Arrangement in connection with ALD reactorJAUHIAINEN MIKA·Filed 2009·Granted Jul 30, 2013·1 cites·15 claims
- 4862US7323422B2Dielectric layers and methods of forming the sameASM INT·Filed 2003·Granted Jan 29, 2008·8 cites·21 claims
- 4961US12180587B2Vacuum chamber and arrangement for atomic layer depositionBENEQ OY·Filed 2023·Granted Dec 31, 2024·0 cites·19 claims
- 5059US12180588B2Loading device, arrangement and method for loading a reaction chamberBENEQ OY·Filed 2023·Granted Dec 31, 2024·0 cites·13 claims
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