Inventor · disambiguated record
Frank Hille
Also filed as: HILLE FRANK
32 granted patents·5 pending applications·112 citations·filing 2004–2025
96Inventor score
Files withINFINEON TECHNOLOGIES AG22INFINEON TECHNOLOGIES AUSTRIA11HILLE FRANK2INFINEON TECHNOLOGIES AUSTRIA AG1MAUDER ANTON1
Top patents by PatentIndex Score
37 records- 0194US7514750B2Semiconductor device and fabrication method suitable thereforINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 7, 2009·22 cites·10 claims
- 0291US8008712B2Metallization and its use in, in particular, an IGBT or a diodeINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 30, 2011·14 cites·37 claims
- 0390US8344415B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 1, 2013·12 cites·15 claims
- 0489US9685504B2Semiconductor to metal transition for semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 20, 2017·6 cites·17 claims
- 0587US9443971B2Semiconductor to metal transitionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Sep 13, 2016·5 cites·20 claims
- 0687US8367532B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2012·Granted Feb 5, 2013·5 cites·23 claims
- 0782US7880200B2Semiconductor device including a free wheeling diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Feb 1, 2011·10 cites·19 claims
- 0880US10978418B2Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layerINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
- 0980US7709887B2Semiconductor component and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 4, 2010·7 cites·21 claims
- 1079US10276656B2Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 30, 2019·2 cites·18 claims
- 1179US8003502B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 23, 2011·4 cites·22 claims
- 1278US10461056B2Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contactINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 29, 2019·2 cites·7 claims
- 1375US7932583B2Reduced free-charge carrier lifetime deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Apr 26, 2011·6 cites·19 claims
- 1475US7557386B2Reverse conducting IGBT with vertical carrier lifetime adjustmentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jul 7, 2009·6 cites·14 claims
- 1572US7768093B2Power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 3, 2010·4 cites·20 claims
- 1671US7541660B2Power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 2, 2009·4 cites·34 claims
- 1768US12033972B2Chip package, method of forming a chip package and method of forming an electrical contactINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 9, 2024·0 cites·12 claims
- 1861US10535743B2Metallization and its use in, in particular, an IGBT or a diodeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 14, 2020·0 cites·22 claims
- 1960US10777506B2Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 15, 2020·0 cites·13 claims
- 2060US9312334B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 12, 2016·0 cites·4 claims
- 2156US8860133B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Oct 14, 2014·0 cites·9 claims
- 2256US2024194778A1Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2355US2013037954A1Metallization and Its Use In, In Particular, an IGBT or a DiodeINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 2454US8252671B2Semiconductor device and fabrication methodMAUDER ANTON·Filed 2011·Granted Aug 28, 2012·0 cites·22 claims
- 2553US11315892B2Power semiconductor device load terminalINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 26, 2022·0 cites·37 claims
- 2653US9543405B2Method of manufacturing a reduced free-charge carrier lifetime semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 10, 2017·0 cites·19 claims
- 2753US2025359143A1Semiconductor device with current propagation region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2853US2024213343A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2952US10475743B2Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·0 cites·25 claims
- 3051US10079217B2Power semiconductor device load terminalINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 18, 2018·0 cites·13 claims
- 3150US8314019B2Metallization and its use in, in particular, an IGBT or a diodeHILLE FRANK·Filed 2011·Granted Nov 20, 2012·0 cites·19 claims
- 3250US2010117117A1Vertical IGBT DeviceINFINEON TECHNOLOGIES AG·Filed 2008·Application pending·0 cites
- 3348US7645690B2Method for producing an integrated circuit having semiconductor zones with a steep doping profileINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 12, 2010·0 cites·25 claims
- 3447US8741750B2Method for fabricating a semiconductor having a graded pn junctionHILLE FRANK·Filed 2009·Granted Jun 3, 2014·0 cites·23 claims
- 3545US9385181B2Semiconductor diode and method of manufacturing a semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 5, 2016·0 cites·12 claims
- 3640US7511353B2Semiconductor diode and production method suitable thereforINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 31, 2009·1 cites·15 claims
- 3738US10636900B2High voltage termination structure of a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 28, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →